Patents by Inventor Katsunari Nishikawa

Katsunari Nishikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method of semiconductor device, method for controlling ion beam, and ion implantation apparatus
    Patent number: 8581216
    Abstract: The ion implantation apparatus includes a source head, an extraction electrode having a slit trough which a part of an ion beam outputted from the source head passes, a magnet for curving a trajectory of the ion beam passed through the slit, a target to be irradiated with the ion beam outputted from the magnet, an electric current measuring device facing an ion exit port of the source head through the slit of the extraction electrode, and a control portion for controlling a position of the extraction electrode based on a measured result of the current measuring device in a state that production of a magnetic field from the magnet is stopped.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: November 12, 2013
    Assignee: Fujitsu Semiconductor Limited
    Inventor: Katsunari Nishikawa
  • MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, METHOD FOR CONTROLLING ION BEAM, AND ION IMPLANTATION APPARATUS
    Publication number: 20110012034
    Abstract: The ion implantation apparatus includes a source head, an extraction electrode having a slit trough which a part of an ion beam outputted from the source head passes, a magnet for curving a trajectory of the ion beam passed through the slit, a target to be irradiated with the ion beam outputted from the magnet, an electric current measuring device facing an ion exit port of the source head through the slit of the extraction electrode, and a control portion for controlling a position of the extraction electrode based on a measured result of the current measuring device in a state that production of a magnetic field from the magnet is stopped.
    Type: Application
    Filed: September 29, 2010
    Publication date: January 20, 2011
    Applicant: FUJITSU SEMICONDUCTOR LIMITED
    Inventor: Katsunari Nishikawa