Abstract: A blood pressure measurement device having an attach portion including: an opening portion provided at a position opposite a region where one artery of a wrist is found and an end surface that curves conforming to a shape in a circumferential direction of a portion of the wrist; a fastener on the attach portion; and a sensing body including: a sensor unit opposite the opening portion, the sensor unit including a sensor module that comes into contact with the region where the one artery of the wrist is found and an air bag that presses the sensor module toward the wrist by expanding when the device is worn on the wrist, a case that houses the sensor module to allow the sensor module to move in one direction with respect to the opening portion, and a biasing member that biases the sensor module in a direction away from the wrist.

Abstract: Provided is a sensor module, a method for manufacturing a sensor module, and a blood pressure measurement device with a highly smooth surface and high sensor accuracy. A sensor module 63 includes: a pressure sensor portion 71; a sensor base 72 including a support wall portion 72a with flow holes 72d to 72g formed extending through the support wall portion 72a from one main surface side to the other main surface side, the pressure sensor portion 71 being disposed on the one main surface side of the sensor base 72; a sensor head cover 73 including an opening 73a at a position opposite a sensor 71a and disposed on the one main surface side of the support wall portion 72a of the sensor base 72 with a gap 79 that communicates with the flow holes 72d to 72g and the opening 73a formed therebetween; and a soft portion 74 disposed in the opening 73a that covers the pressure sensor portion 71.

Abstract: A semiconductor device includes first and second trenches, and a first layer provided therebetween, in a principal surface of a semiconductor substrate, a second layer in contact with and sandwiching the first trench with the first layer, a third layer provided under the second layer and in contact with the second layer and the first trench, a fourth layer provided under and in contact with the third layer but separated from the first trench, and a fifth layer provided in the principal surface and sandwiching the second trench with the first layer. The second and fourth layers are semiconductors of a first conductivity type, and the first, third, and fifth layers are semiconductors of a second conductivity type. A gate trench electrode is provided inside the first trench via the insulating film, and an emitter trench electrode is provided inside the second trench via the insulating film.

Abstract: A semiconductor device includes first and second trenches, and a first layer provided therebetween, in a principal surface of a semiconductor substrate, a second layer in contact with and sandwiching the first trench with the first layer, a third layer provided under the second layer and in contact with the second layer and the first trench, a fourth layer provided under and in contact with the third layer but separated from the first trench, and a fifth layer provided in the principal surface and sandwiching the second trench with the first layer. The second and fourth layers are semiconductors of a first conductivity type, and the first, third, and fifth layers are semiconductors of a second conductivity type. A gate trench electrode is provided inside the first trench via the insulating film, and an emitter trench electrode is provided inside the second trench via the insulating film.

Abstract: A semiconductor device includes first and second trenches, and a first layer provided therebetween, in a principal surface of a semiconductor substrate, a second layer in contact with and sandwiching the first trench with the first layer, a third layer provided under the second layer and in contact with the second layer and the first trench, a fourth layer provided under and in contact with the third layer but separated from the first trench, and a fifth layer provided in the principal surface and sandwiching the second trench with the first layer. The second and fourth layers are semiconductors of a first conductivity type, and the first, third, and fifth layers are semiconductors of a second conductivity type. A gate trench electrode is provided inside the first trench via the insulating film, and an emitter trench electrode is provided inside the second trench via the insulating film.

Abstract: A sphygmomanometer of the present invention is a sphygmomanometer having an automatic blood pressure measurement mode for automatically starting blood pressure measurement according to a predetermined schedule. The sphygmomanometer includes a sphygmomanometer main body configured to be mounted on a measured part and a plurality of operation units to which instructions different from each other are input, the operation units being provided on the sphygmomanometer main body. The operation unit includes an automatic blood pressure measurement mode operation unit to which an automatic blood pressure measurement mode instruction is input for switching a mode to the automatic blood pressure measurement mode. The sphygmomanometer includes a restriction unit that restricts a function of the operation unit when the sphygmomanometer is set in the automatic blood pressure measurement mode as a result of the automatic blood pressure measurement mode operation unit being operated.

Abstract: A semiconductor device includes first and second trenches, and a first layer provided therebetween, in a principal surface of a semiconductor substrate, a second layer in contact with and sandwiching the first trench with the first layer, a third layer provided under the second layer and in contact with the second layer and the first trench, a fourth layer provided under and in contact with the third layer but separated from the first trench, and a fifth layer provided in the principal surface and sandwiching the second trench with the first layer. The second and fourth layers are semiconductors of a first conductivity type, and the first, third, and fifth layers are semiconductors of a second conductivity type. A gate trench electrode is provided inside the first trench via the insulating film, and an emitter trench electrode is provided inside the second trench via the insulating film.

Abstract: A pressure pulse wave measurement apparatus includes: a sensor unit in which an element column including a plurality of pressure detection elements that are arranged side by side in one direction is formed; a pressing unit configured to press the sensor unit against a body surface of a living body; and a rotation control member configured to rotate the sensor unit about each of two axes that are orthogonal to a pressing direction of the pressing unit. The rotation control member includes a first member and a second member that are relatively rotated about a rotation axis extending in the pressing direction, and the first member and the second member both include a motion conversion mechanism for converting a rotational motion realized by the first member and the second member being relatively rotated, into a rotational motion of the sensor unit about each of the two axes.

Abstract: A pressure pulse wave measurement apparatus includes: a sensor unit; a pressing unit configured to press the sensor unit; and a rotation control member configured to rotate the sensor unit about each of two axes orthogonal to a pressing direction of the pressing unit. The rotation control member includes a first member, a first rotation member and a second rotation member. The first member and the first rotation member both include a first motion conversion mechanism for converting a rotational motion realized by the first rotation member being rotated, into a rotational motion of the sensor unit about one of the two axes, and the first member and the second rotation member both include a second motion conversion mechanism for converting a rotational motion realized by the second rotation member being rotated, into a rotational motion of the sensor unit about the other of the two axes.

Abstract: Provided is a sensor module, a method for manufacturing a sensor module, and a blood pressure measurement device with a highly smooth surface and high sensor accuracy. A sensor module 63 includes: a pressure sensor portion 71; a sensor base 72 including a support wall portion 72a with flow holes 72d to 72g formed extending through the support wall portion 72a from one main surface side to the other main surface side, the pressure sensor portion 71 being disposed on the one main surface side of the sensor base 72; a sensor head cover 73 including an opening 73a at a position opposite a sensor 71a and disposed on the one main surface side of the support wall portion 72a of the sensor base 72 with a gap 79 that communicates with the flow holes 72d to 72g and the opening 73a formed therebetween; and a soft portion 74 disposed in the opening 73a that covers the pressure sensor portion 71.

Abstract: A blood pressure measurement device having an attach portion including: an opening portion provided at a position opposite a region where one artery of a wrist is found and an end surface that curves conforming to a shape in a circumferential direction of a portion of the wrist; a fastener on the attach portion; and a sensing body including: a sensor unit opposite the opening portion, the sensor unit including a sensor module that comes into contact with the region where the one artery of the wrist is found and an air bag that presses the sensor module toward the wrist by expanding when the device is worn on the wrist, a case that houses the sensor module to allow the sensor module to move in one direction with respect to the opening portion, and a biasing member that biases the sensor module in a direction away from the wrist.

Abstract: A toothbrush including a main body having a shape which is narrow and long in one direction; and a brush member which has a cylindrical shape and which is mounted to an end section in the lengthwise direction of the main body. The brush member includes: a head part which has a raised surface, on which bristles are erected, along the lengthwise direction of the main body to which the brush member is mounted; and a neck part which is mounted by engaging with the periphery of the end section of the main body. In the head part, a back surface on the opposite side of the raised surface is opened, and the neck part is provided with a detachment prevention mechanism that prevents the end of the main body to which the brush member is mounted from detaching.

Abstract: According to one embodiment, a biological information measuring apparatus includes a detector, a measuring device, and a connector. The detector detects a pulse wave in a temporally continuous manner. The measuring device intermittently measures biological information and calibrate the pulse wave with the biological information. The connector having impact absorbability physically connects and integrates the detector and the measuring device.

Abstract: A toothbrush including a main body having a shape which is narrow and long in one direction; and a brush member which has a cylindrical shape and which is mounted to an end section in the lengthwise direction of the main body. The brush member includes: a head part which has a raised surface, on which bristles are erected, along the lengthwise direction of the main body to which the brush member is mounted; and a neck part which is mounted by engaging with the periphery of the end section of the main body. In the head part, a back surface on the opposite side of the raised surface is opened, and the neck part is provided with a detachment prevention mechanism that prevents the end of the main body to which the brush member is mounted from detaching.

Abstract: A pressure pulse wave measurement apparatus includes: a sensor unit in which an element column including a plurality of pressure detection elements that are arranged side by side in one direction is formed; a pressing unit configured to press the sensor unit against a body surface of a living body; and a rotation control member configured to rotate the sensor unit about each of two axes that are orthogonal to a pressing direction of the pressing unit. The rotation control member includes a first member and a second member that are relatively rotated about a rotation axis extending in the pressing direction, and the first member and the second member both include a motion conversion mechanism for converting a rotational motion realized by the first member and the second member being relatively rotated, into a rotational motion of the sensor unit about each of the two axes.

Abstract: A pressure pulse wave measurement apparatus includes: a sensor unit; a pressing unit configured to press the sensor unit; and a rotation control member configured to rotate the sensor unit about each of two axes orthogonal to a pressing direction of the pressing unit. The rotation control member includes a first member, a fast rotation member and a second rotation member. The first member and the first rotation member both include a first motion conversion mechanism for converting a rotational motion realized by the first rotation member being rotated, into a rotational motion of the sensor unit about one of the two axes, and the first member and the second rotation member both include a second motion conversion mechanism for converting a rotational motion realized by the second rotation member being rotated, into a rotational motion of the sensor unit about the other of the two axes.

Abstract: Provided is a sensor having a high sensitivity and a high degree of freedom of layout by reducing constrictions of the channel shape, the reaction field area, and the position. Provided is also a method for manufacturing the sensor. The sensor (10) includes: a source electrode (15), a drain electrode, (14), and a gate electrode (13) arranged on silicon oxide film (12a, 12b); a channel (16) arranged on the silicon oxide films (12a, 12b) and electrically connected to the source electrode (15) and the drain electrode (14); and a reaction field (20) arranged on the silicon oxide films (12a, 12b). The reaction field (20) is formed at a position on the silicon oxide film (12a), the position being different from a position for the channel (16). With this configuration, it is possible to independently select the shape of the channel (16) and the area of the reaction field (20). This enables the sensor (10) to have a high measurement sensitivity and a high degree of freedom of layout.

Abstract: Disclosed is a carbon nanotube field effect transistor which stably exhibits excellent electrical conduction properties. Also disclosed are a method for manufacturing the carbon nanotube field effect transistor, and a biosensor comprising the carbon nanotube field effect transistor. First of all, an silicon oxide film is formed on a contact region of a silicon substrate by an LOCOS method. Next, an insulating film, which is thinner than the silicon oxide film on the contact region, is formed on a channel region of the silicon substrate. Then, after arranging a carbon nanotube, which forms a channel, on the silicon substrate, the carbon nanotube is covered with a protective film. Finally, a source electrode and a drain electrode are formed, and the source electrode and the drain electrode are electrically connected to the carbon nanotube, respectively.

Abstract: Provided is a carbon nanotube field effect transistor manufacturing method wherein carbon nanotube field effect transistors having excellent stable electric conduction property are manufactured with excellent reproducibility. After arranging carbon nanotubes to be a channel on a substrate, the carbon nanotubes are covered with an insulating protection film. Then, a source electrode and a drain electrode are formed on the insulating protection film. At this time, a contact hole is formed on the protection film, and the carbon nanotubes are connected with the source electrode and the drain electrode. Then, a wiring protection film, a conductive film and a plasma CVD film are sequentially formed on the insulating protection film, the source electrode and the drain electrode. In the field effect transistor thus manufactured, since the carbon nanotubes to be the channel are not contaminated and not damaged, excellent stable electric conductive property is exhibited.

Abstract: A semiconductor device manufacturing method is a method of forming a semiconductor device that includes a cell part that includes plural transistor cells in each of which a gate of a trench type is formed in a semiconductor layer, and diffused layers are formed on both sides of the gate, and a guard ring part that surrounds the cell part. The semiconductor device manufacturing method includes forming an interlayer dielectric film on a surface of the semiconductor layer in which the gate and the diffused layers are formed; reducing a thickness of the interlayer dielectric film formed in the cell part through etch back; forming a contact part having a shape of a hole or a groove in the interlayer dielectric film at a position above the diffused layer; and forming a metal film on the interlayer dialectic film.