Abstract: The present invention addresses the problem of forming, using a sublimation ink, an image that is free of outline blurring on a transfer medium even when the thickness of an ink fixation layer is increased. In order to solve this problem, a transfer film 10 is provided with a base material film 11, a transfer binder layer 12, a sublimation ink layer 13, and a mask layer 14 which is provided in a region where sublimation ink is not transferred to media 100, the transfer binder layer 12 being configured from a material which is permeated by sublimation of the sublimation ink.

Abstract: The present invention addresses the problem of forming, using a sublimation ink, an image that is free of outline blurring on a transfer medium even when the thickness of an ink fixation layer is increased. In order to solve this problem, a transfer film 10 is provided with a base material film 11, a transfer binder layer 12, a sublimation ink layer 13, and a mask layer 14 which is provided in a region where sublimation ink is not transferred to media 100, the transfer binder layer 12 being configured from a material which is permeated by sublimation of the sublimation ink.

Abstract: An organic EL display device includes scanning lines, video signal lines, and pixels, each including a TFT having a semiconductor layer and an organic EL layer located between a lower electrode and an upper electrode. A source electrode connecting the semiconductor layer and the lower electrode is formed of three layers including a barrier metal, an Al-containing metal, and a cap metal. The barrier metal is formed of a first layer in contact with the semiconductor layer and a second layer in contact with the Al-containing metal. Each of the first layer, the second layer, and the cap metal is formed of a metal comprising a high melting point metal, and an amount of oxygen in the first layer is larger than an amount of oxygen in the second layer.

Abstract: An organic EL display device includes scanning lines, video signal lines, and pixels, each including a TFT having a semiconductor layer and an organic EL layer located between a lower electrode and an upper electrode. A source electrode connecting the semiconductor layer and the lower electrode is formed of three layers including a barrier metal, an Al-containing metal, and a cap metal. The barrier metal is formed of a first layer in contact with the semiconductor layer and a second layer in contact with the Al-containing metal. Each of the first layer, the second layer, and the cap metal is formed of a metal comprising a high melting point metal, and an amount of oxygen in the first layer is larger than an amount of oxygen in the second layer.

Abstract: A contact resistance in a through-hole with a source or a drain electrode connected to a TFT is decreased, thereby improving the operation efficiency of a display device. In the through-hole, a source portion of the TFT is connected to a source electrode 8. The source electrode 8 is formed of three layers comprising a barrier metal, an Al alloy 82, and a cap metal 83. The barrier metal is divided into a lower layer 81a in contact with the semiconductor layer and an upper layer 81b in contact with the Al alloy. The lower layer 81a of the barrier metal is formed by sputtering, the lower layer 81a is heat-treated and, subsequently, an upper layer 81b of the base metal, the Al alloy 82, and the cap metal 83 are formed continuously by sputtering. Since the upper layer 81b of the barrier metal in contact with the Al alloy 82 is not oxidized, increase in the contact resistance in the through-hole can be prevented.

Abstract: A contact resistance in a through-hole with a source or a drain electrode connected to a TFT is decreased, thereby improving the operation efficiency of a display device. In the through-hole, a source portion of the TFT is connected to a source electrode 8. The source electrode 8 is formed of three layers comprising a barrier metal, an Al alloy 82, and a cap metal 83. The barrier metal is divided into a lower layer 81a in contact with the semiconductor layer and an upper layer 81b in contact with the Al alloy. The lower layer 81a of the barrier metal is formed by sputtering, the lower layer 81a is heat-treated and, subsequently, an upper layer 81b of the base metal, the Al alloy 82, and the cap metal 83 are formed continuously by sputtering. Since the upper layer 81b of the barrier metal in contact with the Al alloy 82 is not oxidized, increase in the contact resistance in the through-hole can be prevented.

Abstract: In a method of fabricating separator walls in a shape of stripes in a plan view to divide a discharge space of a plasma display panel, dried films of a predetermined height, each film being formed of a material formed of solid particles bonded with a binding agent in a shape of stripe that peters out in a plan view along longitudinal direction at the longitudinal end of the stripe is formed on a substrate; and the dried films are heated so as to burn out the binding agent as well as to melt the solid particles to stick firmly to each other.