Abstract: When a flow rate of a diluent gas is larger than a flow rate of a reaction gas, a reaction gas introducing tube (113) is connected to a part of a diluent gas introducing tube (111) which connects a plasma processing reaction chamber (101) to a diluent gas feeding unit (112). Thus, the reaction gas can be fully mixed with the diluent gas in the diluent gas introducing tube (111), and a gas feed piping can be of a simpler configuration.

Abstract: A plasma processing apparatus of this invention includes a sealable chamber to be introduced with reactive material gas, a plurality of pairs of cathode-anode bodies arranged in the chamber, for forming a plurality of discharge spaces for performing plasma discharge of the material gas, a power supply for plasma discharge, placed outside the chamber, a matching box placed outside the chamber, for matching impedance between the cathode-anode bodies and the power supply, and a power introduction wire extending to each of the cathodes from the power supply via the matching box. Herein, the power introduction wire is branched to the number corresponding to the number of the cathodes between the matching box and the cathodes, and the branched wires are symmetrically extended.

Abstract: In a cooling system, a compressor (1), a heat source (2), a heat exchanger (3), and a buffer tank (4) are connected in that order by piping (5) to constitute a closed circuit. In the closed circuit, nitrogen serving as a refrigerant is circulated without contacting open air. Any gas except for the air may be used as the refrigerant as long as the gas absorbs heat from the heat source (2) and dissipates the heat to the outside in the heat exchanger (3) when the gas is circulated in the closed circuit without being liquefied.

Abstract: The invention relates to a generation facility management system using natural energy, and an object of the invention is to promote introduction of a generation facility by giving a consideration for generated and consumed power.

Abstract: A plasma processing apparatus characterized by comprising within a sealable chamber: an internal structural body that is disposed to be spaced apart from an inner wall surface of the chamber and that forms an inside space for housing a substrate serving as an object of processing; a substrate holding section that houses the substrate within the inside space; reactive gas supplying means for supplying a reactive gas to the inside space; a cathode and an anode that are supported by the internal structural body and disposed on both sides of the substrate within the inside space and that generate plasma discharge of the reactive gas; a heater that is supported by the internal structural body and that heats the substrate within the inside space; and heat-dissipating means capable of dissipating a Joule heat generated by the plasma discharge to outside of the inside space.

Abstract: A plasma CVD apparatus comprises an anode electrode and a cathode electrode, and is for forming a thin film on a substrate by performing plasma discharge between the anode electrode and the cathode electrode, comprising: a substrate holder disposed between the anode electrode and the cathode electrode; and one conductive member disposed between the substrate holder and one electrode of either the anode electrode or the cathode electrode, wherein the substrate holder supports the substrate, the one conductive member is provided between the one electrode and the substrate holder so as to substantially cover an entire space between the one electrode and the substrate holder, and the one conductive member is electrically connected to the one electrode and the substrate holder.

Abstract: A plasma CVD apparatus comprises an anode electrode and a cathode electrode, and is for forming a thin film on a substrate by performing plasma discharge between the anode electrode and the cathode electrode, comprising: a substrate holder disposed between the anode electrode and the cathode electrode; and one conductive member disposed between the substrate holder and one electrode of either the anode electrode or the cathode electrode, wherein the substrate holder supports the substrate, the one conductive member is provided between the one electrode and the substrate holder so as to substantially cover an entire space between the one electrode and the substrate holder, and the one conductive member is electrically connected to the one electrode and the substrate holder.

Abstract: A plasma processing apparatus of this invention includes a sealable chamber, a gas supply source of reactive material gas, placed outside the chamber, a gas introduction pipe connected to the gas supply source, for introducing the material gas into the chamber, and a plurality of sets of cathode-anode bodies for forming a plurality of discharge spaces which perform plasma discharge of the material gas in the chamber. Herein, the gas introduction pipe includes a gas branch section arranged in the chamber, a main pipe for connecting the gas supply source to the gas branch section, and a plurality of branch pipes connected from the main pipe to each of the discharge spaces via the gas branch section. The branch pipes are configured so that conductances thereof are substantially equivalent to each other.

Abstract: A plasma processing apparatus of this invention includes a sealable chamber to be introduced with reactive material gas, a plurality of pairs of cathode-anode bodies arranged in the chamber, for forming a plurality of discharge spaces for performing plasma discharge of the material gas, a power supply for plasma discharge, placed outside the chamber, a matching box placed outside the chamber, for matching impedance between the cathode-anode bodies and the power supply, and a power introduction wire extending to each of the cathodes from the power supply via the matching box. Herein, the power introduction wire is branched to the number corresponding to the number of the cathodes between the matching box and the cathodes, and the branched wires are symmetrically extended.

Abstract: A plasma processing apparatus including a sealable chamber that is sealable, a gas supply section that supplies a reactive material gas into the chamber, and a plurality of cathode and anode electrode pairs provided within the chamber, connected to an external power supply, and producing plasma discharges through the material gas, respectively, wherein the plurality of cathode and anode electrode pairs are provided at a distance from one another at which the plasma discharges are prevented from interfering with one another.

Abstract: A thin film formation apparatus for forming a thin film on a substrate is provided, which comprises: a reaction chamber; a gas introduction section for introducing a reactant gas into the reaction chamber; an evacuation section for exhausting the reactant gas from the reaction chamber; first and second planar electrodes provided in the reaction chamber; first and second support members which respectively support the first and second electrodes in parallel relation; a high frequency power source for applying high frequency power between the first and second electrodes; and a heating section for heating one of the first and second electrodes; wherein the substrate is placed on the heated electrode, and at least one of the first and second electrodes is supported movably in the direction of thermal expansion by the corresponding support member.

Abstract: An excellent silicon-based thin-film photoelectric conversion device is manufactured simply and efficiently at a low cost. Specifically, a method of manufacturing the silicon-based thin-film photoelectric conversion device including a p-type semiconductor layer, an i-type microcrystalline silicon-based photoelectric conversion layer and an n-type semiconductor layer deposited by plasma CVD includes the steps of: successively depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer on a substrate within the same plasma CVD film deposition chamber; transferring the substrate out of the film deposition chamber; and subsequently to the step of depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer, eliminating influences of remaining n-type impurities on a cathode and/or within the film deposition chamber.

Abstract: An excellent silicon-based thin-film photoelectric conversion device is manufactured simply and efficiently at a low cost. Specifically, a method of manufacturing the silicon-based thin-film photoelectric conversion device including a p-type semiconductor layer, an i-type microcrystalline silicon-based photoelectric conversion layer and an n-type semiconductor layer deposited by plasma CVD includes the steps of: successively depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer on a substrate within the same plasma CVD film deposition chamber; transferring the substrate out of the film deposition chamber; and subsequently to the step of depositing the p-type semiconductor layer, the i-type microcrystalline silicon-based photoelectric conversion layer and the n-type semiconductor layer, eliminating influences of remaining n-type impurities on a cathode and/or within the film deposition chamber.

Abstract: The invention provides a deposition apparatus that enables significant reduction in the total gas consumption, simplification of the overall structure of the apparatus, and cost reduction of the apparatus even when feeding gas into a plurality of thin-film formation spacings. The apparatus has a plurality of thin-film formation spacings for forming same thin films. Source-gas feed openings capable of feeding at least a source gas are provided in each of the plurality of thin-film formation spacings. A discharge gas of at least one of the plurality of thin-film formation spacings can be fed into another one of the plurality of thin-film formation spacings through a discharge-gas flow path. A dilution gas is fed into the former thin-film formation spacing, and the discharge gas is discharged to the outside from the external discharge port of the another thin-film formation spacing.

Abstract: A plasma CVD apparatus comprises an anode electrode and a cathode electrode, and is for forming a thin film on a substrate by performing plasma discharge between the anode electrode and the cathode electrode, comprising: a substrate holder disposed between the anode electrode and the cathode electrode; and one conductive member disposed between the substrate holder and one electrode of either the anode electrode or the cathode electrode, wherein the substrate holder supports the substrate, the one conductive member is provided between the one electrode and the substrate holder so as to substantially cover an entire space between the one electrode and the substrate holder, and the one conductive member is electrically connected to the one electrode and the substrate holder.

Abstract: A semiconductor device manufacturing unit is provided, wherein a cathode and an anode can be placed in a simple structure; wherein excellent film deposition and film thickness distribution can be gained; and wherein no cooling devices are required to be provided.

Abstract: A thin film formation apparatus for forming a thin film on a substrate is provided, which comprises: a reaction chamber; a gas introduction section for introducing a reactant gas into the reaction chamber; an evacuation section for exhausting the reactant gas from the reaction chamber; first and second planar electrodes provided in the reaction chamber; first and second support members which respectively support the first and second electrodes in parallel relation; a high frequency power source for applying high frequency power between the first and second electrodes; and a heating section for heating one of the first and second electrodes; wherein the substrate is placed on the heated electrode, and at least one of the first and second electrodes is supported movably in the direction of thermal expansion by the corresponding support member.

Abstract: A thin-film solar cell module of a light transmission type includes a light-transmissive substrate; a front electrode layer; a rear electrode layer, and a photovoltaic conversion layer. The rear electrode layer, front electrode layer, and photovoltaic conversion layer are sequentially laminated on the light-transmissive substrate. A heat retention member covers the rear electrode layer, and a sealing layer is provided for sealing the rear electrode layer. In certain embodiments, the heat retention member has a light absorptance of 40% or more within a near-infrared wavelength range of 1,500 to 2,000 nm.

Abstract: A photoelectric conversion device including a plurality of pin junction layers, wherein at least a p-layer adjacent to an n-layer is formed of a stack of an amorphous silicon layer as a first p-layer and an amorphous silicon layer as a second p-layer, the first p-layer having a thickness of 5 nm or less and containing a p-type impurity and an n-type impurity, and the second p-layer having a p-type impurity concentration gradually decreasing as it is closer to an i-layer.

Abstract: A thin-film solar cell module of a light transmission type includes a light-transmissive substrate; a front electrode layer; a photovoltaic conversion layer; a rear electrode layer, the front electrode layer, the photovoltaic conversion layer and the rear electrode layer being sequentially laminated on the light-transmissive substrate; a heat retention member covering the rear electrode layer: and a sealing layer for sealing the rear electrode layer. The heat retention member has a light absorptance of 40% or more within a near-infrared wavelength range of 1,500 to 2,000 nm.