Abstract: In a light emitting element, a semiconductor layer including a light emitting layer is stacked on a GaN substrate 11, and a surface of the GaN substrate 11 opposite to the stacked semiconductor layer serves as a main light emission surface S. At the main light emission surface S, quadrangular pyramid shaped protrusions 11a which are continuously arranged and whose standing direction F2 is displaced from a stacking direction of the semiconductor layer are formed. In each protrusion 11a, fine asperities are, by etching, preferably formed at least at an inclined surface having a small inclination angle. Moreover, each protrusion 11a may be in a truncated shape, but is preferably formed in a pointed shape.

Abstract: A semiconductor laser device includes a semiconductor multilayer structure 12 having a stripe-shaped ridge waveguide portion 12a extending in a direction intersecting a cavity end face. A dielectric layer 16 is formed on the semiconductor multilayer structure 12 to cover at least part of both side faces of the ridge waveguide portion 12a. Light absorption layers 17 are formed on both sides of the ridge waveguide portion 12a on the semiconductor multilayer structure 12 so as to be spaced from the ridge waveguide portion 12a and the cavity end face.

Abstract: A semiconductor light source includes a light-emitting device 101 having a plurality of semiconductor layers made of nitride semiconductors, and a drive circuit 102 for driving the light-emitting device 101. The drive circuit 102 performs forward drive operation, in which a forward current is supplied to the light-emitting device to make the light-emitting device 101 emit light, and reverse drive operation, in which a reverse bias is applied to the light-emitting device. The magnitude of the reverse bias is limited by the value of a reverse current flowing through the light-emitting device.

Abstract: A group III nitride semiconductor light emitting device according to the present invention includes an intermediate layer formed of AlxGa1-x-yInyN(0<X<1, 0<y<1, x+y<1) between an active layer and a cladding layer and an electron blocking layer formed of p-type group III nitride semiconductor having a smaller electron affinity than that of the intermediate layer so as to be in contact with the intermediate layer. The semiconductor light emitting layer may be a laser diode or a LED.

Abstract: A semiconductor light source includes a light-emitting device 101 having a plurality of semiconductor layers made of nitride semiconductors, and a drive circuit 102 for driving the light-emitting device 101. The drive circuit 102 performs forward drive operation, in which a forward current is supplied to the light-emitting device to make the light-emitting device 101 emit light, and reverse drive operation, in which a reverse bias is applied to the light-emitting device. The magnitude of the reverse bias is limited by the value of a reverse current flowing through the light-emitting device.

Abstract: A group III nitride semiconductor light emitting device according to the present invention includes an immediate layer formed of AlxGa1-x-yInyN (0<x<1, 0<y<1, x+y<1) between an active layer and a cladding layer and an electron blocking layer formed of p-type group III nitride semiconductor having a smaller electron affinity than that of the intermediate layer so as to be in contact with the intermediate layer. The semiconductor light emitting layer may be a laser diode or a LED.

Abstract: In a vehicle air conditioner including a front automatic air-conditioning unit and a rear manual air-conditioning unit, an air-conditioning control unit changes a correction value of a target air temperature to be blown into a front seat area of a passenger compartment based on an outside air temperature detected by an outside temperature sensor when the rear manual air-conditioning unit operates. Specifically, in a low outside air temperature, the target air temperature for the front seat area is decreased by changing the correction value at a minus side. Accordingly, even a rear heater of the rear manual air-conditioning unit is operated during operation of the front air-conditioning unit, an air temperature blown toward the front seat area in the passenger compartment can be controlled to a set temperature.

Abstract: In a vehicle air conditioner including a front automatic air-conditioning unit and a rear manual air-conditioning unit, an air-conditioning control unit changes a correction value of a target air temperature to be blown into a front seat area of a passenger compartment based on an outside air temperature detected by an outside temperature sensor when the rear manual air-conditioning unit operates. Specifically, in a low outside air temperature, the target air temperature for the front seat area is decreased by changing the correction value at a minus side. Accordingly, even a rear heater of the rear manual air-conditioning unit is operated during operation of the front air-conditioning unit, an air temperature blown toward the front seat area in the passenger compartment can be controlled to a set temperature.

Abstract: A method of forming a compound semiconductor device. The method includes the steps of depositing a film that contains zinc oxide and silicon oxide to contain the zinc oxide by 70 wt % or more on compound semiconductor layer as a diffusion source, and diffusing zinc from the diffusion source into the compound semiconductor layer by annealing. Accordingly, there can be provided a compound semiconductor device manufacturing method containing the step of diffusing zinc into compound semiconductor layers, capable of deepening a Zn diffusion position from a ZnO/SiO2 film to such extent that COD endurance of laser end face window structures can be increased rather than the prior art.

Abstract: In the S3-type semiconductor laser, when an angle of a first growth profile line to the first principal plane, the first growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the first layer of the first conduction type cladding layer is &thgr;1, an angle of a second growth profile line to the first principal plane, the second growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the second layer of the first conduction type cladding layer is &thgr;2, an angle of a third growth profile line to the first principal plane, the third growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the third layer of the first conduction type cladding layer is &thgr;3, and an angle of a fourth growth profile line to the first principal plane, the fourth growth profile line connecting respective lower side lines of an upper inclined plane and

Abstract: There are included the steps of depositing a film that contains zinc oxide and silicon oxide to contain the zinc oxide by 70 wt % or more on compound semiconductor layer as a diffusion source, and diffusing zinc from the diffusion source into the compound semiconductor layer by annealing. Accordingly, there can be provided a compound semiconductor device manufacturing method containing the step of diffusing zinc into compound semiconductor layers, capable of deepening a Zn diffusion position from a ZnO/SiO2 film to such extent that COD endurance of laser end face window structures can be increased rather than the prior art.

Abstract: In the S3-type semiconductor laser, when an angle of a first growth profile line to the first principal plane, the first growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the first layer of the first conduction type cladding layer is &thgr;1, an angle of a second growth profile line to the first principal plane, the second growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the second layer of the first conduction type cladding layer is &thgr;2, an angle of a third growth profile line to the first principal plane, the third growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the third layer of the first conduction type cladding layer is &thgr;3, and an angle of a fourth growth profile line to the first principal plane, the fourth growth profile line connecting respective lower side lines of an upper inclined plane and

Abstract: A device which detects the amount of displacement of a movable member moved by a feed device, and which outputs pulse signals corresponding to the amount of such displacement.