Patents by Inventor Katsunori Shinone

Katsunori Shinone has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor laser attaining high efficiency and high power, and method of manufacturing the same
    Patent number: 6697407
    Abstract: An n-type semiconductor substrate has a (100) crystal plane as an upper surface. A mesa stripe portion has a trapezoidal shape including an n-type first clad layer, an active layer and a p-type second clad layer sequentially stacked on the substrate and formed along a <011> direction. A current block portion has a p-type current blocking layer and an n-type current blocking layer. A p-type third clad layer simultaneously covers both the upper surfaces of the mesa stripe portion and the current blocking portion. The inclination angle as being acute angle of the side surface of the mesa stripe portion is close to the inclination angle of a (111)B crystal plane with respect to the (100) crystal plane and set at one of an angle larger than and an angle smaller than the inclination angle of the (111)B crystal plane.
    Type: Grant
    Filed: February 1, 2002
    Date of Patent: February 24, 2004
    Assignee: Anritsu Corporation
    Inventors: Yasuaki Nagashima, Katsunori Shinone, Tomoyuki Kikugawa
  • Semiconductor laser attaining high efficiency and high power, and method of manufacturing the same
    Publication number: 20020118717
    Abstract: An n-type semiconductor substrate has a (100) crystal plane as an upper surface. A mesa stripe portion has a trapezoidal shape including an n-type first clad layer, an active layer and a p-type second clad layer sequentially stacked on the substrate and formed along a <011> direction. A current block portion has a p-type current blocking layer and an n-type current blocking layer. A p-type third clad layer simultaneously covers both the upper surfaces of the mesa stripe portion and the current blocking portion. The inclination angle as being acute angle of the side surface of the mesa stripe portion is close to the inclination angle of a (111)B crystal plane with respect to the (100) crystal plane and set at one of an angle larger than and an angle smaller than the inclination angle of the (111)B crystal plane.
    Type: Application
    Filed: February 1, 2002
    Publication date: August 29, 2002
    Applicant: Anritsu Corporation
    Inventors: Yasuaki Nagashima, Katsunori Shinone, Tomoyuki Kikugawa