Patents by Inventor Katsumi Matsui

Katsumi Matsui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190242008
    Abstract: A method of producing a semiconductor laminate film includes forming a semiconductor layer containing silicon and germanium on a silicon substrate by a sputtering method. In the sputtering method, a film formation temperature of the semiconductor layer is less than 500° C., and a film formation pressure of the semiconductor layer ranges from 1 mTorr to 11 mTorr, or, a film formation temperature of the semiconductor layer is less than 600° C., and a film formation pressure of the semiconductor layer is equal to or more than 2 mTorr and less than 5 mTorr. The sputtering method uses a sputtering gas having a volume ratio of a hydrogen gas of less than 0.1%, and the semiconductor layer satisfies a relationship of t?0.881×x?4.79, where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer.
    Type: Application
    Filed: July 12, 2017
    Publication date: August 8, 2019
    Inventors: Yoshiyuki SUDA, Takahiro TSUKAMOTO, Akira MOTOHASHI, Kyohei DEGURA, Katsumi OKUBO, Takuma YAGI, Akifumi KASAMATSU, Nobumitsu HIROSE, Toshiaki MATSUI
  • Patent number: 9650247
    Abstract: A method for efficiently producing a high-purity metal hydride without contamination of other metals while initiating reaction rapidly is provided. A method for producing a metal hydride from a metal selected from the group consisting of Group 2 metals and Group 3 metals comprising: (A) charging the pressure resistant container with the metal, introducing hydrogen into the container, and heating the container to initiate reaction, wherein a gauge pressure (a) is set to 0.1 to 1.5 MPa, a heating temperature (b) is set to 50 to 250° C., and a product of the gauge pressure and the heating temperature, a×b, is set in the range of 20 to 100; (B) stopping the introduction of hydrogen to allow the reaction to proceed when the temperature in the reaction container is increased to a temperature higher by 10 to 100° C. than the heating temperature; (C) introducing hydrogen of 0.1 to 1.
    Type: Grant
    Filed: September 25, 2014
    Date of Patent: May 16, 2017
    Assignee: TAIHEIYO CEMENT CORPORATION
    Inventors: Tetsuya Ishimoto, Shoji Suzuki, Katsumi Matsui, Tomoki Hatsumori, Kazuhiko Tokoyoda
  • Publication number: 20160244328
    Abstract: A method for efficiently producing a high-purity metal hydride without contamination of other metals while initiating reaction rapidly is provided. A method for producing a metal hydride from a metal selected from the group consisting of Group 2 metals and Group 3 metals comprising: (A) charging the pressure resistant container with the metal, introducing hydrogen into the container, and heating the container to initiate reaction, wherein a gauge pressure (a) is set to 0.1 to 1.5 MPa, a heating temperature (b) is set to 50 to 250° C., and a product of the gauge pressure and the heating temperature, a×b, is set in the range of 20 to 100; (B) stopping the introduction of hydrogen to allow the reaction to proceed when the temperature in the reaction container is increased to a temperature higher by 10 to 100° C. than the heating temperature; (C) introducing hydrogen of 0.1 to 1.
    Type: Application
    Filed: September 25, 2014
    Publication date: August 25, 2016
    Applicant: TAIHEIYO CEMENT CORPORATION
    Inventors: Tetsuya ISHIMOTO, Shoji SUZUKI, Katsumi MATSUI, Tomoki HATSUMORI, Kazuhiko TOKOYODA
  • Patent number: 6056013
    Abstract: A shell is constructed by an outer shell and an end plate. The end plate has a port into a liquid champer and a gas champer. A bladder divides an internal space of the shell into a liquid champer and a gas champer. A gas is introduced into the gas chamber without the provision of a gas inlet hole in the outer shell located on the side of the gas champer. For example, an accumulator is assembled by combining the outer shell, the end plate and bladder under atmosphere of a high pressure gas.
    Type: Grant
    Filed: April 17, 1998
    Date of Patent: May 2, 2000
    Assignee: NOK Corporation
    Inventors: Kenji Sasaki, Katsumi Matsui
  • Patent number: 5924196
    Abstract: A shell is constituted by an outer shell and an end plate. The end plate has a port in communication with a liquid chamber. A bladder divides an internal space of the shell into a liquid chamber and a gas chamber. A gas is introduced into the gas chamber without the provision of a gas inlet hole in the outer shell located on the side of the gas chamber. For example, an accumulator is assembled by combining the outer shell, the end plate and bladder under atmosphere of a high pressure gas.
    Type: Grant
    Filed: April 17, 1998
    Date of Patent: July 20, 1999
    Assignee: Nok Corporation
    Inventors: Kenji Sasaki, Katsumi Matsui
  • Patent number: 5918355
    Abstract: A shell is constituted by an outer shell and an end plate. The end plate has a port in communication with a liquid chamber. A bladder divides an internal space of the shell into a liquid chamber and a gas chamber. A gas is introduced into the gas chamber without the provision of a gas inlet hole in the outer shell located on the side of the gas chamber. For example, an accumulator is assembled by combining the outer shell, the end plate and bladder under atmosphere of a high pressure gas.
    Type: Grant
    Filed: April 17, 1998
    Date of Patent: July 6, 1999
    Assignee: Nok Corporation
    Inventors: Kenji Sasaki, Katsumi Matsui
  • Patent number: 5771936
    Abstract: A shell constituted by an outer shell and an end plate. The end plate has a port in communication with a liquid chamber. A bladder divides an internal space of the shell into a liquid chamber and a gas chamber. A gas is introduced into the gas chamber without the provision of a gas inlet in the outer shell located on the side of the gas chamber. For example, an accumulator is assembled by combining the outer shell, the end plate and bladder under atmosphere of a high pressure gas.
    Type: Grant
    Filed: July 25, 1995
    Date of Patent: June 30, 1998
    Assignee: Nok Corporation
    Inventors: Kenji Sasaki, Katsumi Matsui