Abstract: A semiconductor device includes: a thick copper member in which a semiconductor chip is mounted; a printed circuit board that is disposed on a front surface of the thick copper member and provided with an opening exposing a part of the front surface of the thick copper member, a wiring pattern, and conductive vias connecting the pattern and the thick copper member; a semiconductor chip mounted on the front surface of the thick copper member exposed through the opening and connected to the pattern by a metal wire; an electronic component mounted on a front surface of the printed circuit board opposite to a side facing the thick copper member and connected to the pattern; and a cap or an epoxy resin sealing the front surface of the printed circuit board opposite to a side facing the thick copper member, the chip, the component, and the metal wire.

Abstract: A semiconductor package includes: an insulating substrate; a first semiconductor chip; a second semiconductor chip with a thickness smaller than a thickness of the first semiconductor chip; a heat radiation member in which a main surface located on an opposite side of an active surface of the first semiconductor chip and an active surface of the second semiconductor chip, respectively, are bonded to a lower surface; and a sealing resin having contact with at least part of a side wall of the heat radiation member without being raised over an upper surface of the heat radiation member to seal the first and second semiconductor chips on the insulating substrate, wherein in the heat radiation member, a thickness of a first bonding part to which the first semiconductor chip is bonded is smaller than a thickness of a second bonding part to which the second semiconductor chip is bonded.

Abstract: A semiconductor device comprises; a lead frame having leads and a die pad; a printed circuit board including an electrode for the connection of each of the leads and the die pad, a wiring pattern, and an opening exposing a part of a surface of the die pad; the semiconductor element for processing a high frequency signal, mounted on a surface of a metal block bonded to the surface of the die pad exposed through the opening, and connected to the wiring pattern with a metal wire; electronic components connected to the wiring pattern and mounted on a surface of the printed circuit board; and a sealing resin to seal the printed circuit board, the semiconductor element, the electronic components, and the metal wire so as to expose rear surfaces of the leads and the die pad.

Abstract: A transistor (2) and a matching circuit substrate (3-6) are provided on a base plate (1) and connected to each other. A frame (15) is provided on the base plate (1) and surrounds the transistor (2) and the matching circuit substrate (3-6). The frame (15) has a smaller linear expansion coefficient than that of the base plate (1). A screwing portion (17) is provided in the frame (15). A size of the base plate (1) is smaller than that of the frame (15).

Abstract: A semiconductor device includes a heat sink, a semiconductor chip and a circuit board that are fixed to the heat sink with a fixing material, plural leads connected to the semiconductor chip and the circuit board via wires, and mold resin provided on the heat sink. The mold resin covers parts of the leads, the wires, and the semiconductor chip, and exposes remainders of the leads. The surfaces of the leads and the heat sink are provided with roughened plating having a surface roughness RMS=150 nm or more. The fixing material is solder or sintered silver. The water absorption rate of the mold resin is 0.24% or less.

Abstract: A semiconductor device includes a heat sink, a semiconductor chip and a circuit board that are fixed to the heat sink with a fixing material, plural leads connected to the semiconductor chip and the circuit board via wires, and mold resin provided on the heat sink. The mold resin covers parts of the leads, the wires, and the semiconductor chip, and exposes remainders of the leads. The surfaces of the leads and the heat sink are provided with roughened plating having a surface roughness RMS=150 nm or more. The fixing material is solder or sintered silver. The water absorption rate of the mold resin is 0.24% or less.

Abstract: A microwave device includes: a multilayer resin substrate being a first multilayer resin substrate; an IC being a radio frequency circuit provided on the multilayer resin substrate and electrically connected to the multilayer resin substrate; a heat spreader provided on a side opposite to the multilayer resin substrate across the IC, and in contact with the IC; a mold resin covering the periphery of the IC and the heat spreader; and a conductive film covering the mold resin and the heat spreader, where an inner side of the conductive film is in contact with the heat spreader, and the conductive film is electrically connected to a ground via hole of the multilayer resin substrate.

Abstract: A microwave device includes: a multilayer resin substrate being a first multilayer resin substrate; an IC being a radio frequency circuit provided on the multilayer resin substrate and electrically connected to the multilayer resin substrate; a heat spreader provided on a side opposite to the multilayer resin substrate across the IC, and in contact with the IC; a mold resin covering the periphery of the IC and the heat spreader; and a conductive film covering the mold resin and the heat spreader, where an inner side of the conductive film is in contact with the heat spreader, and the conductive film is electrically connected to a ground via hole of the multilayer resin substrate.

Abstract: A semiconductor device includes a heat sink, an integrated component in which a ceramic terminal having a microstrip line and a matching circuit are integrated into one unit, a lead fixed to the ceramic terminal, a matching substrate fixed to the heat sink, a semiconductor chip fixed to the heat sink, a plurality of wires configured to connect the matching circuit and the matching substrate and to connect electrically the matching substrate and the semiconductor chip, a frame configured to surround the matching substrate and the semiconductor chip in a plan view, and a cap provided on the frame.

Abstract: A semiconductor device includes: a thick copper member in which a semiconductor chip is mounted; a printed circuit board that is disposed on a front surface of the thick copper member and provided with an opening exposing a part of the front surface of the thick copper member, a wiring pattern, and conductive vias connecting the pattern and the thick copper member; a semiconductor chip mounted on the front surface of the thick copper member exposed through the opening and connected to the pattern by a metal wire; an electronic component mounted on a front surface of the printed circuit board opposite to a side facing the thick copper member and connected to the pattern; and a cap or an epoxy resin sealing the front surface of the printed circuit board opposite to a side facing the thick copper member, the chip, the component, and the metal wire.

Abstract: A microwave device includes: a first multilayer resin substrate including a ground via hole; a semiconductor substrate provided at the first multilayer resin substrate and including a high frequency circuit; and a conductive heat spreader provided at an opposite face of the semiconductor substrate from a face of the semiconductor substrate facing the first multilayer resin substrate. The microwave device includes: a resin provided over the first multilayer resin substrate and covering the semiconductor substrate and the heat spreader such that an opposite face of the heat spreader from a face of the heat spreader facing the semiconductor substrate is exposed as an exposed face; and a conductive film covering the resin and the heat spreader and touching the exposed face. The semiconductor substrate includes a ground through hole extending through the semiconductor substrate. The conductive film is electrically connected to the ground via hole via the heat spreader and the ground through hole.

Abstract: A transistor (2) and a matching circuit substrate (3-6) are provided on a base plate (1) and connected to each other. A frame (15) is provided on the base plate (1) and surrounds the transistor (2) and the matching circuit substrate (3-6). The frame (15) has a smaller linear expansion coefficient than that of the base plate (1). A screwing portion (17) is provided in the frame (15). A size of the base plate (1) is smaller than that of the frame (15).

Abstract: A semiconductor device includes a heat sink, a semiconductor chip and a circuit board that are fixed to the heat sink with a fixing material, plural leads connected to the semiconductor chip and the circuit board via wires, and mold resin provided on the heat sink. The mold resin covers parts of the leads, the wires, and the semiconductor chip, and exposes remainders of the leads. The surfaces of the leads and the heat sink are provided with roughened plating having a surface roughness RMS=150 nm or more. The fixing material is solder or sintered silver. The water absorption rate of the mold resin is 0.24% or less.

Abstract: A microwave device includes: a multilayer resin substrate being a first multilayer resin substrate; an IC being a radio frequency circuit provided on the multilayer resin substrate and electrically connected to the multilayer resin substrate; a heat spreader provided on a side opposite to the multilayer resin substrate across the IC, and in contact with the IC; a mold resin covering the periphery of the IC and the heat spreader; and a conductive film covering the mold resin and the heat spreader, where an inner side of the conductive film is in contact with the heat spreader, and the conductive film is electrically connected to a ground via hole of the multilayer resin substrate.

Abstract: A semiconductor device comprises; a lead frame having leads and a die pad; a printed circuit board including an electrode for the connection of each of the leads and the die pad, a wiring pattern, and an opening exposing a part of a surface of the die pad; the semiconductor element for processing a high frequency signal, mounted on a surface of a metal block bonded to the surface of the die pad exposed through the opening, and connected to the wiring pattern with a metal wire; electronic components connected to the wiring pattern and mounted on a surface of the printed circuit board; and a sealing resin to seal the printed circuit board, the semiconductor element, the electronic components, and the metal wire so as to expose rear surfaces of the leads and the die pad.

Abstract: A semiconductor chip (2,3) is mounted on a heat sink (1). Plural lead terminals (5,6) are connected to the semiconductor chip (2,3). The plural lead terminals (5,6) include a first lead terminal through which a high frequency signal passes. Plural dielectric materials (10,11) separated from each other are individually provided between the plural lead terminals (5,6) and the heat sink (1). Sealing resin (12) seals the semiconductor chip (2,3), the plural lead terminals (5,6) and the plural dielectric materials (10,11).

Abstract: A semiconductor device includes a substrate, a semiconductor element, a ground pad, an insulating coating member, a conductive bonding member, and a conductive cap. The inner peripheral end of a bottom of the conductive cap is disposed at a side close to the inner periphery of the insulating coating member relative to the outer peripheral end of the insulating coating member. The bottom has a shape in which the distance between the main surface and itself decreases continuously from its outer peripheral end toward its inner peripheral end.

Abstract: A semiconductor device according to the present invention includes: a substrate; a heat generating portion provided on the substrate; a cap substrate provided above the substrate so that a hollow portion is provided between the substrate and the cap substrate; and a reflection film provided above the heat generating portion and reflecting a medium wavelength infrared ray. The reflection film reflects the infrared ray radiated to the cap substrate side through the hollow portion due to the temperature increase of the heat generating portion, so that the temperature increase of the cap substrate side can be suppressed. Because of this function, even if mold resin is provided on the cap substrate, increase of the temperature of the mold resin can be suppressed.

Abstract: A semiconductor package includes: an insulating substrate; a first semiconductor chip; a second semiconductor chip with a thickness smaller than a thickness of the first semiconductor chip; a heat radiation member in which a main surface located on an opposite side of an active surface of the first semiconductor chip and an active surface of the second semiconductor chip, respectively, are bonded to a lower surface; and a sealing resin having contact with at least part of a side wall of the heat radiation member without being raised over an upper surface of the heat radiation member to seal the first and second semiconductor chips on the insulating substrate, wherein in the heat radiation member, a thickness of a first bonding part to which the first semiconductor chip is bonded is smaller than a thickness of a second bonding part to which the second semiconductor chip is bonded.

Abstract: A semiconductor device includes a heat sink, an integrated component in which a ceramic terminal having a microstrip line and a matching circuit are integrated into one unit, a lead fixed to the ceramic terminal, a matching substrate fixed to the heat sink, a semiconductor chip fixed to the heat sink, a plurality of wires configured to connect the matching circuit and the matching substrate and to connect electrically the matching substrate and the semiconductor chip, a frame configured to surround the matching substrate and the semiconductor chip in a plan view, and a cap provided on the frame.