Patents by Inventor Katsunori Hiramatsu
Katsunori Hiramatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11798968Abstract: The present technology relates to an image pickup device and electronic apparatus that enables suppression of dark current. There are included: a photoelectric conversion unit configured to perform a photoelectric conversion; a trench engraved in a semiconductor substrate; a negative fixed charge film having an oxide film, a nitrogen film, and an oxide film on a side wall of the trench; and an electrode film formed in the fixed charge film. The oxide film configuring the fixed charge film includes silicon monoxide (SiO), and the nitrogen film includes silicon nitride (SiN). The nitrogen film configuring the fixed charge film can also include a polysilicon film or a high dielectric constant film (high-k film). The present technology can be applied to, for example, a back-illuminated CMOS image sensor.Type: GrantFiled: October 26, 2018Date of Patent: October 24, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Katsunori Hiramatsu
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Patent number: 11710753Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.Type: GrantFiled: February 3, 2022Date of Patent: July 25, 2023Assignee: Sony Group CorporationInventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
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Publication number: 20220238590Abstract: An imaging device according to embodiments of the present disclosure includes: a first semiconductor substrate provided with a photoelectric conversion element, floating diffusion that temporarily holds a charge output from the photoelectric conversion element, and a transfer transistor that transfers the charge output from the photoelectric conversion element to the floating diffusion; and a second semiconductor substrate provided on the first semiconductor substrate via a first interlayer insulating film and provided with a readout circuit unit that reads out the charge held in the floating diffusion and outputs a pixel signal.Type: ApplicationFiled: June 17, 2020Publication date: July 28, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Katsunori HIRAMATSU, Shintaro OKAMOTO, Yoshiaki KITANO, Yuya MAEDA, Shinya SATO
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Publication number: 20220165767Abstract: An imaging device according to an embodiment of the present disclosure includes: a first substrate including, in a first semiconductor substrate, a sensor pixel that performs photoelectric conversion; a second substrate including, in a second semiconductor substrate, a readout circuit that outputs a pixel signal based on electric charges outputted from the sensor pixel, the second substrate being stacked on the first substrate; a first insulating layer provided between the first semiconductor substrate and the second semiconductor substrate; and a second insulating layer provided between the first semiconductor substrate and the second semiconductor substrate, and having lower film density than the first insulating layer.Type: ApplicationFiled: February 13, 2020Publication date: May 26, 2022Inventors: NOBUTOSHI FUJII, KATSUNORI HIRAMATSU, KEIICHI NAKAZAWA
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Publication number: 20220157870Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.Type: ApplicationFiled: February 3, 2022Publication date: May 19, 2022Applicant: Sony Group CorporationInventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
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Patent number: 11282881Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.Type: GrantFiled: February 5, 2020Date of Patent: March 22, 2022Assignee: Sony CorporationInventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
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Publication number: 20210343774Abstract: Provided is a solid-state imaging device capable of further improving reliability of a solid-state imaging device and further reducing manufacturing cost. Provided is a solid-state imaging device including a second semiconductor substrate provided with a photoelectric conversion unit and a second element, a second insulating layer, a first semiconductor substrate provided with a first element, and a first insulating layer arranged in this order from a light incident side, and including a groove formed on the first semiconductor substrate, in which the groove has a first side wall and a second side wall, and a part of at least one side wall of the first side wall or the second side wall extends in an oblique direction with respect to a surface of the first semiconductor substrate on the light incident side.Type: ApplicationFiled: October 15, 2019Publication date: November 4, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Katsunori HIRAMATSU
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Patent number: 11018110Abstract: The present technology relates to a semiconductor device, a manufacturing method, and a solid-state imaging device which are capable of suppressing a decrease in bonding strength and preventing a poor electrical connection or peeling when two substrates are bonded to each other. Provided is a semiconductor device, including: a first substrate including a first electrode including a metal; and a second substrate bonded to the first substrate and including a second electrode including a metal. An acute-angled concavo-convex portion is formed on a side surface of a groove in which the first electrode is formed and a side surface of a groove in which the second electrode metal-bonded to the first electrode is formed. The present technology can be, for example, applied to a solid-state imaging device such as a CMOS image sensor.Type: GrantFiled: October 10, 2017Date of Patent: May 25, 2021Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Akiko Hirata, Tadayuki Kimura, Yasufumi Miyoshi, Katsunori Hiramatsu
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Publication number: 20200350345Abstract: The present technology relates to an image pickup device and electronic apparatus that enables suppression of dark current. There are included: a photoelectric conversion unit configured to perform a photoelectric conversion; a trench engraved in a semiconductor substrate; a negative fixed charge film having an oxide film, a nitrogen film, and an oxide film on a side wall of the trench; and an electrode film formed in the fixed charge film, oxide film configuring the fixed charge film includes silicon monoxide (SiO), and the nitrogen film includes silicon nitride (SiN). The nitrogen film configuring the fixed charge film can also include a polysilicon film or a high dielectric constant film (high-k film). The resent technology can be applied to, for example, a back-illuminated CMOS image sensor.Type: ApplicationFiled: October 26, 2018Publication date: November 5, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Katsunori HIRAMATSU
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Publication number: 20200176498Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.Type: ApplicationFiled: February 5, 2020Publication date: June 4, 2020Applicant: Sony CorporationInventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
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Patent number: 10622563Abstract: The present technology relates to a semiconductor device, a solid-state imaging device, an electronic apparatus, and a manufacturing method of the semiconductor device which can suppress generation of residual carriers within an organic film. The semiconductor device includes: a first electrode; a second electrode; and an organic film that is disposed between the first electrode and the second electrode. At least one of the first electrode and the second electrode is discontinuous. The organic film includes an inter-electrode region, which is a region interposed between the first electrode and the second electrode, and a non-inter-electrode region, which is a region not interposed between the first electrode and the second electrode, and the non-inter-electrode region is disposed between the adjacent inter-electrode regions. A suppression region, which is a region in which at least one of generation and movement of a carrier is suppressed, is present within the non-inter-electrode region.Type: GrantFiled: May 6, 2016Date of Patent: April 14, 2020Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Toshihiko Hayashi, Takayoshi Honda, Yuji Uesugi, Katsunori Hiramatsu
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Patent number: 10600836Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.Type: GrantFiled: May 22, 2018Date of Patent: March 24, 2020Assignee: Sony CorporationInventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
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Publication number: 20200035643Abstract: The present technology relates to a semiconductor device, a manufacturing method, and a solid-state imaging device which are capable of suppressing a decrease in bonding strength and preventing a poor electrical connection or peeling when two substrates are bonded to each other. Provided is a semiconductor device, including: a first substrate including a first electrode including a metal; and a second substrate bonded to the first substrate and including a second electrode including a metal. An acute-angled concavo-convex portion is formed on a side surface of a groove in which the first electrode is formed and a side surface of a groove in which the second electrode metal-bonded to the first electrode is formed. The present technology can be, for example, applied to a solid-state imaging device such as a CMOS image sensor.Type: ApplicationFiled: October 10, 2017Publication date: January 30, 2020Inventors: AKIKO HIRATA, TADAYUKI KIMURA, YASUFUMI MIYOSHI, KATSUNORI HIRAMATSU
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Publication number: 20180269246Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.Type: ApplicationFiled: May 22, 2018Publication date: September 20, 2018Applicant: Sony CorporationInventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
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Patent number: 9985064Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.Type: GrantFiled: June 29, 2017Date of Patent: May 29, 2018Assignee: Sony CorporationInventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
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Publication number: 20180114909Abstract: The present technology relates to a semiconductor device, a solid-state imaging device, an electronic apparatus, and a manufacturing method of the semiconductor device which can suppress generation of residual carriers within an organic film. The semiconductor device includes: a first electrode; a second electrode; and an organic film that is disposed between the first electrode and the second electrode. At least one of the first electrode and the second electrode is discontinuous. The organic film includes an inter-electrode region, which is a region interposed between the first electrode and the second electrode, and a non-inter-electrode region, which is a region not interposed between the first electrode and the second electrode, and the non-inter-electrode region is disposed between the adjacent inter-electrode regions. A suppression region, which is a region in which at least one of generation and movement of a carrier is suppressed, is present within the non-inter-electrode region.Type: ApplicationFiled: May 6, 2016Publication date: April 26, 2018Inventors: TOSHIHIKO HAYASHI, TAKAYOSHI HONDA, YUJI UESUGI, KATSUNORI HIRAMATSU
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Publication number: 20170301714Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.Type: ApplicationFiled: June 29, 2017Publication date: October 19, 2017Applicant: Sony CorporationInventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
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Patent number: 9728571Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.Type: GrantFiled: November 18, 2016Date of Patent: August 8, 2017Assignee: Sony CorporationInventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
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Publication number: 20170069669Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.Type: ApplicationFiled: November 18, 2016Publication date: March 9, 2017Applicant: Sony CorporationInventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
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Patent number: 9536919Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.Type: GrantFiled: July 6, 2016Date of Patent: January 3, 2017Assignee: Sony CorporationInventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi