Patents by Inventor Katsunori Mitsuhashi
Katsunori Mitsuhashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230241357Abstract: An inlet passage portion, which is a substantially columnar space through which a tip end of a guide wire is inserted into an opening portion to pass the guide wire, a shaping portion, which is a space communicating with the inlet passage portion through an outlet portion, which is a portion located at a deepest part of the inlet passage portion, and flatly expanding from the outlet portion, an annular inner wall, which forms an inner circumferential portion of the shaping portion, an extension line intersection portion, which is an inner wall intersecting an extension line of a center line of the inlet passage portion at an obtuse angle, and an obtuse angle side inner wall portion, which is an inner wall extending from the outlet portion to the extension line intersection portion and forming an obtuse angle with the extension line are included.Type: ApplicationFiled: January 17, 2023Publication date: August 3, 2023Inventors: Yuki ISHIBASHI, Yoshihiro AKASHI, Haruhiko YAMASAKI, Katsunori MITSUHASHI, Yoshiro MORISHITA
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Publication number: 20220347438Abstract: To provide a guide wire shaping mold that reduces damage to a blood vessel by folding back a tip end of the guide wire and do not require heating treatment, and a guide wire shaping method using the guide wire shaping mold. A guide wire shaping mold configured to shaping by reducing an annular diameter of the guide wire in which a tip end is annularly arranged, the guide wire shaping mold includes a wire shaping portion configured such that an annular portion of the guide wire is arranged, and a wire drawing path formed in a passage way shape, communicating with the wire shaping portion, and configured to retract the guide wire in a linear direction and in a base end direction.Type: ApplicationFiled: July 17, 2020Publication date: November 3, 2022Inventors: Yuki ISHIBASHI, Yoshihiro AKASHI, Haruhiko YAMASAKI, Katsunori MITSUHASHI, Yoshiro MORISHITA
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Patent number: 10765451Abstract: A retractor holds a surgical incision in a body in an opened state to ensure a surgical field in small-incision endoscopic surgery, and includes a base body that is a thin plate made of tin having a purity of not less than 99.9% and has an elongated rectangular shape in an extended state of the base body. The retractor, in an extended form in a rectangular shape or in a rounded form in a small shape, can be inserted from a small incision wound into the body, and can easily be delivered to the surgical incision in the body by a surgical instrument. The base body is bent and deformed into a desired shape by the surgical instrument and is applied to the surgical incision in the body, so that the surgical incision can be held in an opened state so as to ensure the surgical field.Type: GrantFiled: July 21, 2017Date of Patent: September 8, 2020Assignees: OSAKA CITY UNIVERSITY, OZK CO., LTD., SHINWA SYOJI CO., LTD.Inventors: Toshihiko Shibata, Haruhiko Yamasaki, Katsunori Mitsuhashi, Yoshiro Morishita
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Publication number: 20190269393Abstract: This retractor easily ensures a surgical field as desired by an operator, can flexibly ensure and change the surgical field in accordance with the surgical site and the surgical situation, and can easily be moved to a desired position in the surgical site and taken out after the surgery. A retractor 1 holds a surgical incision in a body in an opened state to ensure a surgical field in small-incision endoscopic surgery, and includes a base body 2 that is a thin plate made of tin having a purity of not less than 99.9% and has an elongated rectangular shape in an extended state of the base body. The retractor 1, in an extended form in a rectangular shape or in a rounded form in a small shape, can be inserted from a small incision wound into the body, and can easily be delivered to the surgical incision in the body by a surgical instrument.Type: ApplicationFiled: July 21, 2017Publication date: September 5, 2019Applicants: OSAKA CITY UNIVERSITY, OZK CO., LTD., SHINWA SYOJI CO., LTD.Inventors: Toshihiko SHIBATA, Haruhiko YAMASAKI, Katsunori MITSUHASHI, Yoshiro MORISHITA
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Patent number: 10335132Abstract: Provided is a retractor that makes it possible to reduce operation costs, is less likely to cause damage to surgical incision sites, do not reduce workability, and also makes it possible to easily maintain the desired surgical field and to change the surgical field or widen or narrow the area of the surgical field, depending on the surgical situation. The retractor 1 for holding a surgical incision open and maintaining a surgical field during an operation includes a belt-shaped body A made of a wire; and a connecting part B that is provided at one end portion of the belt-shaped body A and capable of being connected to another end portion or an intermediate portion of the belt-shaped body A so that the belt-shaped body A can be formed into a loop of a desired size.Type: GrantFiled: October 14, 2015Date of Patent: July 2, 2019Assignees: NATIONAL HOSPITAL ORGANIZATION, OZK CO., LTD., SHINWA SYOJI CO., LTD.Inventors: Kenjiro Aogi, Haruhiko Yamasaki, Katsunori Mitsuhashi, Yoshiro Morishita
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Publication number: 20180000474Abstract: Provided is a retractor that makes it possible to reduce operation costs, is less likely to cause damage to surgical incision sites, do not reduce workability, and also makes it possible to easily maintain the desired surgical field and to change the surgical field or widen or narrow the area of the surgical field, depending on the surgical situation. The retractor 1 for holding a surgical incision open and maintaining a surgical field during an operation includes a belt-shaped body A made of a wire; and a connecting part B that is provided at one end portion of the belt-shaped body A and capable of being connected to another end portion or an intermediate portion of the belt-shaped body A so that the belt-shaped body A can be formed into a loop of a desired size.Type: ApplicationFiled: October 14, 2015Publication date: January 4, 2018Applicants: National Hospital Organization, OZK CO., LTD., Shinwa Syoji CO., LTD.Inventors: Kenjiro AOGI, Haruhiko YAMASAKI, Katsunori MITSUHASHI, Yoshiro MORISHITA
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Patent number: 9263705Abstract: A successive deposition apparatus by which a reduction in the luminous efficiency of a light-emitting element can be suppressed even in high-speed deposition of a light-emitting layer thereof is provided. The apparatus includes: a second deposition chamber; a third deposition chamber coupled to the second deposition chamber; a transfer unit for transferring a substrate from second deposition chamber to third deposition chamber; plural third deposition sources arranged in the substrate transfer direction in the second deposition chamber; and a fourth and fifth deposition sources alternately arranged in the transfer direction in the third deposition chamber. In the third deposition chamber, the fourth deposition source is placed nearest to the second deposition source. The fourth deposition source contains a host material, and the fifth deposition source contains a dopant material. The HOMO level of a material of the third deposition source is adjusted to that of the host material.Type: GrantFiled: March 13, 2012Date of Patent: February 16, 2016Assignees: Semiconductor Energy Laboratory Co., Ltd., Sharp Kabushiki KaishaInventors: Satoshi Seo, Hisao Ikeda, Manabu Niboshi, Katsunori Mitsuhashi, Seiichi Mitsui, Yoshitaka Yamamoto
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Patent number: 9051840Abstract: The invention relates to wall of a turbo machine having a cascade of blades. The wall includes: a first platform facing a first passage between blades in the cascade of blades; and a second platform facing a second passage between adjacent cascade of blades on an upstream side and cascade of blades on a downstream side, and having a circumferential outline having a distribution of radial positions. According to the invention, loss due to disturbance of flow through the gap of axially adjacent walls can be reduced.Type: GrantFiled: March 28, 2008Date of Patent: June 9, 2015Assignees: IHI CORPORATION, THE SOCIETY OF JAPANESE AEROSPACE COMPANIESInventors: Katsunori Mitsuhashi, Akira Takahashi, Hiroshi Hamazaki, Ruriko Yamawaki
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Publication number: 20120237669Abstract: A successive deposition apparatus by which a reduction in the luminous efficiency of a light-emitting element can be suppressed even in high-speed deposition of a light-emitting layer thereof is provided. The apparatus includes: a second deposition chamber; a third deposition chamber coupled to the second deposition chamber; a transfer unit for transferring a substrate from second deposition chamber to third deposition chamber; plural third deposition sources arranged in the substrate transfer direction in the second deposition chamber; and a fourth and fifth deposition sources alternately arranged in the transfer direction in the third deposition chamber. In the third deposition chamber, the fourth deposition source is placed nearest to the second deposition source. The fourth deposition source contains a host material, and the fifth deposition source contains a dopant material. The HOMO level of a material of the third deposition source is adjusted to that of the host material.Type: ApplicationFiled: March 13, 2012Publication date: September 20, 2012Inventors: Satoshi SEO, Hisao IKEDA, Manabu NIBOSHI, Katsunori MITSUHASHI, Seiichi MITSUI, Yoshitaka YAMAMOTO
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Patent number: 7982272Abstract: A thin-film semiconductor device including a transparent insulating substrate, an island semiconductor layer formed on the transparent insulating substrate and including a source region containing a first-conductivity-type impurity and a drain region containing a first-conductivity-type impurity and spaced apart from the source region, a gate insulating film and a gate electrode which are formed on a portion of the island semiconductor layer, which is located between the source region and the drain region, a sidewall spacer having a 3-ply structure including a first oxide film, a nitride film and a second oxide film, which are respectively formed on a sidewall of the gate electrode, and an interlayer insulating film covering the island semiconductor layer and the gate electrode.Type: GrantFiled: March 17, 2009Date of Patent: July 19, 2011Assignee: Advanced LCD Technologies Development Center Co., Ltd.Inventors: Katsunori Mitsuhashi, Tetsuya Ide
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Publication number: 20100172749Abstract: The invention relates to wall of a turbo machine having a cascade of blades. The wall includes: a first platform facing a first passage between blades in the cascade of blades; and a second platform facing a second passage between adjacent cascade of blades on an upstream side and cascade of blades on a downstream side, and having a circumferential outline having a distribution of radial positions. According to the invention, loss due to disturbance of flow through the gap of axially adjacent walls can be reduced.Type: ApplicationFiled: March 28, 2008Publication date: July 8, 2010Inventors: Katsunori Mitsuhashi, Akira Takahashi, Hiroshi Hamazaki, Ruriko Yamawaki
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Patent number: 7670885Abstract: A method of manufacturing a thin-film semiconductor device, including forming a crystallized region on a transparent insulating substrate, implanting an impurity into the crystallized region and an amorphous semiconductor layer to form a source diffusion region and a drain diffusion region in the crystallized region, subjecting the resultant structure to heat treatment, thereby not only activating the impurity implanted in the crystallized region and the amorphous semiconductor layer but also restoring crystallinity of only a portion of the amorphous semiconductor layer which is formed on the crystallized region to thereby turn the portion into a polycrystalline semiconductor layer, and subjecting the resultant surface to selective etching to thereby leave only the polycrystalline semiconductor layer and to remove the amorphous semiconductor layer formed on other regions, thereby forming, in a self-aligned manner, a stacked source diffusion layer and a stacked drain diffusion layer.Type: GrantFiled: February 5, 2009Date of Patent: March 2, 2010Assignee: Advanced LCD Technologies Development Center Co., Ltd.Inventor: Katsunori Mitsuhashi
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Publication number: 20090242891Abstract: A thin-film semiconductor device including a transparent insulating substrate, an island semiconductor layer formed on the transparent insulating substrate and including a source region containing a first-conductivity-type impurity and a drain region containing a first-conductivity-type impurity and spaced apart from the source region, a gate insulating film and a gate electrode which are formed on a portion of the island semiconductor layer, which is located between the source region and the drain region, a sidewall spacer having a 3-ply structure including a first oxide film, a nitride film and a second oxide film, which are respectively formed on a sidewall of the gate electrode, and an interlayer insulating film covering the island semiconductor layer and the gate electrode.Type: ApplicationFiled: March 17, 2009Publication date: October 1, 2009Inventors: Katsunori Mitsuhashi, Tetsuya Ide
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Publication number: 20090203177Abstract: A method of manufacturing a thin-film semiconductor device, including forming a crystallized region on a transparent insulating substrate, implanting an impurity into the crystallized region and an amorphous semiconductor layer to form a source diffusion region and a drain diffusion region in the crystallized region, subjecting the resultant structure to heat treatment, thereby not only activating the impurity implanted in the crystallized region and the amorphous semiconductor layer but also restoring crystallinity of only a portion of the amorphous semiconductor layer which is formed on the crystallized region to thereby turn the portion into a polycrystalline semiconductor layer, and subjecting the resultant surface to selective etching to thereby leave only the polycrystalline semiconductor layer and to remove the amorphous semiconductor layer formed on other regions, thereby forming, in a self-aligned manner, a stacked source diffusion layer and a stacked drain diffusion layer.Type: ApplicationFiled: February 5, 2009Publication date: August 13, 2009Inventor: Katsunori MITSUHASHI
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Patent number: D709667Type: GrantFiled: October 31, 2013Date of Patent: July 29, 2014Assignee: OZK Co., Ltd.Inventors: Haruhiko Yamasaki, Naomi Hamazaki, Katsunori Mitsuhashi
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Patent number: D790694Type: GrantFiled: August 20, 2015Date of Patent: June 27, 2017Assignees: NATIONAL HOSPITAL ORGANIZATION, OZK CO., LTD., SHINWA SYOJI CO., LTD.Inventors: Kenjiro Aogi, Haruhiko Yamasaki, Katsunori Mitsuhashi, Yoshiro Morishita
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Patent number: D819810Type: GrantFiled: January 25, 2017Date of Patent: June 5, 2018Assignees: OSAKA CITY UNIVERSITY, OZK CO., LTD., SHINWA SYOJI CO., LTD.Inventors: Toshihiko Shibata, Haruhiko Yamasaki, Katsunori Mitsuhashi, Yoshiro Morishita
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Patent number: D821577Type: GrantFiled: January 25, 2017Date of Patent: June 26, 2018Assignees: OSAKA CITY UNIVERSITY, OZK CO., LTD., SHINWA SYOJI CO., LTD.Inventors: Toshihiko Shibata, Haruhiko Yamasaki, Katsunori Mitsuhashi, Yoshiro Morishita