Patents by Inventor Katsuro Sugawara

Katsuro Sugawara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for monitoring thickness of epitaxial growth layer on substrate
    Patent number: 4203799
    Abstract: In growing on a substrate a film of substance of a similar kind to the substrate, ions are implanted into the substrate to form within the substrate a layer of substance having an optical property different from that of the substrate, and an epitaxial film is then grown. Thus, the thickness of the film can be monitored with an interference waveform appearing with its growth.
    Type: Grant
    Filed: May 2, 1978
    Date of Patent: May 20, 1980
    Assignee: Hitachi, Ltd.
    Inventors: Katsuro Sugawara, Yukiyoshi Nakazawa, Katsuhiko Itoh
  • Method of forming passivation film
    Patent number: 4067099
    Abstract: A method of forming a passivation film, wherein after circuit elements have been formed in the semiconductor substrate, a thin conductive film is formed on the entire surface of the substrate and then an insulating film is formed through electric discharge on the surface of the thin conductive film while the thin conductive film is kept at a constant potential.
    Type: Grant
    Filed: August 31, 1976
    Date of Patent: January 10, 1978
    Assignee: Hitachi, Ltd.
    Inventors: Satoru Ito, Masataka Ota, Katsuro Sugawara
  • Semiconductor device having two annular electrodes
    Patent number: 4000507
    Abstract: In a semiconductor device wherein an insulating film is provided on that surface of a semiconductor substrate to which a base-collector junction extends, two annular electrodes are formed with the junction formed therebetween. One of the electrodes is maintained at base potential, while the other electrode is maintained at collector potential. Thus, moisture or like contaminants adhering to the insulating film are prevented from leading to the generation of excessive channel current.
    Type: Grant
    Filed: January 20, 1975
    Date of Patent: December 28, 1976
    Assignee: Hitachi, Ltd.
    Inventors: Sumio Nishida, Katsuro Sugawara, Eiichi Yamada, Satoru Ito, Kohei Yamada