Patents by Inventor Katsuo Abe

Katsuo Abe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5723198
    Abstract: In a magnetic recording system including magnetic recording media, a rotation driving unit for driving these magnetic recording media, read/write magnetic heads, driving apparatus for driving these read/write magnetic heads, and a read/write signal processing apparatus, a reading portion of the respective magnetic heads is arranged by a magnetoresistive head. The magnetic recording media are constructed of multi-layered magnetic media having a plurality of magnetic layers fabricated directly, or via underlayers on a non-magnetic disk substrate, and of non-magnetic intermediate layers arranged among these non-magnetic layers.
    Type: Grant
    Filed: June 13, 1994
    Date of Patent: March 3, 1998
    Assignee: Hitachi, Ltd.
    Inventors: Yuzuru Hosoe, Yoshihiro Shiroishi, Akira Ishikawa, Futoshi Tomiyama, Kazuetsu Yoshida, Tomoo Yamamoto, Yotsuo Yahisa, Akira Osaki, Katsuo Abe, Shinji Narishige, Naoki Kodama, Kiwamu Tanahashi, Emi Mangyo
  • Patent number: 5651867
    Abstract: A plasma processing apparatus comprising: a vacuum container; an evacuation means for keeping the interior of the vacuum container at a pressure not higher than atmospheric pressure; a substrate support device for supporting a substrate to be subjected to plasma processing; an electrode for generating plasma in cooperation with the substrate support; a voltage supply for applying a voltage to the electrode; a gas introducing system for introducing a gaseous material into a space where the plasma is produced; a surrounding member for enclosing the space above the substrate support, and a drive for relatively moving the surrounding member to space an end of the surrounding member proximate from the substrate from at least one of the substrate support and the substrate supported thereon by a distance which is short enough to suppress plasma leakage during the plasma processing and to position the end of the surrounding member away from said at least one of the substrate support and the substrate thereon for char
    Type: Grant
    Filed: October 2, 1990
    Date of Patent: July 29, 1997
    Assignee: Hitachi, Ltd.
    Inventors: Yuichi Kokaku, Hiroyuki Kataoka, Makoto Kitoh, Shigehiko Fujimaki, Satoshi Matsunuma, Kenji Furusawa, Nobuo Nakagawa, Katsuo Abe, Masaaki Hayashi
  • Patent number: 5587235
    Abstract: A magnetic recording medium and magnetic recording apparatus which can provide a high output level and a low noise level are disclosed. A magnetic recording medium includes a multilayer structure of magnetic alloy thin films containing Co, and at least one paramagnetic intermediate region or oxygen-rich region disposed between the magnetic layers. The intermediate region reduces the magnetic interaction between the magnetic layers without the degradation of crystallinity of the magnetic layers. As a result, a magnetic recording medium having such a structure shows low noise performance and a high recording density.
    Type: Grant
    Filed: February 8, 1994
    Date of Patent: December 24, 1996
    Assignee: Hitachi, Ltd.
    Inventors: Hiroyuki Suzuki, Naoki Kodama, Takao Yonekawa, Tokuho Takagaki, Naoto Endo, Katsuo Abe, Tsuneo Suganuma
  • Patent number: 5500296
    Abstract: The present invention provides a magnetic recording medium wherein the surface layer of the protective film of the medium is irradiated by ions to give a protective film having high reliability in resistance to sliding with the magnetic head, a process for producing the medium, an apparatus for producing the medium, and a magnetic recording apparatus having the medium mounted therein. The essentials of the present invention lie in introducing a minute surface roughness of atomic order in the surface of the protective film 5 constituting the outermost layer of a magnetic recording medium by irradiating atoms accelerated by high voltage (that is, by implanting ions) to the surface.
    Type: Grant
    Filed: January 21, 1994
    Date of Patent: March 19, 1996
    Assignee: Hitachi, Ltd.
    Inventors: Youichi Inoue, Yoshihiro Sato, Shinichi Hirose, Hiroshi Tani, Katsuyuki Tanaka, Katsuo Abe, Masaki Ohura, Muneo Mizumoto
  • Patent number: 4950548
    Abstract: The present invention relates to a magnetic recording medium for a magnetic disk unit or the like and, more particularly, to a magnetic recording medium having its recording layer made of a magnetic alloy film with uniform magnetic characteristics. The present magnetic recording medium comprises a non-magnetic substrate, at least two sputtered layers of chromium thin film having a bow-like columnar structure which chromium thin film is laminated on the substrate, another sputtered layer of a magnetic alloy thin film laminated on the chromium thin film, and a protective layer laminated on the magnetic alloy thin film. The present invention is effective in reducing modulation of regenerative output relatively independent of a texture roughness of the substrate.
    Type: Grant
    Filed: May 23, 1989
    Date of Patent: August 21, 1990
    Assignee: Hitachi, Ltd.
    Inventors: Kenji Furusawa, Katsuo Abe, Hiroyuki Kataoka, Tokuho Takagaki, Yoshihiro Shiroishi, Norikazu Tsumita
  • Patent number: 4724060
    Abstract: A target for use in a sputtering technique usually has a flat structure. The present invention has succeeded in endowing sputtering film formation with a directivity in such a way that the surface of the target is provided with recesses thereby to limit the flight directions of sputtering particles.Alternatively, the directivity can be bestowed by disposing a frame between a substrate to be formed with a film and the flat sputtering target. This measure requires auxiliary means in which a wall is provided at the outer periphery of the sputtering target so as to effectively utilize a plasma.The present invention actually formed films by the use of the above technique, and has verified the effect thereof. Wide applications are expected in technical fields wherein after forming a microscopic pattern, one or more films need to be further formed.
    Type: Grant
    Filed: November 14, 1985
    Date of Patent: February 9, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Masao Sakata, Hideaki Shimamura, Shigeru Kobayashi, Tsuneyoshi Kawahito, Tsuneaki Kamei, Katsuo Abe
  • Patent number: 4610774
    Abstract: A sputtering target structure suitable for use with a planar magnetron sputtering electrode device has a plurality of annular target members arranged concentrically. The annular target member is provided with either an annular groove for concentration of an electric field or an annular wall for repelling electrons.
    Type: Grant
    Filed: November 14, 1985
    Date of Patent: September 9, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Masao Sakata, Shigeru Kobayashi, Katsuo Abe, Hideaki Shimamura, Tsuneaki Kamei, Osamu Kasahara, Hidetsugu Ogishi, Takeshi Oyamada
  • Patent number: 4606802
    Abstract: Planar magnetron sputtering sputters a target formed of plural target members from their principal surface. The plural target members are arranged on an electrode. The sputtering is carried out in such a condition that an electric field and magnetic field are substantially parallel in their direction at the boundary regions among the plural target members.
    Type: Grant
    Filed: December 18, 1984
    Date of Patent: August 19, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Shigeru Kobayashi, Katsuo Abe, Masao Sakata, Osamu Kasahara, Hidetsugu Ogishi
  • Patent number: 4517444
    Abstract: Disclosed is a thermal printhead made of an insulating substrate, and a heat generating resistor layer formed on the substrate, and wherein the heat generating resistor layer is supplied with electric current. The heat generating resistor layer is made of Cr-Si-SiO alloy, and with the Cr, Si and SiO contents falling within a region defined by points A, B, C and D in a triangular diagram, where the points A, B, C and D are determined as follows:______________________________________ Cr (mol %) (Si (mol %) SiO (mol %) ______________________________________ A 79.4 2.1 18.5 B 58.6 40.9 0.5 C 10.1 89.4 0.5 D 24.4 3.7 71.9.
    Type: Grant
    Filed: January 20, 1984
    Date of Patent: May 14, 1985
    Assignee: Hitachi, Ltd.
    Inventors: Tsuneyoshi Kawahito, Katsuo Abe, Tsuneaki Kamei, Kazuyuki Fujimoto, Masao Mitani, Shigetoshi Hiratsuka
  • Patent number: 4460494
    Abstract: Disclosed is a resistor made of an alloy consisting essentially of Cr, Si and SiO.
    Type: Grant
    Filed: November 9, 1982
    Date of Patent: July 17, 1984
    Assignee: Hitachi, Ltd.
    Inventors: Katsuo Abe, Tsuneyoshi Kawahito, Tsuneaki Kamei, Masao Mitani, Kazuyuki Fujimoto, Shigetoshi Hiratsuka
  • Patent number: 4444635
    Abstract: A film forming method by plasma sputtering is provided to attain a composite film on a substrate. A target plate having metal materials in a different pattern is prepared in opposition to the substrate. A plasma is created by a planar magnetron sputtering electrode structure. The plasma is shifted magnetically on the target plate by at least three magnetically coupled magnetic poles to deposit the materials into a film with a uniform thickness and a desired composition on the substrate.
    Type: Grant
    Filed: July 21, 1982
    Date of Patent: April 24, 1984
    Assignee: Hitachi, Ltd.
    Inventors: Shigeru Kobayashi, Nobuo Nakagawa, Katsuo Abe, Tsuneaki Kamei, Kazuyuki Fujimoto
  • Patent number: 4430387
    Abstract: A base plate for magnetic recording disc is produced by coating thin metal layers containing no impurities for forming defects by an anodizing treatment on one or both sides of a discoid substrate made of a metal such as aluminum or an aluminum alloy or from a plastic by a dry process, and anodizing the thin metal layers so as to form anodized film from the surfaces of the thin metal layers to a certain depth while the portions contacting to the substrate are retained not anodized.
    Type: Grant
    Filed: November 12, 1980
    Date of Patent: February 7, 1984
    Assignee: Hitachi, Ltd.
    Inventors: Nobuo Nakagawa, Yoshiki Kato, Katsuo Abe, Takao Edamura, Takao Nakamura
  • Patent number: 4405435
    Abstract: An apparatus for performing continuous treatment in vacuum including an inlet chamber, a first intermediate chamber, at least one vacuum treating chamber, a second intermediate chamber and a withdrawing chamber arranged in the indicated order in a direction in which base plates are successively transferred. An opening device normally closed and opened when a base plate is transferred therethrough is mounted on a wall at the inlet of the inlet chamber, between the adjacent chambers and on a wall at the outlet side of the withdrawing chamber. A conveyor device for conveying each base plate in a horizontal direction through the opening device is mounted in each of the chambers, and an evacuating device is also mounted in each chamber. A base plate storing device for storing a plurality of base plates in a magazine is mounted in the first and second intermediate chambers. At least one vacuum treating device is mounted in the vacuum treating chamber.
    Type: Grant
    Filed: August 26, 1981
    Date of Patent: September 20, 1983
    Assignees: Hitachi, Ltd., Anelva Corporation
    Inventors: Hideki Tateishi, Tsuneaki Kamei, Katsuo Abe, Shigeru Kobayashi, Susumu Aiuchi, Masashi Nakatsukasa, Nobuyuki Takahashi, Ryuji Sugimoto
  • Patent number: 4401539
    Abstract: A sputtering apparatus of the planar magnetron type is disclosed, in which a low-pressure gas is ionized by glow discharge, ions in the plasma are accelerated by a voltage applied between a cathode and an anode to bombard a target structure, atoms or particles of a target material sputtered from the planar target plate by the bombardment of ions are deposited on a substrate disposed on the anode side, and thus a thin film made of the same material as the target material is formed on the substrate.
    Type: Grant
    Filed: January 29, 1982
    Date of Patent: August 30, 1983
    Assignee: Hitachi, Ltd.
    Inventors: Katsuo Abe, Shigeru Kobayashi, Tsuneaki Kamei, Hideki Tateishi, Susumu Aiuchi
  • Patent number: 4380964
    Abstract: A holding spindle mountable on a spindle shaft and utilized for printing and coating cylindrical containers includes an outer sleeve for receiving a cylindrical container, the outer sleeve having an inner diameter less than the diameter of the cylindrical container to thereby provide a clearance between the outer sleeve and the cylindrical container disposed thereon. Bearings rotatably mount the outer sleeve on the spindle shaft. A bottom receiving pad on the outer sleeve has a seating surface having a curvature corresponding to the curvature of the bottom surface of the cylindrical container. An aspirating device applying a vacuum to the seating surface has an opening in the seating surface leading to a source of vacuum and providing a vacuum to effect seating and mating of the common curvature of the seating surface and the inside bottom surface of the cylindrical container to thereby enhance the stability of the cylindrical container on the holding spindle.
    Type: Grant
    Filed: March 4, 1981
    Date of Patent: April 26, 1983
    Assignee: Toyo Seikan Kaisha, Ltd.
    Inventors: Katsuo Abe, Masahiro Nishio, Akira Matsubara
  • Patent number: 4308571
    Abstract: A low temperature-sinterable dielectric composition is provided, whose sintered composition when prepared by firing a uniform mixture consisting of lead ferrotungstate, lead titanate and manganese dioxide at a temperature of not higher than 1,000.degree. C. has the general formula A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2, wherein 0.005.ltoreq..times..ltoreq.0.65, A=0.95-0.9995, and B=0.0005-0.05, a relative dielectric constant of at least 2,000 at 25.degree. C., a dissipation factor (tan .delta.) of not more than 5% at 25.degree. C., and a specific resistance of at least 10.sup.9 .OMEGA..cm at 25.degree. C. Also provided is a thick film capacitor having a dielectric layer prepared from said composition.
    Type: Grant
    Filed: March 26, 1980
    Date of Patent: December 29, 1981
    Assignee: Hitachi, Ltd.
    Inventors: Hirayoshi Tanei, Akira Ikegami, Noriyuki Taguchi, Katsuo Abe, Hiroshi Ohtsu, Tokio Isogai
  • Patent number: 4220547
    Abstract: A dielectric paste for a thick film capacitor comprises barium titanate powder, glass frit, magnetite powder, an organic vehicle and a surface-active agent. A dielectric constant higher than 1,100 is obtained by firing at a temperature of 900.degree. C. or lower.
    Type: Grant
    Filed: December 19, 1978
    Date of Patent: September 2, 1980
    Assignee: Hitachi, Ltd.
    Inventors: Katsuo Abe, Noriyuki Taguchi, Nobuyuki Sugishita, Tokio Isogai