Abstract: The present invention provides a device and a method for producing a magnetic recording medium having a lubricant membrane with a uniform thickness on a surface. The device for producing the magnetic recording medium includes: a hanger device that is inserted into the central hole of the magnetic recording medium and supports the magnetic recording medium in a hanging state; and a raising and lowering device that raises and lowers one of the hanging device and an immersion tank with respect to the other thereof. The hanger device includes a support plate of which an upper end comes into contact with an inner circumference of the magnetic recording medium and a liquid-cutting plate which extends from a lower end of the support plate and is distant by a space along the inner circumference of the magnetic recording medium from the inner circumference of the magnetic recording medium.

Abstract: Provided is a magnetic recording medium manufacturing apparatus capable of forming a lubricant film with a uniform thickness on the surface of a magnetic recording medium. The magnetic recording medium manufacturing apparatus includes a hanger mechanism (2) that is inserted into a central hole (100a) of a magnetic recording medium (100) and supports the magnetic recording medium (100) in a suspended state and a lifting mechanism (3) that lifts and lowers one of the hanger mechanism (2) and the dip tank (1) relative to the other.

Abstract: Provided is a magnetic recording medium manufacturing apparatus capable of forming a lubricant film with a uniform thickness on the surface of a magnetic recording medium. The magnetic recording medium manufacturing apparatus includes a hanger mechanism (2) that is inserted into a central hole (100a) of a magnetic recording medium (100) and supports the magnetic recording medium (100) in a suspended state and a lifting mechanism (3) that lifts and lowers one of the hanger mechanism (2) and the dip tank (1) relative to the other.

Abstract: The present invention provides a device and a method for producing a magnetic recording medium, the device and method capable of forming a lubricant membrane with a uniform thickness on a surface of the magnetic recording medium. Specifically, the device for producing the magnetic recording medium according to the invention is a device that forms a lubricant membrane on the surface of the magnetic recording medium by immersing the magnetic recording medium into an immersion tank that has a liquid lubricant and then raising the magnetic recording medium from the immersion tank. The device for producing the magnetic recording medium includes: a hanger device that is inserted into the central hole of the magnetic recording medium and supports the magnetic recording medium in a hanging state; and a raising and lowering device that raises and lowers one of the hanging device and the immersion tank with respect to the other thereof.

Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.

Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.

Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.

Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.

Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.

Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.

Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.

Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.

Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden band width is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.

Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.