Abstract: A polishing machine for polishing a periphery of a sheet of the present invention comprises a grinding shaft tilting mechanism (1) capable of changing a tilting angle of a rotary shaft of a grinding stone (3) with respect to a rotary shaft of the sheet (2) and also capable of changing its tilting direction. Accordingly, in a recess portion or a protrusion portion in the periphery, when the tilting direction is changed while the tilting angle is being maintained, chamfering (polishing) can be executed with high accuracy in the same manner as that of the outer circumferential portion of the sheet.

Abstract: In the planarization apparatus, an etching stage is installed in a body where a rough grinding stage and a finishing grinding stage are disposed, and the rough grinding, finishing grinding, and etching of a wafer are performed in the same planarization apparatus. A chuck for holding the wafer is moved in an order through the rough grinding stage, the finishing grinding stage and the etching stage while keeping holding the wafer. When the chuck is positioned at the etching stage, the chuck is moved up toward an etching vessel and the wafer that is held by the chuck is housed in the etching vessel. In this state, etching solution is projected on the wafer from a nozzle and the wafer is etched.

Abstract: A polishing machine for polishing a periphery of a sheet of the present invention comprises a grinding shaft tilting mechanism (1) capable of changing a tilting angle of a rotary shaft of a grinding stone (3) with respect to a rotary shaft of the sheet (2) and also capable of changing its tilting direction. Accordingly, in a recess portion or a protrusion portion in the periphery, when the tilting direction is changed while the tilting angle is being maintained, chamfering (polishing) can be executed with high accuracy in the same manner as that of the outer circumferential portion of the sheet.

Abstract: A wafer is rotated on its axis, which is biased with regard to an axis of a grinding wheel, and revolves around an axis which is biased with regard to the axis of the wafer and the axis of the grinding wheel. In this state, the grinding wheel is abutted against the surface of the wafer. Thus, all abrasive grains on the grinding wheel can act on the whole surface of the wafer.

Abstract: A wafer is rotated on its axis, which is biased with regard to an axis of a grinding wheel, and revolves around an axis which is biased with regard to the axis of the wafer and the axis of the grinding wheel. In this state, the grinding wheel is abutted against the surface of the wafer. Thus, all abrasive grains on the grinding wheel can act on the whole surface of the wafer.

Abstract: A semiconductor wafer is placed on a table, and a grinding wheel grinds the surface of the semiconductor wafer. Non-contact sensors are arranged above the semiconductor wafer to detect the thickness of the semiconductor wafer during grinding. Each piece of information relating to the thickness is output to a CPU. Piezoelectric devices are arranged at regular intervals between a flange, which is secured to a grinding wheel spindle, and a frame 40. Voltages applied to the piezoelectric devices are controlled by a piezoelectric device controller which is controlled by the CPU. When the piezoelectric devices are driven, the attitude of the grinding wheel spindle is controlled in such a manner as to be rocked with regard to the table. If the CPU calculates the detected values of the sensors during the grinding, the direction and magnitude of inclination of the table and the grinding wheel spindle can be found.

Abstract: A wafer is rotated on its axis, which is biased with regard to an axis of a grinding wheel, and revolves around an axis which is biased with regard to the axis of the wafer and the axis of the grinding wheel. In this state, the grinding wheel is abutted against the surface of the wafer. Thus, all abrasive grains on the grinding wheel can act on the whole surface of the wafer.

Abstract: A method and apparatus for slicing semiconductor wafers. An inner peripheral cutting edge has a doughnut-shaped blade with electro-deposited diamond grains. The blade is attached to a moving trestle. The moving trestle moves along rails located on both sides of the inner peripheral cutting edge and is driven by instruction signals from a control section. A workpiece is placed within the inner peripheral cutting edge and rotated about the axis thereof by a motor. The motor is mounted on a beam member and is driven by instruction signals from the control section. With this arrangement, the inner peripheral cutting edge is rotated in the direction of arrow A. Then, the moving trestle moves in the direction of arrow B by the control section and the workpiece is pressed against a grindstone on the inner peripheral cutting edge cutting the workpiece by a predetermined value.

Abstract: According to the present invention, the rotary axis O--O of a grindstone 22 is inclined to the rotary axis P--P of a semiconductor wafer 20 through an angle .theta. in a direction of the tangent line of the semiconductor wafer. Accordingly, a moving direction of abrasive grains of the grindstone 22 is divided into two including a component force A.sub.1 in the grinding direction and a component force A.sub.2 in the perpendicular direction, and these component forces increase the number of acting abrasive grains, so that the accuracy of the chamfering shape and the surface roughness can be improved. According to the present invention, the peripheral edge of the rotating semiconductor wafer is chamfered while the rotating grindstone 22 is reciprocatingly moved along the inclined grinding surface 24, whereby the number of the acting abrasive grains are increased, so that the accuracy of the chamfering shape and the surface roughness can be improved.

Abstract: A method and a device for dressing an inner peripheral blade used in a slicing machine which slices a silicone ingot or the like into thin wafers. In the method and device, the manner of dressing the inner peripheral blade can be determined from the career of the inner peripheral blade, the value of slicing resistance occurring during the slicing of the ingot, the amount of displacement of the inner peripheral blade during the ingot slicing, and the shape of the end face of the ingot after slicing of the ingot. Based on this determination, a dressing stick provided in the dressing device is driven, so that the inner peripheral blade can be dressed automatically.

Abstract: Method and apparatus for cutting a cylindrical material formed of silicone or the like which is an original material to produce semiconductor devices, using a rotary blade. In the cutting method, the base end side of the cylindrical material is fixed and at the same time, before the cutting of the cylindrical material is started, the cutting side of the cylindrical material is also fixed according to the shape thereof. The cutting is performed while maintaining such fixed conditions until the cutting is completed.

Abstract: In an apparatus and a method for slicing a cylindrical semiconductor ingot into thin wafer pieces using an inner peripheral sliding blade, a grind stone shaft with a grind stone mounted to the tip end thereof is located movably axially within a rotor provided with the inner perpheral sliding blade so that the grind stone shaft and rotor can be rotated integrally but axially movable relative to each other. the grind stone and slicing blade are arranged effieciently so that, after the semiconductor ingot is sliced with the slicing blade, the grind stone approaches the end face of the ingot to grind it. This can save a lapping step, thereby improving working efficiency.

Abstract: In an apparatus and a method for slicing a cylindrical semiconductor ingot into thin wafer pieces using an inner peripheral sliding blade, a grind stone shaft with a grind stone mounted to the tip end thereof is located movably axially within a rotor provided with the inner peripheral sliding blade so that the grind stone shaft and rotor can be rotated integrally but axially movable relative to each other. The grind stone and slicing blade are arranged efficiently so that, after the semiconductor ingot is sliced with the slicing blade, the grind stone approaches the end face of the ingot to grind it. This can save a lapping step, thereby improving working efficiency.

Abstract: An internal peripheral edge type blade holding device for use in an internal peripheral edge type slicing machine used when a silicone ingot is sliced into thin pieces each having a thickness of the order of several hundred microns in a semiconductor manufacturing process. In the blade holding device, a head assembly for stretching and holding an internal peripheral edge blade is supported to a rotary plate through 4 plate springs spaced at 90.degree. intervals. Accordingly, when stretching the internal peripheral edge blade, even if the tension assembly is deformed because of the anisotropic property of the blade, such deformation can be absorbed by the plate springs and thus is not transmitted to the rotary plate, so that the swaying of the edge of the internal peripheral edge blade can be prevented in cutting the ingot.