Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by modifying a surface of a substrate at a first temperature with a plasma of a first oxygen-containing gas; and (b) forming a second oxide layer thicker than the first oxide layer by heating the substrate to a second temperature higher than the first temperature and modifying the surface of the substrate, on which the first oxide layer is formed, with a plasma of a second oxygen-containing gas.

Abstract: Described herein is a technique capable of suppressing sputtering on an inner peripheral surface of a process vessel when a process gas is plasma-excited in the process vessel. According to one aspect thereof, a substrate processing apparatus includes: a process vessel accommodating a process chamber where a process gas is excited into plasma; a gas supplier supplying the process gas into the process chamber; a coil wound around an outer peripheral surface of the process vessel and spaced apart therefrom, wherein a high frequency power is supplied to the coil; and an electrostatic shield disposed between the outer peripheral surface and the coil, wherein the electrostatic shield includes: a partition extending in a circumferential direction to partition between a part of the coil and the outer peripheral surface; and an opening extending in the circumferential direction and opened between another part of the coil and the outer peripheral surface.

Abstract: Described herein is a technique capable of improving electrical characteristics of a semiconductor device. According to the technique, there is provided a method of manufacturing a semiconductor device including: (a) generating oxygen and hydrogen active species; and (b) forming an oxide layer by supplying the oxygen and hydrogen active species to a substrate with a concave structure to subject a film on an inner surface of the concave structure to oxidation, wherein the oxide layer is formed in (b) such that a thickness of the oxide layer is greater on the inner surface than at an upper end portion of the concave structure by setting a ratio of a flow rate of the hydrogen active species to a total flow rate to a predetermined ratio greater than a first ratio at which a rate of forming the oxide layer is maximized at the upper end portion of the concave structure.

Abstract: There is provided a plasma vessel in which a process gas is plasma-excited; a substrate process chamber which is in communication with the plasma vessel; a gas supply system supplying the process gas; and a coil installed to wind around an outer periphery of the plasma vessel and supplied with high-frequency power, wherein the coil is installed such that: a distance from an inner periphery of the coil to an inner periphery of the plasma vessel at a predetermined position on the coil is different from a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at another position on the coil; and a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at a position at which an amplitude of a standing wave of a voltage applied to the coil is maximized is maximized.

Abstract: There is provided a technique that includes: loading a substrate having a metal film composed of a single metal element formed on a surface of the substrate into a process chamber; generating reactive species by plasma-exciting a processing gas containing hydrogen and oxygen; and modifying the metal film by supplying the reactive species to the substrate, wherein in the act of modifying the metal film, the metal film is modified such that a crystal grain size of the metal element constituting the metal film is larger than that before performing the act of modifying the metal film.

Abstract: There is provided a technique that includes: (a) loading a substrate including a base and a first film containing silicon and formed on the base into a process container; (b) converting a modifying gas containing helium into plasma to generate reactive species of helium; and (c) supplying the modifying gas containing the reactive species of helium to a surface of the substrate to respectively modify the first film and an interface layer of the base constituting an interface with the first film.

Abstract: Described herein is a technique capable of improving electrical characteristics of a semiconductor device. According to the technique, there is provided a method of manufacturing a semiconductor device including: (a) generating oxygen and hydrogen active species; and (b) forming an oxide layer by supplying the oxygen and hydrogen active species to a substrate with a concave structure to subject a film on an inner surface of the concave structure to oxidation, wherein the oxide layer is formed in (b) such that a thickness of the oxide layer is greater on the inner surface than at an upper end portion of the concave structure by setting a ratio of a flow rate of the hydrogen active species to a total flow rate to a predetermined ratio greater than a first ratio at which a rate of forming the oxide layer is maximized at the upper end portion of the concave structure.

Abstract: According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) providing a semiconductor processing apparatus including a substrate process chamber, a coil and a substrate support; (b) placing a target substrate with a concave structure of a silicon film on a substrate support, wherein a deteriorated layer is formed on an inner surface of the concave structure by deterioration of a surface layer of the silicon film due to an etching process; (c) supplying an oxygen-containing gas into the substrate process chamber; (d) applying a high frequency power to the coil to generate plasma of the oxygen-containing gas; and (e) oxidizing, by the plasma, a surface of the silicon film exposed in the concave structure wherein the deteriorated layer is formed on the surface.

Abstract: Described herein is a technique capable of improving electrical characteristics of a polysilicon film while suppressing damage to an underlying silicon oxide film. According to the technique described herein, there is provided a there is provided a method of manufacturing a semiconductor device, including: (a) preparing a substrate including a silicon oxide film and a polysilicon film formed on the silicon oxide film, wherein the polysilicon film includes a contact surface contacting the silicon oxide film and an exposed surface facing the contact surface; and (b) supplying a reactive species generated by plasma excitation of a gas containing hydrogen and oxygen to the exposed surface of the polysilicon film.

Abstract: A substrate processing apparatus includes a substrate processing chamber including a plasma generation space where a plasma is generated and a substrate processing space where a substrate is placed during a substrate process; an inductive coupling structure outside the plasma generation space wherein a sum of electrical lengths of a coil of the inductive coupling structure and a waveform adjustment circuit connected to the coil is an integer multiple of a wavelength of an applied power; a substrate mounting table in the substrate processing space and supporting the substrate including grooves having high aspect ratios with a silicon-containing layer disposed thereon; a substrate transfer port at a wall of the substrate processing chamber; a substrate mounting table elevator moving the substrate mounting table upward/downward; an oxygen gas supply system to supply an oxygen-containing gas into the plasma generation space; and an exhaust unit exhausting gas from the substrate processing chamber.

Abstract: A substrate processing apparatus includes a substrate processing chamber including a plasma generation space where a plasma is generated and a substrate processing space where a substrate is placed during a substrate process; an inductive coupling structure outside the plasma generation space wherein a sum of electrical lengths of a coil of the inductive coupling structure and a waveform adjustment circuit connected to the coil is an integer multiple of a wavelength of an applied power; a substrate mounting table in the substrate processing space and supporting the substrate including grooves having high aspect ratios with a silicon-containing layer disposed thereon; a substrate transfer port at a wall of the substrate processing chamber; a substrate mounting table elevator moving the substrate mounting table upward/downward; an oxygen gas supply system to supply an oxygen-containing gas into the plasma generation space; and an exhaust unit exhausting gas from the substrate processing chamber.

Abstract: A processing speed may be easily controlled over the wide range within the impedance variation range.

Abstract: A processing speed may be easily controlled over the wide range within the impedance variation range.

Abstract: It is an object of the present invention to provide a plasma CVD device in which it is possible to inhibit the formation of particles resulting from the adhesion of reaction by-products of poor adhesive strength around the upper electrode.