Abstract: In an electrodeposition system, the final quality of a coating is prevented from being degraded due to a coating material-containing aqueous solution flowing out of a steel plate mating portion during a drying process, while derivative problems such as an increase in the size of the system, an increase in the initial costs and the running costs, and a decrease in reliability are avoided. A washing zone that is subsequent to an electrodeposition zone in which an object to be coated is immersed in a coating material solution for electrodeposition so that a coating is formed on a surface of the object to be coated is provided with: a hot water washing tank in which the coated object is washed by being immersed in high-temperature washing water in the tank; and a spray washer that sprays a steel plate mating portion of the coated-object with high-temperature washing water, subsequent to washing in the hot water washing tank.

Abstract: In an electrodeposition system, the final quality of a coating is prevented from being degraded due to a coating material-containing aqueous solution flowing out of a steel plate mating portion during a drying process, while derivative problems such as an increase in the size of the system, an increase in the initial costs and the running costs, and a decrease in reliability are avoided. A washing zone that is subsequent to an electrodeposition zone in which an object to be coated is immersed in a coating material solution for electrodeposition so that a coating is formed on a surface of the object to be coated is provided with: a hot water washing tank in which the coated object is washed by being immersed in high-temperature washing water in the tank; and a spray washer that sprays a steel plate mating portion of the coated-object with high-temperature washing water, subsequent to washing in the hot water washing tank.

Abstract: A semiconductor device is manufactured by a method including forming a first interlayer insulating film. A first etching stopper film is formed on the first interlayer insulating film. A conductive layer is formed on the first etching stopper film. A second etching stopper film is formed to cover the conductive layer, an upper surface of the conductive layer and both side surfaces of the conductive layer. A second interlayer insulating film is formed on the second etching stopper film. A hole is formed penetrating the second interlayer insulating film in a direction of thickness and reaching the conductive layer. An interconnect is formed in the hole. The step of forming a hole includes etching the second interlayer insulating film under a first etching condition, and etching the second etching stopper film under a second etching condition different from the first etching condition. The second etching condition includes using an etching gas containing C, F, and H.

Abstract: A semiconductor device is manufactured by a method including forming a first interlayer insulating film. A first etching stopper film is formed on the first interlayer insulating film. A conductive layer is formed on the first etching stopper film. A second etching stopper film is formed to cover the conductive layer, an upper surface of the conductive layer and both side surfaces of the conductive layer. A second interlayer insulating film is formed on the second etching stopper film. A hole is formed penetrating the second interlayer insulating film in a direction of thickness and reaching the conductive layer. An interconnect is formed in the hole. The step of forming a hole includes etching the second interlayer insulating film under a first etching condition, and etching the second etching stopper film under a second etching condition different from the first etching condition.

Abstract: An etching stopper film is formed on an interlayer insulating film. A conductive layer is formed on the etching stopper film. An etching stopper film is formed to cover the conductive layer. An interlayer insulating film is formed on the etching stopper film. In a structure above, initially, a hole vertically penetrating the interlayer insulating film for exposing a surface of the etching stopper film is formed under a first etching condition. Thereafter, the etching stopper film serving as a bottom surface of the hole is removed under a second etching condition, thereby forming the hole reaching the conductive layer. An interconnection is embedded in the hole. A semiconductor device in which a hole reaching the conductive layer is prevented from extending as far as the lower interlayer insulating film as a result of misalignment, as well as a manufacturing method thereof are thus obtained.

Abstract: An etching stopper film is formed on an interlayer insulating film. A conductive layer is formed on the etching stopper film. An etching stopper film is formed to cover the conductive layer. An interlayer insulating film is formed on the etching stopper film. In a structure above, initially, a hole vertically penetrating the interlayer insulating film for exposing a surface of the etching stopper film is formed under a first etching condition. Thereafter, the etching stopper film serving as a bottom surface of the hole is removed under a second etching condition, thereby forming the hole reaching the conductive layer. An interconnection is embedded in the hole. A semiconductor device in which a hole reaching the conductive layer is prevented from extending as far as the lower interlayer insulating film as a result of misalignment, as well as a manufacturing method thereof are thus obtained.

Abstract: An etching stopper film is formed on an interlayer insulating film. A conductive layer is formed on the etching stopper film. An etching stopper film is formed to cover the conductive layer. An interlayer insulating film is formed on the etching stopper film. In a structure above, initially, a hole vertically penetrating the interlayer insulating film for exposing a surface of the etching stopper film is formed under a first etching condition. Thereafter, the etching stopper film serving as a bottom surface of the hole is removed under a second etching condition, thereby forming the hole reaching the conductive layer. An interconnection is embedded in the hole. A semiconductor device in which a hole reaching the conductive layer is prevented from extending as far as the lower interlayer insulating film as a result of misalignment, as well as a manufacturing method thereof are thus obtained.

Abstract: A plasma processing apparatus and a plasma processing method used in etching, ashing, CVD, etc. in the manufacturing, etc. of large-scale integrated circuits (LSIs) and liquid crystal display panels (LCDs). The plasma processing apparatus includes a dielectric plate used for the passage of a microwave, a microwave window disposed to confront the dielectric plate, and a reaction chamber in which a sample stage is disposed to confront the microwave window. The apparatus is characterized in that the microwave window has a recess in the area confronting the sample stage. The plasma processing method is characterized by implementing a plasma process for a sample with the plasma processing apparatus. The method and apparatus are capable of raising the plasma density in the area confronting the sample, improving the plasma processing rate, improving the etch-through performance for fine hole patterns, and improving the yield of semiconductor devices.

Abstract: A plasma processing apparatus and plasma processing method are provided to be used for etching, ashing, CVD, etc. in the manufacturing, etc. of large-scale integrated circuits (LSIs) and liquid crystal display panels (LCDs). The plasma processing apparatus generates plasma by using a microwave introduced through a microwave window, while controlling the ions in the plasma by varying the RF voltage applied to the sample stage. The apparatus is characterized to include a counter electrode (grounded electrode) which is located at the rim section of the microwave window against the sample stage. The plasma processing method implements a plasma process for a sample with the plasma processing apparatus. The method and apparatus are capable of alleviating the sticking of particles to the sample and metallic contamination, and also capable of improving the yield of semiconductor devices, etc.

Abstract: A plasma processing apparatus includes a conductive thin film provided on a surface of a microwave introducing member which is exposed to a processing chamber, in which an object to be processed is placed. The conductive thin film is provided at the entire portion excluding a transmission portion, through which microwaves pass into the processing chamber. The conductive thin film is grounded to act as an electrode.

Abstract: A plasma processing apparatus includes a microwave introducing member, which is provided with a microwave transmission opening through which microwaves pass into a processing chamber. The microwave introducing member is also provided at a transmission opening with a dielectric member. Preferably, the dielectric member is formed to have a relative dielectric constant of 4 to 10 and an insulation resistance of 10.sup.8 to 10.sup.12 .OMEGA..

Abstract: A microwave plasma processing system, wherein a conductor disposed for controlling the anisotropy and the acceleration energy of ions in a plasma has inside a flow path for reactant gasses and a plurality of holes through which the gasses are to be blown toward a sample holder.A microwave plasma processing system, wherein the ratio of the total area of microwave transmission holes to the area of a conductor is set to be in a range of 0.25 to 0.65.A microwave plasma processing system, wherein each microwave transmission hole formed in a conductor has a dimension in the microwave traveling direction greater than that in a direction perpendicular to the traveling direction.

Abstract: A microwave plasma processing system has heating means for heating the wall of a reaction chamber, and an adhesion preventing member in which a cylinder disposed so as to be in contact with the inner face of a wall of the reaction chamber and a microwave reflecting plate having a gas discharge hole are integrally formed.A microwave plasma processing system has heating means for heating the wall of a reaction chamber, and a microwave reflecting plate which is attached to the inner face of a wall of the reaction chamber and which has a gas discharge hole.