Patents by Inventor Katsunobu Hori
Katsunobu Hori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7550388Abstract: A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is at least one selected from polysaccharide and polyvinyl alcohol. The polysaccharide is starch, amylopectin, glycogen, cellulose, pectin, hemicellulose, pullulan, or elsinan. Among them, pullulan is preferable. The abrasive is at least one selected from aluminum oxide and silicon dioxide, preferably at least one selected from fumed silica, fumed alumina, and colloidal silica. The polishing composition can be suitably used in polishing for forming wiring a semiconductor device.Type: GrantFiled: March 21, 2005Date of Patent: June 23, 2009Assignee: Fujima IncorporatedInventors: Junhui Oh, Atsunori Kawamura, Tsuyoshi Matsuda, Tatsuhiko Hirano, Kenji Sakai, Katsunobu Hori
-
Publication number: 20090127500Abstract: A polishing composition contains a triazole having a 6-membered ring skeleton, a water soluble polymer, an oxidant, and abrasive grains. The triazole has a hydrophobic functional group in the 6-membered ring skeleton. The content of the triazole in the polishing composition is 3 g/L or less. The pH of the polishing composition is 7 or more. The polishing composition is suitably used in polishing for forming wiring of a semiconductor device.Type: ApplicationFiled: September 1, 2006Publication date: May 21, 2009Applicant: FUJIMI INCORPORATEDInventors: Tatsuhiko Hirano, Hiroshi Asano, Katsunobu Hori
-
Publication number: 20080265205Abstract: A polishing composition contains a protective film forming agent, an oxidant, and an etching agent. The protective film forming agent includes at least one type of compound selected from benzotriazole and a benzotriazole derivative and at least one type of compound selected from the compounds represented by the general formula ROR?COOH and a general formula ROR?OPO3H2 where R represents an alkyl group or an alkylphenyl group, R? represents a polyoxyethylene group, polyoxypropylene group, or poly(oxyethylene/oxypropylene) group. The pH of the polishing composition is 8 or more. The polishing composition is suitably used in polishing for forming wiring of a semiconductor device.Type: ApplicationFiled: September 1, 2006Publication date: October 30, 2008Applicant: FUJIMI INCORPORATEDInventors: Junhui Oh, Hiroshi Asano, Katsunobu Hori
-
Publication number: 20060134908Abstract: A method for polishing an object to form wiring for a semiconductor device includes: removing part of an outside portion of a conductor layer through chemical and mechanical polishing to expose an upper surface of a barrier layer; and removing a remaining part of the outside portion of the conductor layer and an outside portion of the barrier layer through chemical and mechanical polishing to expose an upper surface of an insulator layer. When removing part of the outside portion of the conductor layer, the upper surface of the object is chemically and mechanically polished using a first polishing composition containing a film forming agent. Subsequently, the upper surface of the object is washed to remove a protective film formed on an upper surface of the conductor layer by the film forming agent in the first polishing composition. Thereafter, the upper surface of the object is chemically and mechanically polished again using a second polishing composition containing the film forming agent.Type: ApplicationFiled: November 4, 2005Publication date: June 22, 2006Inventors: Junhui Oh, Atsunori Kawamura, Tsuyoshi Matsuda, Tatsuhiko Hirano, Katsunobu Hori, Kenji Sakai
-
Publication number: 20060060974Abstract: A polishing composition comprising the following components (a) to (e): (a) silicon dioxide, (b) an alkaline compound, (c) an anticorrosive, (d) a water soluble polymer compound, and (e) water.Type: ApplicationFiled: August 30, 2005Publication date: March 23, 2006Applicant: FUJIMI INCORPORATEDInventors: Tatsuhiko Hirano, Junhui Oh, Akifumi Sakao, Atsunori Kawamura, Katsunobu Hori
-
Publication number: 20050215060Abstract: A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is at least one selected from polysaccharide and polyvinyl alcohol. The polysaccharide is starch, amylopectin, glycogen, cellulose, pectin, hemicellulose, pullulan, or elsinan. Among them, pullulan is preferable. The abrasive is at least one selected from aluminum oxide and silicon dioxide, preferably at least one selected from fumed silica, fumed alumina, and colloidal silica. The polishing composition can be suitably used in polishing for forming wiring a semiconductor device.Type: ApplicationFiled: March 21, 2005Publication date: September 29, 2005Applicant: Fujimi IncorporatedInventors: Junhui Oh, Atsunori Kawamura, Tsuyoshi Matsuda, Tatsuhiko Hirano, Kenji Sakai, Katsunobu Hori
-
Publication number: 20050208761Abstract: A polishing composition contains a surface irregularity-inhibitor, silicon dioxide, an acid, an oxidant, and water. The surface irregularity-inhibitor is at least one selected from, for example, stored polysaccharides and extracellular polysaccharides. The silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The acid is at least one selected from, for example, nitric acid, hydrochloric acid, sulfuric acid, lactic acid, acetic acid, oxalic acid, citric acid, malic acid, succinic acid, butyric acid, and malonic acid. The oxidant is, for example, hydrogen peroxide, persulfate, periodate, perchlorate, nitrate salt, or an oxidative metallic salt. The polishing composition can be suitably used in polishing for forming wiring in a semiconductor device.Type: ApplicationFiled: March 21, 2005Publication date: September 22, 2005Applicant: Fujimi IncorporatedInventors: Junhui Oh, Atsunori Kawamura, Tsuyoshi Matsuda, Tatsuhiko Hirano, Kenji Sakai, Katsunobu Hori
-
Patent number: 6822334Abstract: A hard mask material 2 such as a silicon oxide film is formed on an aluminum alloy film 3. The hard mask material 2 is patterned in the form of a thick film wiring 6, followed by etching the aluminum alloy film 3 to a given depth through the mask. A resist 5 applied to the thin film portion of the aluminum alloy film 3 is patterned in the form of a thin film wiring 7. Etching through the resist 5 and the hard mask material 2 as a mask is effected to form the thick film wiring 6 and the thin film wiring 7 in the same layer.Type: GrantFiled: January 10, 2001Date of Patent: November 23, 2004Assignee: Renesas Technology Corp.Inventors: Katsunobu Hori, Nobuo Fujiwara, Takashi Watadani, Makoto Nagano
-
Patent number: 6603163Abstract: A semiconductor device having a capacitor and a method of manufacturing thereof are provided, securing a certain capacitance while allowing the size to be reduced. The semiconductor device includes a capacitor lower electrode having an upper surface and including a metal film, a dielectric film deposited on the upper surface of the capacitor lower electrode and having its thickness smaller than that of the capacitor lower electrode, and a capacitor upper electrode deposited on the dielectric film, having its width smaller than that of the capacitor lower electrode and including a metal film.Type: GrantFiled: May 17, 2001Date of Patent: August 5, 2003Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Katsunobu Hori, Takeshi Matsunuma, Kenichiro Shiozawa, Moriaki Akazawa
-
Publication number: 20030067053Abstract: A semiconductor device having a capacitor and a method of manufacturing thereof are provided, securing a certain capacitance while allowing the size to be reduced. The semiconductor device includes a capacitor lower electrode having an upper surface and including a metal film, a dielectric film deposited on the upper surface of the capacitor lower electrode and having its thickness smaller than that of the capacitor lower electrode, and a capacitor upper electrode deposited on the dielectric film, having its width smaller than that of the capacitor lower electrode and including a metal film.Type: ApplicationFiled: October 30, 2002Publication date: April 10, 2003Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Katsunobu Hori, Takeshi Matsunuma, Kenichiro Shiozawa, Moriaki Akazawa
-
Publication number: 20020076894Abstract: A semiconductor device having a capacitor and a method of manufacturing thereof are provided, securing a certain capacitance while allowing the size to be reduced. The semiconductor device includes a capacitor lower electrode having an upper surface and including a metal film, a dielectric film deposited on the upper surface of the capacitor lower electrode and having its thickness smaller than that of the capacitor lower electrode, and a capacitor upper electrode deposited on the dielectric film, having its width smaller than that of the capacitor lower electrode and including a metal film.Type: ApplicationFiled: May 17, 2001Publication date: June 20, 2002Applicant: Mitsubishi Denki Kabushiki KaishaInventors: Katsunobu Hori, Takeshi Matsunuma, Kenichiro Shiozawa, Moriaki Akazawa
-
Publication number: 20020014695Abstract: A hard mask material 2 such as a silicon oxide film is formed on an aluminum alloy film 3. The hard mask material 2 is patterned in the form of a thick film wiring 6, followed by etching the aluminum alloy film 3 to a given depth through the mask. A resist 5 applied to the thin film portion of the aluminum alloy film 3 is patterned in the form of a thin film wiring 7. Etching through the resist 5 and the hard mask material 2 as a mask is effected to form the thick film wiring 6 and the thin film wiring 7 in the same layer.Type: ApplicationFiled: January 10, 2001Publication date: February 7, 2002Applicant: Mitsubishi Denki Kabushiki KaishaInventors: Katsunobu Hori, Nobuo Fujiwara, Takashi Watadani, Makoto Nagano