Patents by Inventor Katsushi Tokunaga
Katsushi Tokunaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230374588Abstract: One or more of HLA gene primers selected from the group consisting of the following (1) to (3): (1) one or more HLA-G gene primers which are (1a) a first primer including the nucleotide sequence of SEQ ID NO. 1 and/or (1b) a second primer including the nucleotide sequence of SEQ ID NO. 3, (2) one or more HLA-E gene primers which are (2a) a first primer including the nucleotide sequence of SEQ ID NO. 5 and/or (2b) a second primer including the nucleotide sequence of SEQ ID NO. 7, and (3) one or more HLA-F gene primers which are (3a) a first primer including the nucleotide sequence of SEQ ID NO. 9 and/or (3b) a second primer including the nucleotide sequence of SEQ ID NO. 11.Type: ApplicationFiled: October 7, 2021Publication date: November 23, 2023Applicants: NATIONAL CENTER FOR GLOBAL HEALTH AND MEDICINE, H.U. Group Research Institute G.K.Inventors: Katsushi TOKUNAGA, Seik-Soon KHOR, Yosuke OMAE, Ikue NAITO, Tetsuya SATO, Shunichi WAKABAYASHI
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Publication number: 20160304976Abstract: An object of the present invention is to provide a method for detecting predisposition for chronicity of hepatitis B and/or the pathological progress, including an allele associated with chronicity of hepatitis B and/or the pathological progress.Type: ApplicationFiled: August 28, 2014Publication date: October 20, 2016Inventors: Katsushi Tokunaga, Hiromi Sawai, Masashi Mizokami, Nao Nishida
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Patent number: 6815605Abstract: There can be provided according to the present invention a silicon single crystal produced according to Czochralski method to which Ga (gallium) is added as a dopant characterized in that a resistivity is 5&OHgr;.cm to 0.1&OHgr;.cm and a method for producing a silicon single crystal to which Ga (gallium) is added as a dopant according to Czochralski method characterized in that Ga is added in a silicon melt in a crucible, a seed crystal is brought into contact with the silicon melt and is pulled with rotating to grow a silicon single crystal ingot. Thereby, a silicon single crystal and silicon single crystal wafer and a method for producing them that can produce a solar cell characterized in that photo-degradation is not caused even in the single crystal having high oxygen concentration and a conversion efficiency of optical energy is very high.Type: GrantFiled: January 18, 2001Date of Patent: November 9, 2004Assignees: Shin-Etsu Handotai Co., Ltd., Shin-Etsu Chemical Co., Ltd.Inventors: Takao Abe, Teruhiko Hirasawa, Katsushi Tokunaga, Tetsuya Igarashi, Masafumi Yamaguchi
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Patent number: 6762021Abstract: The present invention provides a reagent for diagnosing Crohn's disease, which contains at least one member selected from the group consisting of a group of substances having a specific affinity for a protein (or a gene thereof) whose expression is potentiated in a lesion-specific manner, such as a substance having a specific affinity for PP6 regulated by IL-2 (or a gene thereof), a substance having a specific affinity for TNIK (or a gene thereof), a substance having a specific affinity for FLIP (or a gene thereof), a substance having a specific affinity for GR&agr; (or a gene thereof) and the like. By taking note of a gene whose expression is potentiated in a lesion-specific manner, and examining the behavior thereof by the use of this diagnostic reagent, the disease can be diagnosed easily and quickly.Type: GrantFiled: May 22, 2001Date of Patent: July 13, 2004Assignee: Mitsubishi Pharma CorporationInventors: Katsushi Tokunaga, Naoyuki Tsuchiya
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Publication number: 20020081585Abstract: The present invention provides a reagent for diagnosing Crohn's disease, which contains at least one member selected from the group consisting of a group of substances having a specific affinity for a protein (or a gene thereof) whose expression is potentiated in a lesion-specific manner, such as a substance having a specific affinity for PP6 regulated by IL-2 (or a gene thereof), a substance having a specific affinity for TNIK (or a gene thereof), a substance having a specific affinity for FLIP (or a gene thereof), a substance having a specific affinity for GR&agr; (or a gene thereof) and the like. By taking note of a gene whose expression is potentiated in a lesion-specific manner, and examining the behavior thereof by the use of this diagnostic reagent, the disease can be diagnosed easily and quickly.Type: ApplicationFiled: May 22, 2001Publication date: June 27, 2002Inventors: Katsushi Tokunaga, Naoyuki Tsuchiya
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Patent number: 6313398Abstract: There are disclosed multi-crystalline silicon which is added with Ga (gallium) as a dopant and a method for producing Ga-doped multi-crystalline silicon, which comprises adding Ga to silicon melt in a crucible, which is melted by heating, and cooling the silicon melt to allow growth of multi-crystalline silicon. According to the present invention, there are provided multi-crystalline silicon and a multi-crystalline silicon wafer for producing solar cells showing stable conversion efficiency for light energy without causing photodegradation as well as methods for producing them.Type: GrantFiled: June 15, 2000Date of Patent: November 6, 2001Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Toru Yamada, Katsushi Tokunaga, Teruhiko Hirasawa
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Patent number: 5720861Abstract: An improvement is proposed in the method for the preparation of a magnetic recording medium comprising a non-magnetic substrate plate of silicon and a magnetic recording layer formed on the substrate surface by the method of bias-sputtering, by which the magnetic recording layer can be imparted with an unexpectedly large coercive force. The improvement can be accomplished by the use of a silicon substrate plate which has a volume resistivity not exceeding 2 ohm-cm at room temperature. The improvement is more remarkable when the contact resistance between the silicon substrate plate and the substrate holder is kept not to exceed 10 kohm during the bias-sputtering for the formation of the magnetic recording layer on the substrate surface.Type: GrantFiled: August 17, 1995Date of Patent: February 24, 1998Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Hideo Kaneko, Katsushi Tokunaga, Yoshio Tawara
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Patent number: 5643650Abstract: The recording sensitivity can be improved of a magneto-optical recording medium having a laminar structure consisting of a first dielectric layer, a recording layer, a second dielectric layer and reflecting layer successively formed on a transparent substrate plate by forming the reflecting layer from an alloy consisting of aluminum and from 0.05 to 3 atomic % of a rare earth element such as neodymium and gadolinium in place of pure aluminum as in conventional magneto-optical recording media.Type: GrantFiled: June 28, 1995Date of Patent: July 1, 1997Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Yoshio Tawara, Katsushi Tokunaga, Hideo Kaneko, Yoshiaki Shimizu
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Patent number: 5591502Abstract: Proposed is a magnetic recording medium consisting of a non-magnetic substrate and a magnetic recording layer formed thereon by the method of sputtering, in which the non-magnetic substrate is a disk of single crystal silicon having a surface of the crystallographic orientation of (100), the surface roughness Rp being 40 nm or smaller. By virtue of the use of the unique material for the substrate, the magnetic recording layer is outstandingly stable as compared with conventional aluminum or glass substrates and the magnetic layer formed thereon by sputtering has a greatly improved coercive force of 1300 oersted or higher.Type: GrantFiled: December 2, 1994Date of Patent: January 7, 1997Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Hideo Kaneko, Katsushi Tokunaga, Yoshio Tawara
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Patent number: 5582897Abstract: Proposed is a magnetic recording medium consisting of a non-magnetic substrate and a magnetic recording layer formed thereon by the sputtering method, in which the non-magnetic substrate is a disk of single crystal silicon having a surface substantially in parallel with the crystallographic (111) plane with an angle of deviation not exceeding 15.degree., of which the surface roughness Rp does not exceed 25 nm. By virtue of the use of the unique material for the substrate, the magnetic recording layer is outstandingly stable as compared with conventional aluminum or glass substrates and the magnetic layer formed thereon by sputtering has a greatly improved coercive force of 1300 oersted or higher.Type: GrantFiled: December 28, 1994Date of Patent: December 10, 1996Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Hideo Kaneko, Katsushi Tokunaga, Yoshio Tawara
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Patent number: 5554303Abstract: An improvement is proposed in the method for the preparation of a magnetic recording medium by forming a magnetic recording layer of a magnetic alloy on the surface of a non-magnetic substrate plate of, e.g., silicon so as to impart the magnetic recording medium with improved CSS (contact-start-stop) characteristics still without affecting the magnetic recording density. The improvement can be obtained by subjecting the surface of the substrate plate, prior to the formation of the magnetic recording layer, to a surface-roughening treatment which is performed either by a dry-process such as plasma etching and reactive ion etching or by a wet-process of anisotropic etching by using an aqueous solution of sodium or potassium hydroxide as the anisotropic etching solution. In particular, the plasma etching or reactive ion etching is conducted in the presence of a particulate scattering source body of aluminum, etc.Type: GrantFiled: March 2, 1995Date of Patent: September 10, 1996Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Hideo Kaneko, Katsushi Tokunaga, Yoshio Tawara, Noboru Tamai, Yasuaki Nakazato
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Patent number: 5514468Abstract: A magneto-optical recording medium having a layered structure consisting of a first dielectric layer, magnetic recording layer, second dielectric layer and reflecting layer successively formed on a transparent substrate plate can be imparted with improved performance relative to the recording sensitivity and the C/N ratio when the recording layer and the second dielectric layer each have such a thickness that the angle .delta. given by the equation .delta.=tan.sup.-1 (.epsilon./.theta.k), in which .epsilon. is the Kerr ellipticity of the regenerative light and .theta.k is the Kerr rotation angle, does not exceed 10.degree., the thickness of the recording layer being in the range from 8 nm to 13.5 nm and the thickness of the second dielectric layer satisfying the relationship given by the inequality0.06.ltoreq.nd/.lambda..ltoreq.0.14,in which d is the thickness of the second dielectric layer, .lambda.Type: GrantFiled: November 3, 1993Date of Patent: May 7, 1996Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Hideo Kaneko, Katsushi Tokunaga, Yoshio Tawara, Yoshiaki Shimizu, Tadao Nomura
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Patent number: 5151206Abstract: The present invention relates to novel acicular particles, processes for using the same, and magnetic materials prepared from such particles. In particular, the invention relates to an acicular particulate material containing iron carbide and having a high coercive force (Hc) an orientation property in a magnetic field.Type: GrantFiled: March 22, 1989Date of Patent: September 29, 1992Assignee: Daikin Industries, Ltd.Inventors: Kazuo Okamura, Ikuo Kitamura, Hideki Aomi, Satoshi Koyama, Katsushi Tokunaga, Yoshiyuki Shibuya, Shiego Daimon
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Patent number: 5118573Abstract: An improvement is obtained in the stability and recording density of a magneto-optical recording medium having a laminar structure on a transparent substrate plate successively consisting of a first dielectric layer, a magnetic recording layer, a second dielectric layer and a metallic light-reflecting layer by forming the dielectric layer with a unique and specific dielectric material which is an amorphous composite material comprising boron and hydrogen in a specified weight proportion formed by the method of plasma CVD or sputtering. The dielectric material can be a ternary composite of boron, hydrogen and nitrogen or quaternary composite of boron, hydrogen, nitrogen and silicon or carbon.Type: GrantFiled: October 25, 1990Date of Patent: June 2, 1992Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Yoshio Tawara, Katsushi Tokunaga, Tadao Nomura, Yoshiaki Shimizu, Yoshihiro Kubota, Meguru Kashida
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Patent number: 5026605Abstract: Iron carbide fine particles which have a coating layer of at least one metal compound selected from the group consisting of copper compound and manganese compound.Type: GrantFiled: April 27, 1989Date of Patent: June 25, 1991Assignee: Daikin Industries Ltd.Inventors: Ikuo Kitamura, Hideki Aomi, Satoshi Koyama, Katsushi Tokunaga, Kazuo Okamura
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Patent number: 4931198Abstract: Particles containing FeC are prepared by mixing (a) a boron compound or alkaline earth metal compound with (b) iron oxyhydroxide or iron oxide particles, or coating the former compound (a) to the latter particles (b), and then carburizing the mixture or coated particles with a carburizing agent.Type: GrantFiled: September 18, 1989Date of Patent: June 5, 1990Assignee: Daikin Industries Ltd.Inventors: Takuya Arase, Katsushi Tokunaga, Shigeo Daimon
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Patent number: 4842759Abstract: The present invention relates to novel acicular particles, processes for using the same, and magnetic materials prepared from such particles. In particular, the invention relates to an acicular particulate material containing iron carbide and having a high coercive force(Hc) an orientation property in a magnetic field.Type: GrantFiled: October 14, 1986Date of Patent: June 27, 1989Assignee: Daikin Industries, Ltd.Inventors: Kazuo Okamura, Ikuo Kitamura, Hideki Aomi, Satoshi Koyama, Katsushi Tokunaga, Yoshiyuki Shibuya, Shiego Daimon
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Patent number: 4668414Abstract: A process for producing acicular particles containing an iron carbide which comprises,(a) contacting or not contacting acicular oxyhydroxide or acicular iron oxide with a reducing agent containing no carbon atom and,(b) contacting the iron compound of the above (a) with a reducing-and-carbonizing agent containing carbon atom or a mixture thereof with a reducing agent containing no carbon atom,(provided that CO is excluded from the reducing-and-carbonizing agent of (b) when the contact in (a) is not conducted).Type: GrantFiled: October 22, 1985Date of Patent: May 26, 1987Assignee: Daikin Industries Ltd.Inventors: Kazuo Okamura, Ikuo Kitamura, Hideki Aomi, Satoshi Koyama, Katsushi Tokunaga