Abstract: A lubricator 2 supplies an unwound coil material as an alloy plate material 11 to a metal beverage can production line for forming the alloy plate material 11 into a metal beverage can.

Abstract: An upstream-side guidance part 400 is provided with plural upstream-side guidance members 410 guiding disc-shaped members 300. A downstream-side guidance part 500 is provided with plural downstream-side guidance members 510 guiding the disc-shaped members 300. The positions of the upstream-side guidance members 410 in the circumferential direction of the disc-shaped member 300 are different from the positions of the downstream-side guidance members 510 in the circumferential direction of the disc-shaped member 300, and at least one of the upstream-side guidance part 400 and the downstream-side guidance part 500 is able to move forward and backward with respect to the other.

Abstract: An upstream-side guidance part 400 is provided with plural upstream-side guidance members 410 guiding disc-shaped members 300. A downstream-side guidance part 500 is provided with plural downstream-side guidance members 510 guiding the disc-shaped members 300. The positions of the upstream-side guidance members 410 in the circumferential direction of the disc-shaped member 300 are different from the positions of the downstream-side guidance members 510 in the circumferential direction of the disc-shaped member 300, and at least one of the upstream-side guidance part 400 and the downstream-side guidance part 500 is able to move forward and backward with respect to the other.

Abstract: A vehicular information display apparatus is provided which includes a display apparatus provided in a vehicle compartment and a display controller for controlling display of the display apparatus and is arranged to display specific information about a vehicle in a form to include a graphic on a screen of the display apparatus. The vehicular information display apparatus switches between a first display mode in which the specific information is displayed on a display region in the screen of the display apparatus and a second display mode in which the specific information is displayed on a display region smaller than the first display mode in the screen of the display apparatus. The display controller displays the graphic of the specific information by changing an orientation or a shape of the graphic when the display region is changed.

Abstract: Laser equipment for outputting output lights having different wavelengths includes: a substrate; an excitation light generation element for emitting excitation lights including surface emitting laser elements and disposed on the substrate; and a light converter having a pair of second reflection layers and a solid laser medium layer, both of which provide a resonator. The solid laser medium layer is capable of generating lights having different peak wavelengths by receiving the excitation lights. The light converter is disposed on an output surface of the excitation light generation element.

Abstract: Laser equipment for outputting output lights having different wavelengths includes: a substrate; an excitation light generation element for emitting excitation lights including surface emitting laser elements and disposed on the substrate; and a light converter having a pair of second reflection layers and a solid laser medium layer, both of which provide a resonator. The solid laser medium layer is capable of generating lights having different peak wavelengths by receiving the excitation lights. The light converter is disposed on an output surface of the excitation light generation element.

Abstract: A laser equipment for outputting output lights having different wavelengths includes: a substrate; an excitation light generation element for emitting excitation lights including surface emitting laser elements and disposed on the substrate; and a light converter having a pair of second reflection layers and a solid laser medium layer, both of which provide a resonator. The solid laser medium layer is capable of generating lights having different peak wavelengths by receiving the excitation lights. The light converter is disposed on an output surface of the excitation light generation element.

Abstract: A laser apparatus includes an excitation light generator for emitting excitation light and a wavelength converter including a solid laser medium for emitting laser light by converting a wavelength of the excitation light. The excitation light generator includes a surface-emitting laser having a first reflector with top and bottom reflectors and an active layer disposed between the top and bottom reflectors. The excitation light generator further includes a second reflector configured to highly reflect the excitation light. The solid laser medium is disposed between the surface-emitting laser device and the second reflector. Reflectivities of the top and bottom reflectors of the first reflector are set so that FWHM of the solid laser medium at the wavelength of the excitation light is greater than a resonance wavelength range of the surface-emitting laser device.

Abstract: A laser equipment for outputting output lights having different wavelengths includes: a substrate; an excitation light generation element for emitting excitation lights including surface emitting laser elements and disposed on the substrate; and a light converter having a pair of second reflection layers and a solid laser medium layer, both of which provide a resonator. The solid laser medium layer is capable of generating lights having different peak wavelengths by receiving the excitation lights. The light converter is disposed on an output surface of the excitation light generation element.

Abstract: A laser equipment includes: a surface emitting laser for emitting an excitation light; a light converter for outputting an output light by receiving the excitation light; and a lens portion for collimating or concentrating a light. The surface emitting laser has an emitting surface for emitting the excitation light, and the light converter has an input surface for receiving the excitation light and an output surface for outputting the output light. The surface emitting laser, the light converter and the lens portion are integrally stacked so that the lens portion is disposed between the emitting surface of the surface emitting laser and the input surface of the light converter or disposed on the output surface of the light converter.

Abstract: In performing an light emitting operation using a plurality of semiconductor light-emitting devices, these semiconductor light-emitting devices are lighted up such that the driving current is lessened and the life time of the devices is prevented from being shortened and lights can be emitted to a remote site without reducing an amount of lights. Semiconductor laser devices 23a to 23c, which emit lights through independent lenses 25a to 25c, are connected in series to each other and connected to a signal generating circuit 24, serving as a power supply, so as to perform pulse lighting, whereby making it possible to light up three semiconductor laser devices simultaneously at a driving current corresponding to one semiconductor laser device. A package of semiconductor laser devices 23a to 23c comprises three lead terminals, and an electrical connection to two lead terminals, which are electrically insulated from a metallic base, is established.

Abstract: A high power stripe-geometry heterojunction laser diode device is provided which may be employed in a radar system designed to measure the distance to a target. The laser diode device has an electric circuit path extending from a first electrode connected to a voltage source to a second electrode connected to ground and features addition of a resistance of 1 m&OHgr; or more to the electric circuit path to provide uniform current distribution in an active layer for emitting a high density laser beam.

Abstract: An active layer in which laser light is generated by injecting driving current therein is sandwiched between semiconductor layers. The active layer has a multi-quantum-well structure, and the layers located at both sides of the active layer are made of an AlGaAs-based material. Refractive indices of the layers are set asymmetrically with respect to the active layer by properly selecting aluminum-mixing ratios in AlGa. Since the light generated in the active layer is distributed more in a layer having a higher refractive index, a peak of the light distribution is shifted from the active layer into the layer having a higher refractive index. Thus, energy concentration to the active layer is avoided. A thickness of the layer having a higher refractive index may be made thicker to further enhance the energy concentration shift from the active layer.

Abstract: A material and method for bonding a semiconductor device to a pedestal, which can obtain a sufficient bonding strength and stable electric contact, are disclosed. On an n-type electrode constituting an ohmic electrode for a semiconductor laser device are formed a Ni layer and an Au-Sn solder layer. Then, the solder layer is melted and bonded to a heat sink provided with Au-plating. The film thickness of the Ni layer is set to approximately 500 .ANG. or more. When the solder layer is melted, Ni in the Ni layer diffuses into the solder layer and Sn in the solder layer diffuses into the Ni layer. By this mutual diffusion, bonding strength and wettability between the semiconductor device and pedestal can be improved. In addition, by setting the composition ratio of Ni layer to the Au-Sn solder layer to 1.3 wt % or more and under 10 wt %, bonding can be performed at a lower melting point and concurrently a higher bonding strength can be obtained.

Abstract: A high-output semiconductor laser element has one of a Cr/Pt/Au electrode and Cr/Ni/Au electrode as a P-type electrode to provide an electrode construction that is robust with respect to heat, high in reliability and stable for a long period of time. The P-type electrode is disposed on an N-type substrate via an epitaxial layer and defines a stripe 41 having a width of 100 .mu.m or more.

Abstract: A CMIS transistor suitable for device miniaturization, elimination of degradation of operational characteristics by hot carrier effect, and elimination of decrease of threshold voltage caused by short channel effect, includes a laterally spreading N-type diffusion region having an impurity concentration level higher than P-type and N-type wells but lower than source and drain regions, such that the N-type diffusion region extends laterally into a part located immediately below an edge of an insulating gate and has a depth smaller than a depth of the source and drain regions. The device is thereby capable of increasing the width of depletion layer at the bottom of the source and drain regions while maintaining effectiveness as a punch-thorough stopper. Thereby, the junction capacitance at the source and drain regions is reduced and the operational speed of the device improved in the P-channel transistor part in the device.

Abstract: The semiconductor laser device provides a large output laser beam approximating a circular shape. Formed on an n-GaAs substrate is an n-GaAs layer, further thereon in mesa type with an n-Al.sub.0.4 Ga.sub.0.6 As clad layer, an n-Al.sub.0.2 Ga.sub.0.8 As optical guide layer, an active layer formed of Al.sub.0.2 Ga.sub.0.8 As/GaAs multi-quantum well structure, a p-Al.sub.0.2 Ga.sub.0.8 As optical guide layer, a p-Al.sub.0.4 Ga.sub.0.6 As clad layer, and a p-GaAs layer. A thickness of the active layer is made equal to 127.5 nm, and a sum of thicknesses of the active layer and the optical guide layers and is made equal to or more than 1.5 .mu.m. On the n-GaAs layer and the upper surface of mesa shaped portion are formed an insulating film and a p-type electrode, the stripe width of which is equal to 400 .mu.m.

Abstract: A CMIS transistor suitable for device miniaturization, elimination of degradation of operational characteristics by hot carrier effect, and elimination of decrease of threshold voltage caused by short channel effect, includes a laterally spreading N-type diffusion region having an impurity concentration level higher than P-type and N-type wells but lower than source and drain regions, such that the N-type diffusion region extends laterally into a part located immediately below an edge of an insulating gate and has a depth smaller than a depth of the source and drain regions. The device is thereby capable of increasing the width of depletion layer at the bottom of the source and drain regions while maintaining effectiveness as a punch-thorough stopper. Thereby, the junction capacitance at the source and drain regions is reduced and the operational speed of the device improved in the P-channel transistor part in the device.

Abstract: A CMIS transistor suitable for device miniaturization, elimination of degradation of operational characteristics by hot carrier effect, and elimination of decrease of threshold voltage caused by short channel effect, includes a laterally spreading N-type diffusion region having an impurity concentration level higher than P-type and N-type wells but lower than source and drain regions, such that the N-type diffusion region extends laterally into a part located immediately below an edge of an insulating gate and has a depth smaller than a depth of the source and drain regions. The device is thereby capable of increasing the width of depletion layer at the bottom of the source and drain regions while maintaining effectiveness as a punch-through stopper. Thereby, the junction capacitance at the source and drain regions is reduced and the operational speed of the device improved in the P-channel transistor part in the device.

Abstract: A make-up brush comprises a tapered hollow body made of a porous material restorable in shape when deformed, having a surface for oozing a make-up liquid, a make-up liquid guiding core covered by the hollow body and tightly inserted through a head seat fixed to one end of a liquid cylinder, a head cylinder through which the tapered hollow body extends, the head cylinder being secured to one end of a shaft cylinder to fix the tapered hollow body thereat, and a viscous substance filled in the liquid cylinder after the make-up liquid is filled in the liquid cylinder on a side of the head seat, thereby causing the make-up liquid to smoothly flow out of the make-up brush.