Patents by Inventor Katsunori Azuma

Katsunori Azuma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230326993
    Abstract: A method of manufacturing a semiconductor element includes forming a mask on a front surface of a substrate, the mask having an opening to expose the front surface; growing a first semiconductor layer by epitaxially growing a semiconductor along the mask, starting from the front surface exposed through the opening, and growing a second semiconductor layer on a surface of the first semiconductor layer located opposite to the substrate in a layering direction, and providing an electrode on a surface of the second semiconductor layer located opposite to the surface of the first semiconductor layer in the layering direction. A width from an end portion of the surface to the electrode is smaller than a width of the mask.
    Type: Application
    Filed: June 13, 2023
    Publication date: October 12, 2023
    Applicant: KYOCERA Corporation
    Inventors: Katsunori AZUMA, Katsuaki MASAKI, Kokichi FUJITA, Yuichiro HAYASHI, Tomohisa HIRAYAMA, Tatsuro SAWADA, hAYAO kasai
  • Publication number: 20230197446
    Abstract: A manufacturing method for a semiconductor element includes providing a mask including an opening on a surface of a substrate while leaving a step difference in the mask at an upper surface region around the opening, epitaxially growing a semiconductor from the surface exposed through the opening to over the upper surface region around the opening, to produce a semiconductor element including a semiconductor layer including a first surface to which the step difference is transferred, and dry-etching the first surface of the semiconductor layer to transfer the step difference, the first surface being a contact surface with the mask before the dry etching is performed. The mask contains an element that serves as a donor or an acceptor in the semiconductor layer.
    Type: Application
    Filed: March 29, 2021
    Publication date: June 22, 2023
    Applicant: KYOCERA Corporation
    Inventors: Katsunori AZUMA, Tatsuro SAWADA
  • Publication number: 20230022774
    Abstract: A manufacturing method for a semiconductor element includes a step of forming a mask partly having an opening and configured to cover a surface of a base substrate, and a step of forming a semiconductor layer containing a predetermined semiconductor material by inducing epitaxial growth along the mask from the surface of the base substrate exposed from an opening. A surface on the side closer to the semiconductor layer in the mask is formed of an amorphous first material that does not contain an element to serve as a donor or an acceptor in the predetermined semiconductor material.
    Type: Application
    Filed: December 11, 2020
    Publication date: January 26, 2023
    Applicant: KYOCERA Corporation
    Inventors: Katsunori AZUMA, Tomohisa HIRAYAMA
  • Publication number: 20220359196
    Abstract: A method for manufacturing a semiconductor element includes providing, on a surface of a substrate 11, a mask 12 which has an opening 12a and in which a peripheral upper surface region of the opening is processed to have a predetermined structure, and epitaxially growing a semiconductor from the surface of the substrate exposed from the opening to the top of the peripheral upper surface region to fabricate a semiconductor element having a semiconductor layer 13 with the predetermined structure transferred thereon. In one example, the predetermined structure is due to a shape having a difference in level. In another example, the predetermined structure is due to a selectively arranged element, and the transferred element moves into the semiconductor layer.
    Type: Application
    Filed: September 28, 2020
    Publication date: November 10, 2022
    Applicant: KYOCERA Corporation
    Inventors: Katsunori AZUMA, Naoyoshi KOMATSU, Tatsuro SAWADA, Yusuke NAKAZATO, Tomohisa HIRAYAMA
  • Patent number: 9000601
    Abstract: The respective main electrodes of the semiconductor switching elements such as IGBTs, which are respectively mounted on the plurality of insulating boards, are electrically connected to each other via the conductor member. This configuration makes it possible to suppress the occurrence of the resonant voltage due to the junction capacity and the parasitic inductance of each semiconductor switching element.
    Type: Grant
    Filed: June 26, 2012
    Date of Patent: April 7, 2015
    Assignee: Hitachi Power Semiconductor Device, Ltd.
    Inventors: Katsunori Azuma, Kentaro Yasuda, Takahiro Fujita, Katsuaki Saito, Yoshihiko Koike, Michiaki Hiyoshi
  • Patent number: 8736043
    Abstract: A power semiconductor device is provided in which reliability can be improved when the parallel number of semiconductor devices increases. When a bonding face on collector electrode is on an upper side, and a bonding face on emitter electrode is on a lower side, a collector electrode joint region as a joint region between a collector trace and a collector electrode on a chip mounted substrate and an emitter electrode joint region as a joint region between an emitter trace and an emitter electrode are located at a same position in an up-and-down direction and are adjacent in a right-and-left direction at an interval of 2 mm or more and 4 mm or less.
    Type: Grant
    Filed: July 9, 2012
    Date of Patent: May 27, 2014
    Assignee: Hitachi, Ltd.
    Inventors: Akitoyo Konno, Katsunori Azuma, Takashi Ando
  • Patent number: 8519561
    Abstract: A power module includes an upper arm circuit unit and a lower arm circuit unit each having a power semiconductor element; an insulating substrate with the units mounted on one surface thereof; a metal base bonded onto the other surface of the substrate opposite to the one surface where the units are mounted; a first connection conductor for supplying a high potential to the upper unit from outside; a second connection conductor for supplying a low potential to the lower unit from outside; an insulating sheet interposed between the conductors; and a resin case disposed on the metal base to support the conductors, the conductors are flat conductors and laminated with the sheet sandwiched therebetween; the sheet extends from one end of the laminated structure to secure the creepage distance between the conductors; and the case is furnished with a recess for containing the laminated structure.
    Type: Grant
    Filed: June 29, 2010
    Date of Patent: August 27, 2013
    Assignee: Hitachi, Ltd.
    Inventors: Katsunori Azuma, Mutsuhiro Mori, Michiaki Hiyoshi, Seiichi Hayakawa, Koji Sasaki, Isamu Yoshida
  • Patent number: 8422235
    Abstract: The present invention provides a vehicle power module and a power converter including a power semiconductor element (328), a plurality of connecting conductors (371U, 372U, 373U) for transmitting current to the power semiconductor element (328), and a metallic base (304) upon which the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, and 373U) are mounted; and the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, and 373U) are mounted upon the metallic base (304) so as to form a looped current path. Desirably, the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, 373U) are arranged so as to form two or more looped current paths.
    Type: Grant
    Filed: July 30, 2009
    Date of Patent: April 16, 2013
    Assignee: Hitachi Automotive Systems, Ltd.
    Inventors: Katsunori Azuma, Mutsuhiro Mori, Kinya Nakatsu, Seiichi Hayakawa, Fusanori Nishikimi
  • Patent number: 8422244
    Abstract: A power converter structure in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The power converter structure includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.
    Type: Grant
    Filed: March 3, 2011
    Date of Patent: April 16, 2013
    Assignee: Hitachi, Ltd.
    Inventors: Katsunori Azuma, Masamitsu Inaba, Mutsuhiro Mori, Kenichiro Nakajima
  • Patent number: 8411454
    Abstract: A capacitor module in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The capacitor module includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: April 2, 2013
    Assignee: Hitachi, Ltd.
    Inventors: Katsunori Azuma, Masamitsu Inaba, Mutsuhiro Mori, Kenichiro Nakajima
  • Patent number: 8369100
    Abstract: A power converter is disclosed in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The power converter includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors, which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.
    Type: Grant
    Filed: March 1, 2011
    Date of Patent: February 5, 2013
    Assignee: Hitachi, Ltd.
    Inventors: Katsunori Azuma, Masamitsu Inaba, Mutsuhiro Mori, Kenichiro Nakajima
  • Publication number: 20130015496
    Abstract: A power semiconductor device is provided in which reliability can be improved when the parallel number of semiconductor devices increases. When a bonding face on collector electrode is on an upper side, and a bonding face on emitter electrode is on a lower side, a collector electrode joint region as a joint region between a collector trace and a collector electrode on a chip mounted substrate and an emitter electrode joint region as a joint region between an emitter trace and an emitter electrode are located at a same position in an up-and-down direction and are adjacent in a right-and-left direction at an interval of 2 mm or more and 4 mm or less.
    Type: Application
    Filed: July 9, 2012
    Publication date: January 17, 2013
    Applicant: Hitachi, Ltd.
    Inventors: Akitoyo Konno, Katsunori Azuma, Takashi Ando
  • Publication number: 20130001805
    Abstract: The respective main electrodes of the semiconductor switching elements such as IGBTs, which are respectively mounted on the plurality of insulating boards, are electrically connected to each other via the conductor member. This configuration makes it possible to suppress the occurrence of the resonant voltage due to the junction capacity and the parasitic inductance of each semiconductor switching element.
    Type: Application
    Filed: June 26, 2012
    Publication date: January 3, 2013
    Inventors: Katsunori AZUMA, Kentaro Yasuda, Takahiro Fujita, Katsuaki Saito, Yoshihiko Koike, Michiaki Hiyoshi
  • Patent number: 8294258
    Abstract: In a power semiconductor module, a semiconductor device including electrode surfaces for connection on its front side and back side is connected on its back side to a first extraction electrode through soldering; a metal surface of one side of a laminated conductor having a laminated structure in which at least two types of metals are laminated is directly, intermetallically connected to the front side of the semiconductor device; a second extraction electrode is connected to a metal surface of another side of the laminated conductor through soldering; and the laminated conductor includes a plurality of arch-like protrusions and a straight section connecting the arch-like protrusions, the straight section is connected with the front side of the semiconductor device, and the protrusions are connected with the second extraction electrode.
    Type: Grant
    Filed: April 1, 2011
    Date of Patent: October 23, 2012
    Assignee: Hitachi, Ltd.
    Inventor: Katsunori Azuma
  • Patent number: 8243463
    Abstract: A capacitor module in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The capacitor module includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.
    Type: Grant
    Filed: March 1, 2010
    Date of Patent: August 14, 2012
    Assignee: Hitachi, Ltd.
    Inventors: Katsunori Azuma, Masamitsu Inaba, Mutsuhiro Mori, Kenichiro Nakajima
  • Publication number: 20120008357
    Abstract: A capacitor module in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The capacitor module includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.
    Type: Application
    Filed: September 22, 2011
    Publication date: January 12, 2012
    Applicant: Hitachi, Ltd.
    Inventors: Katsunori AZUMA, Masamitsu INABA, Mutsuhiro MORI, Kenichiro NAKAJIMA
  • Publication number: 20110241198
    Abstract: In a power semiconductor module, a semiconductor device including electrode surfaces for connection on its front side and back side is connected on its back side to a first extraction electrode through soldering; a metal surface of one side of a laminated conductor having a laminated structure in which at least two types of metals are laminated is directly, intermetallically connected to the front side of the semiconductor device; a second extraction electrode is connected to a metal surface of another side of the laminated conductor through soldering; and the laminated conductor includes a plurality of arch-like protrusions and a straight section connecting the arch-like protrusions, the straight section is connected with the front side of the semiconductor device, and the protrusions are connected with the second extraction electrode.
    Type: Application
    Filed: April 1, 2011
    Publication date: October 6, 2011
    Applicant: Hitachi, Ltd.
    Inventor: Katsunori AZUMA
  • Patent number: 7974101
    Abstract: A power converter in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The power converter includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.
    Type: Grant
    Filed: November 16, 2006
    Date of Patent: July 5, 2011
    Assignee: Hitachi, Ltd.
    Inventors: Katsunori Azuma, Masamitsu Inaba, Mutsuhiro Mori, Kenichiro Nakajima
  • Publication number: 20110149625
    Abstract: A capacitor module in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The capacitor module includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.
    Type: Application
    Filed: March 1, 2011
    Publication date: June 23, 2011
    Applicant: Hitachi, Ltd.
    Inventors: Katsunori AZUMA, Masamitsu Inaba, Mutsuhiro Mori, Kenichiro Nakajima
  • Publication number: 20110149467
    Abstract: A capacitor module in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The capacitor module includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.
    Type: Application
    Filed: March 3, 2011
    Publication date: June 23, 2011
    Applicant: Hitachi, Ltd.
    Inventors: Katsunori AZUMA, Masamitsu Inaba, Mutsuhiro Mori, Kenichiro Nakajima