Abstract: A method for making a semiconductor device includes forming a resist pattern having a multi-layered structure by performing a plurality of development steps, the resist pattern including a first opening corresponding to a fine gate section of a gate electrode and a second opening placed on the first opening, the second opening corresponding to an over-gate section which is wider than the fine gate section and having a cross section protruding over an undercut in an underlying layer, wherein every angle of the second opening at the tip of the over-gate section is more than 90 degrees; and forming the gate electrode provided with the fine gate section and the over-gate section by depositing electrode materials on the resist pattern.

Abstract: A method for making a semiconductor device includes forming a resist pattern having a multi-layered structure by performing a plurality of development steps, the resist pattern including a first opening corresponding to a fine gate section of a gate electrode and a second opening placed on the first opening, the second opening corresponding to an over-gate section which is wider than the fine gate section and having a cross section protruding like an overhang, wherein every angle of the second opening at the tip of the over-gate section is more than 90 degrees; and forming the gate electrode provided with the fine gate section and the over-gate section by depositing electrode materials on the resist pattern.

Abstract: A method for making a semiconductor device includes forming a resist pattern having a multi-layered structure by performing a plurality of development steps, the resist pattern including a first opening corresponding to a fine gate section of a gate electrode and a second opening placed on the first opening, the second opening corresponding to an over-gate section which is wider than the fine gate section and having a cross section protruding like an overhang, wherein every angle of the second opening at the tip of the over-gate section is more than 90 degrees; and forming the gate electrode provided with the fine gate section and the over-gate section by depositing electrode materials on the resist pattern.

Abstract: A method for making a semiconductor device includes forming a resist pattern having a multi-layered structure by performing a plurality of development steps, the resist pattern including a first opening corresponding to a fine gate section of a gate electrode and a second opening placed on the first opening, the second opening corresponding to an over-gate section which is wider than the fine gate section and having a cross section protruding like an overhang, wherein every angle of the second opening at the tip of the over-gate section is more than 90 degrees; and forming the gate electrode provided with the fine gate section and the over-gate section by depositing electrode materials on the resist pattern.

Abstract: A method of manufacturing a semiconductor device includes an exposing step of transferring a support pattern onto an non-exposed area of a resist layer so that an opening for forming a support is formed in a thick part of the resist layer. The support is formed simultaneously with a gate electrode in a body using the resist layer having the opening. The gate electrode on a mesa extending into the outside of the mesa is supported by both a mesa layer and the support.