Abstract: The wiring of a semiconductor device having a multilayer interconnection on a semiconductor substrate is modified. A plurality of fine holes are formed on an insulation film by the radiation of a converged energy beam to expose selected ones of the internal lines of the underlying wiring. A thin buffer film of Cr, Ti, TiN, or W is formed along a path where an additional connection line is to be deposited. The path extends along an upper surface of the insulating film at least in and between the said fine holes. The additional connection line is deposited on the buffer film by energy beam CVD, using Mo, W, or Al, to interconnect the exposed internal lines. The additional connection line is annealed by radiating an energy beam thereon to reduce its resistance. A further insulating film is deposited covering the additional connection line by energy beam CVD.

Abstract: A semiconductor IC device having a substrate, a patterned conductor layer for interconnection of regions in the substrate and a passivation layer covering the device is provided with an additional conduction path of a pattern and/or part of the patterned conductor layer is removed for disconnection for the purpose of evaluation of the characteristics of the device. The additional conduction path is formed by forming a hole in the passivation layer to expose a part of the conductor layer, directing, in an atmosphere containing a metal compound gas, an ion beam onto the hole and onto a predetermined portion of the passivation layer on which the additional conduction path of a pattern is to be formed to thereby form a patterned film of the metal decomposed from the metal compound gas and forming an additional conductor on the patterned film.

Abstract: An ion beam apparatus which comprises an enclosure defining a chamber of high vacuum. A crucible for producing vapor of a material, ionizing means, ion accelerating means, and a substrate to be deposited with the vaporized material to thereby form a film thereon are disposed within the chamber. An accelerating voltage is applied across the crucible and the accelerating means such that the crucible is of positive polarity while the accelerating means is of negative polarity. The material contained in the crucible is vaporized by heating. A pressure difference is maintained between the vapor pressure within the crucible and the vacuum chamber.

Abstract: A light source apparatus comprises one laser oscillator, at least one other laser oscillator, a light converter for converting a laser beam emitted from the other laser oscillator into a ring-shaped laser beam, and a reflecting mirror for passing a laser light beam emitted from the one laser oscillator through the center hole of the mirror and for reflecting the ring-shaped laser beam from the other laser oscillator via the light converter, the laser beam reflected by the reflecting mirror being coaxial with and being overlapped with the laser beam transmitted through the mirror from the one laser oscillator.

Abstract: A photomask with white defects that have corrected with a film comprising a mixture of silver and tantalum oxide. The film has a good resistance to chemicals.

Abstract: A method and apparatus for repairing defect portions of a photomask. A complex material from which a light shading material can be deposited is applied over the photomask. A white (blank) defect region is irradiated with a continuous wave laser light beam projected in a slit-like light image to thereby convert the complex material into the shading material. After washing, a half-deposited portion formed in a peripheral portion of the light shading region is further deposited by a post-baking process. Those portions of the light shading film which depart from the desired mask pattern are removed together with black (solid) defect portion originally present in the photomask through irradiation with a pulse laser light beam. The pulse laser is constituted by a Dye-laser, while the continuous wave laser is constituted by an Ar-laser. A specific half-mirror which transmits therethrough Ar-laser light while reflecting Dye-laser light is displaceable provided.

Abstract: A method and apparatus for correcting transparent defects on a photomask are disclosed. A metal-organic complex solution is applied to a transparent defect portion and its periphery on the photomask. The transparent defect portion is then exposed to a visible ray or ultraviolet ray to deposit a metal, a metal oxide or a composition thereof, while the light transmission quantity through the transparent defect portion is measured. After the measurement falls below a predetermined level relative to the quantity of the transmitted light at the start of exposure, the exposure is terminated to thereby complete the correction of the transparent defects.