Abstract: A method of manufacturing a semiconductor element includes forming a mask on a front surface of a substrate, the mask having an opening to expose the front surface; growing a first semiconductor layer by epitaxially growing a semiconductor along the mask, starting from the front surface exposed through the opening, and growing a second semiconductor layer on a surface of the first semiconductor layer located opposite to the substrate in a layering direction, and providing an electrode on a surface of the second semiconductor layer located opposite to the surface of the first semiconductor layer in the layering direction. A width from an end portion of the surface to the electrode is smaller than a width of the mask.

Abstract: A manufacturing method for a semiconductor element includes providing a mask including an opening on a surface of a substrate while leaving a step difference in the mask at an upper surface region around the opening, epitaxially growing a semiconductor from the surface exposed through the opening to over the upper surface region around the opening, to produce a semiconductor element including a semiconductor layer including a first surface to which the step difference is transferred, and dry-etching the first surface of the semiconductor layer to transfer the step difference, the first surface being a contact surface with the mask before the dry etching is performed. The mask contains an element that serves as a donor or an acceptor in the semiconductor layer.

Abstract: A manufacturing method for a semiconductor element includes a step of forming a mask partly having an opening and configured to cover a surface of a base substrate, and a step of forming a semiconductor layer containing a predetermined semiconductor material by inducing epitaxial growth along the mask from the surface of the base substrate exposed from an opening. A surface on the side closer to the semiconductor layer in the mask is formed of an amorphous first material that does not contain an element to serve as a donor or an acceptor in the predetermined semiconductor material.

Abstract: A method for manufacturing a semiconductor element includes providing, on a surface of a substrate 11, a mask 12 which has an opening 12a and in which a peripheral upper surface region of the opening is processed to have a predetermined structure, and epitaxially growing a semiconductor from the surface of the substrate exposed from the opening to the top of the peripheral upper surface region to fabricate a semiconductor element having a semiconductor layer 13 with the predetermined structure transferred thereon. In one example, the predetermined structure is due to a shape having a difference in level. In another example, the predetermined structure is due to a selectively arranged element, and the transferred element moves into the semiconductor layer.

Abstract: The respective main electrodes of the semiconductor switching elements such as IGBTs, which are respectively mounted on the plurality of insulating boards, are electrically connected to each other via the conductor member. This configuration makes it possible to suppress the occurrence of the resonant voltage due to the junction capacity and the parasitic inductance of each semiconductor switching element.

Abstract: A power semiconductor device is provided in which reliability can be improved when the parallel number of semiconductor devices increases. When a bonding face on collector electrode is on an upper side, and a bonding face on emitter electrode is on a lower side, a collector electrode joint region as a joint region between a collector trace and a collector electrode on a chip mounted substrate and an emitter electrode joint region as a joint region between an emitter trace and an emitter electrode are located at a same position in an up-and-down direction and are adjacent in a right-and-left direction at an interval of 2 mm or more and 4 mm or less.

Abstract: A power module includes an upper arm circuit unit and a lower arm circuit unit each having a power semiconductor element; an insulating substrate with the units mounted on one surface thereof; a metal base bonded onto the other surface of the substrate opposite to the one surface where the units are mounted; a first connection conductor for supplying a high potential to the upper unit from outside; a second connection conductor for supplying a low potential to the lower unit from outside; an insulating sheet interposed between the conductors; and a resin case disposed on the metal base to support the conductors, the conductors are flat conductors and laminated with the sheet sandwiched therebetween; the sheet extends from one end of the laminated structure to secure the creepage distance between the conductors; and the case is furnished with a recess for containing the laminated structure.

Abstract: The present invention provides a vehicle power module and a power converter including a power semiconductor element (328), a plurality of connecting conductors (371U, 372U, 373U) for transmitting current to the power semiconductor element (328), and a metallic base (304) upon which the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, and 373U) are mounted; and the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, and 373U) are mounted upon the metallic base (304) so as to form a looped current path. Desirably, the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, 373U) are arranged so as to form two or more looped current paths.

Abstract: A power converter structure in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The power converter structure includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.

Abstract: A capacitor module in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The capacitor module includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.

Abstract: A power converter is disclosed in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The power converter includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors, which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.

Abstract: A power semiconductor device is provided in which reliability can be improved when the parallel number of semiconductor devices increases. When a bonding face on collector electrode is on an upper side, and a bonding face on emitter electrode is on a lower side, a collector electrode joint region as a joint region between a collector trace and a collector electrode on a chip mounted substrate and an emitter electrode joint region as a joint region between an emitter trace and an emitter electrode are located at a same position in an up-and-down direction and are adjacent in a right-and-left direction at an interval of 2 mm or more and 4 mm or less.

Abstract: The respective main electrodes of the semiconductor switching elements such as IGBTs, which are respectively mounted on the plurality of insulating boards, are electrically connected to each other via the conductor member. This configuration makes it possible to suppress the occurrence of the resonant voltage due to the junction capacity and the parasitic inductance of each semiconductor switching element.

Abstract: In a power semiconductor module, a semiconductor device including electrode surfaces for connection on its front side and back side is connected on its back side to a first extraction electrode through soldering; a metal surface of one side of a laminated conductor having a laminated structure in which at least two types of metals are laminated is directly, intermetallically connected to the front side of the semiconductor device; a second extraction electrode is connected to a metal surface of another side of the laminated conductor through soldering; and the laminated conductor includes a plurality of arch-like protrusions and a straight section connecting the arch-like protrusions, the straight section is connected with the front side of the semiconductor device, and the protrusions are connected with the second extraction electrode.

Abstract: A capacitor module in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The capacitor module includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.

Abstract: A capacitor module in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The capacitor module includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.

Abstract: In a power semiconductor module, a semiconductor device including electrode surfaces for connection on its front side and back side is connected on its back side to a first extraction electrode through soldering; a metal surface of one side of a laminated conductor having a laminated structure in which at least two types of metals are laminated is directly, intermetallically connected to the front side of the semiconductor device; a second extraction electrode is connected to a metal surface of another side of the laminated conductor through soldering; and the laminated conductor includes a plurality of arch-like protrusions and a straight section connecting the arch-like protrusions, the straight section is connected with the front side of the semiconductor device, and the protrusions are connected with the second extraction electrode.

Abstract: A power converter in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The power converter includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.

Abstract: A capacitor module in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The capacitor module includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.

Abstract: A capacitor module in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The capacitor module includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.