Patents by Inventor Katsumi Setoguchi
Katsumi Setoguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11791130Abstract: The objective of the present invention is to reduce differences between individual electron beam observation devices accurately by means of image correction.Type: GrantFiled: January 23, 2019Date of Patent: October 17, 2023Assignee: Hitachi High-Tech CorporationInventors: Koichi Hamada, Megumi Kimura, Momoyo Enyama, Ryou Yumiba, Makoto Sakakibara, Kei Sakai, Satoru Yamaguchi, Katsumi Setoguchi, Masumi Shirai, Yasunori Takasugi
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Publication number: 20220051868Abstract: The objective of the present invention is to reduce differences between individual electron beam observation devices accurately by means of image correction.Type: ApplicationFiled: January 23, 2019Publication date: February 17, 2022Inventors: Koichi HAMADA, Megumi KIMURA, Momoyo ENYAMA, Ryou YUMIBA, Makoto SAKAKIBARA, Kei SAKAI, Satoru YAMAGUCHI, Katsumi SETOGUCHI, Masumi SHIRAI, Yasunori TAKASUGI
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Patent number: 11170969Abstract: Provided is an electron beam observation device that includes: an electron source; an objective lens concentrating an electron beam emitted from the electron source; and a control unit configured to perform control such that a plurality of images is generated by capturing images of a reference sample having a specific pattern, and a frequency characteristic is calculated for each of the plurality of images, in which an image is generated based on a secondary signal generated from a sample due to irradiation of the sample with the electron beam, and the control unit holds the plurality of frequency characteristics.Type: GrantFiled: March 30, 2018Date of Patent: November 9, 2021Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Koichi Hamada, Megumi Kimura, Momoyo Enyama, Ryou Yumiba, Makoto Sakakibara, Kei Sakai, Satoru Yamaguchi, Katsumi Setoguchi
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Publication number: 20210125806Abstract: Provided is an electron beam observation device that includes: an electron source; an objective lens concentrating an electron beam emitted from the electron source; and a control unit configured to perform control such that a plurality of images is generated by capturing images of a reference sample having a specific pattern, and a frequency characteristic is calculated for each of the plurality of images, in which an image is generated based on a secondary signal generated from a sample due to irradiation of the sample with the electron beam, and the control unit holds the plurality of frequency characteristics.Type: ApplicationFiled: March 30, 2018Publication date: April 29, 2021Inventors: Koichi HAMADA, Megumi KIMURA, Momoyo ENYAMA, Ryou YUMIBA, Makoto SAKAKIBARA, Kei SAKAI, Satoru YAMAGUCHI, Katsumi SETOGUCHI
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Patent number: 9702695Abstract: An object of the present invention is to provide an image processing apparatus that quickly and precisely measures or evaluates a distortion in a field of view and a charged particle beam apparatus. To attain the object, an image processing apparatus or the like is proposed which acquires a first image of a first area of an imaging target and a second image of a second area that is located at a different position than the first area and partially overlaps with the first area and determines the distance between a measurement point in the second image and a second part of the second image that corresponds to a particular area for a plurality of sites in the overlapping area of the first image and the second image.Type: GrantFiled: May 25, 2011Date of Patent: July 11, 2017Assignee: Hitachi High-Technologies CorporationInventors: Hiroki Kawada, Osamu Inoue, Miyako Matsui, Takahiro Kawasaki, Naoshi Itabashi, Takashi Takahama, Katsumi Setoguchi, Osamu Komuro
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Patent number: 9275829Abstract: In an image forming apparatus and a computer program, extraction of information about distortion in a charged particle beam scan area can be implemented. An image forming apparatus integrates image data obtained by a charged particle beam apparatus and calculates, from a plurality of images with different scan directions of the charged particle beam apparatus, first information about the amount of change in a feature quantity in accordance with the time of irradiation of the charged particle beam, second information about the amount of change in the feature quantity before and after a change in beam scan direction, and/or third information about a position error of a pattern on the image before and after the change in beam scan direction.Type: GrantFiled: August 31, 2011Date of Patent: March 1, 2016Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Katsumi Setoguchi, Osamu Komuro
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Publication number: 20130146763Abstract: An object of the present invention is to provide an image processing apparatus that quickly and precisely measures or evaluates a distortion in a field of view and a charged particle beam apparatus. To attain the object, an image processing apparatus or the like is proposed which acquires a first image of a first area of an imaging target and a second image of a second area that is located at a different position than the first area and partially overlaps with the first area and determines the distance between a measurement point in the second image and a second part of the second image that corresponds to a particular area for a plurality of sites in the overlapping area of the first image and the second image.Type: ApplicationFiled: May 25, 2011Publication date: June 13, 2013Applicant: Hitachi High-Technologies CorporationInventors: Hiroki Kawada, Osamu Inoue, Miyako Matsui, Takahiro Kawasaki, Naoshi Itabashi, Takashi Takahama, Katsumi Setoguchi, Osamu Komuro
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Publication number: 20130141563Abstract: The purpose of the present invention is to provide an image forming apparatus and a computer program such that extraction of information about distortion in a charged particle beam scan area can be implemented. An embodiment for achieving the purpose proposes: an image forming apparatus that integrates image data obtained by a charged particle beam apparatus and that calculates, from a plurality of images with different scan directions of the charged particle beam apparatus, first information about the amount of change in a feature quantity in accordance with the time of irradiation of the charged particle beam, second information about the amount of change in the feature quantity before and after a change in beam scan direction, and/or third information about a position error of a pattern on the image before and after the change in beam scan direction; and a computer program for causing a computing apparatus to perform the above process.Type: ApplicationFiled: August 31, 2011Publication date: June 6, 2013Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Katsumi Setoguchi, Osamu Komuro
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Publication number: 20120138796Abstract: Provided is a signal processing method for a charged particle beam, and a signal processing device, wherein the amount of beam radiation per unit area is restricted, while maintaining the magnifications in the X and Y directions constant. Proposed, in order to achieve the above-mentioned purpose, is a signal processing method and a signal processing device wherein a plurality of images taken at different places are added up, and an image is formed. Proposed as a specific example is a signal processing method and a signal processing device that obtains a repeating pattern formed on a sample and having the same shape or similar shapes, by moving the field of view, and that forms an image (or a signal waveform) by adding up the obtained signal, and conducts measurements using this image.Type: ApplicationFiled: August 23, 2010Publication date: June 7, 2012Applicant: Hitachi High-Technologies CorporationInventors: Fumihiro Sasajima, Katsumi Setoguchi
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Patent number: 7611993Abstract: A plasma processing method for processing a sample by applying a high-frequency bias power periodically for each one period (T) which is divided along a time axis into a first sub-period (T1) for which feedback control of a CD gain is executed, a second sub-period (T2) for which feedback control of a select ratio is executed, and a third sub-period (T3) for which feedback control of both the CD gain and the select ratio are executed. The applied power is set at a large value in the first sub-period, and a duty ratio T1/T is controlled in accordance with the CD gain. A plurality of samples are processed with preset process conditions, and feedback control for each processing unit of the samples is executed in accordance with a processing state of each of the samples so that an average applied power over the one period (T) is constant.Type: GrantFiled: April 5, 2007Date of Patent: November 3, 2009Assignee: Hitachi High-Technologies CorporationInventors: Tetsuo Ono, Katsumi Setoguchi, Hideyuki Yamamoto
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Patent number: 7381951Abstract: A charged particle beam adjustment apparatus for tilting an electron beam by a tilt deflector is disclosed. The tilt angle adjustment of the electron beam and the distortion adjustment for correcting the image distortion generated when the electron beam is tilted are conducted on a specified. sample such as a pyramidal sample. The images before and after the tilting are acquired and processed to determine the tilt angle value and the distortion amount. The tilt angle adjustment and the adjustment for correction of the distortion are automated in accordance with a predetermined processing flow.Type: GrantFiled: August 24, 2005Date of Patent: June 3, 2008Assignee: Hitachi High-Technologies CorporationInventors: Takashi Doi, Noriaki Arai, Hidetoshi Morokuma, Katsumi Setoguchi, Fumihiro Sasajima, Maki Tanaka, Atsushi Miyamoto
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Publication number: 20070184562Abstract: A plasma processing method for processing a sample by applying a high-frequency bias power periodically for each one period (T) which is divided along a time axis into a first sub-period (T1) for which feedback control of a CD gain is executed, a second sub-period (T2) for which feedback control of a select ratio is executed, and a third sub-period (T3) for which feedback control of both the CD gain and the select ratio are executed. The applied power is set at a large value in the first sub-period, and a duty ratio T1/T is controlled in accordance with the CD gain. A plurality of samples are processed with preset process conditions, and feedback control for each processing unit of the samples is executed in accordance with a processing state of each of the samples so that an average applied power over the one period (T) is constant.Type: ApplicationFiled: April 5, 2007Publication date: August 9, 2007Inventors: Tetsuo ONO, Katsumi Setoguchi, Hideyuki Yamamoto
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Publication number: 20060043293Abstract: A charged particle beam adjustment apparatus for tilting an electron beam by a tilt deflector is disclosed. The tilt angle adjustment of the electron beam and the distortion adjustment for correcting the image distortion generated when the electron beam is tilted are conducted on a specified sample such as a pyramidal sample. The images before and after the tilting are acquired and processed to determine the tilt angle value and the distortion amount. The tilt angle adjustment and the adjustment for correction of the distortion are automated in accordance with a predetermined processing flow.Type: ApplicationFiled: August 24, 2005Publication date: March 2, 2006Inventors: Takashi Doi, Noriaki Arai, Hidetoshi Morokuma, Katsumi Setoguchi, Fumihiro Sasajima, Maki Tanaka, Atsushi Miyamoto
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Publication number: 20050183822Abstract: A plasma processing apparatus for processing a substrate placed on a sample base installed in a vacuum processing chamber, in which plasma is generated and a high-frequency voltage is applied to the sample base. The apparatus includes a high-frequency power supply connected to the sample base, a modulation unit for periodically carrying out on-off modulation on the high-frequency voltage generated by the high-frequency power supply, and a control unit for changing a duty ratio of the on-off modulation for each processed substrate or each plurality of processed substrates.Type: ApplicationFiled: April 22, 2005Publication date: August 25, 2005Inventors: Tetsuo Ono, Katsumi Setoguchi, Hideyuki Yamamoto
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Patent number: 6888094Abstract: A plasma processing method of processing a substrate by controlling the application of a bias to the substrate independently of generation of plasma. The method includes modulating periodically an output value of a high-frequency voltage applied to a substrate base and changing a duty ratio of the periodic modulation for one of each processed substrate and for each of a plurality of processed substrates. The duty ratio is defined as a ratio of a sub-period of a period of the period modulation, during which a large voltage of the output value of the high-frequency voltage is applied, to the period of the periodic modulation.Type: GrantFiled: February 20, 2004Date of Patent: May 3, 2005Assignee: Hitachi High-Technologies CorporationInventors: Tetsuo Ono, Katsumi Setoguchi, Hideyuki Yamamoto
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Publication number: 20040159639Abstract: A plasma processing method of processing a substrate by controlling the application of a bias to the substrate independently of generation of plasma. The method includes modulating periodically an output value of a high-frequency voltage applied to a substrate base and changing a duty ratio of the periodic modulation for one of each processed substrate and for each of a plurality of processed substrates. The duty ratio is defined as a ratio of a sub-period of a period of the period modulation, during which a large voltage of the output value of the high-frequency voltage is applied, to the period of the periodic modulation.Type: ApplicationFiled: February 20, 2004Publication date: August 19, 2004Inventors: Tetsuo Ono, Katsumi Setoguchi, Hideyuki Yamamoto
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Patent number: 6700090Abstract: Plasma is generated in a vacuum processing apparatus and a high-frequency voltage is applied to a lower electrode on which a wafer is placed. The high-frequency voltage applied to the lower electrode is subjected to periodical on-off modulation, the on-off duty ratio of which is determined for each wafer or each plurality of wafers, to carry out plasma processing on the wafer. As a result, in the plasma processing carried out on the wafer, the wafer is fabricated with a high degree of reproducibility by suppressing variations in fabricated-line dimension from wafer to wafer without decreasing the throughput.Type: GrantFiled: August 28, 2002Date of Patent: March 2, 2004Assignee: Hitachi High-Technologies CorporationInventors: Tetsuo Ono, Katsumi Setoguchi, Hideyuki Yamamoto