Abstract: Provided is a rubber composition for a hose inner tube that can achieve excellent inner tube peeling resistance, even when cobalt compounds are not present or are contained in small amounts. To this end, a rubber composition for a hose inner tube of the present disclosure includes a rubber component A) containing acrylonitrile butadiene rubber, sulfur B), a sulfenamide vulcanization accelerator C), and a bismaleimide compound D) represented by general formula (I), and further includes a cobalt compound E) as an optional component.

Abstract: In a method for manufacturing a III-V nitride compound semiconductor light emitting element, light emitting element regions (21) are formed in a low dislocation region on the III-V nitride compound semiconductor substrate wherein high density dislocation sections (22) and low dislocation regions are alternately arranged repeatedly, so that stripe-shaped light emitting regions are in parallel to the direction wherein the high density dislocation sections (22) extend, and then the substrate is broken, after making two scribe lines (23) to have the high density dislocation section (22) in between, on a plane (25) on the opposite side to a plane (24) whereupon the element regions (21) are formed. Thus, chips are separated and the high density dislocation sections (22) can be removed. The pitch of the two scribe lines is preferably 100 ?m or more.

Abstract: In a method for manufacturing a III-V nitride compound semiconductor light emitting element, light emitting element regions (21) are formed in a low dislocation region on the III-V nitride compound semiconductor substrate wherein high density dislocation sections (22) and low dislocation regions are alternately arranged repeatedly, so that stripe-shaped light emitting regions are in parallel to the direction wherein the high density dislocation sections (22) extend, and then the substrate is broken, after making two scribe lines (23) to have the high density dislocation section (22) in between, on a plane (25) on the opposite side to a plane (24) whereupon the element regions (21) are formed. Thus, chips are separated and the high density dislocation sections (22) can be removed. The pitch of the two scribe lines is preferably 100 ?m or more.