Patents by Inventor Katsushige Harada
Katsushige Harada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230137865Abstract: A method of forming a crystalline structure film containing strontium, titanium, and oxygen on a substrate, includes: forming an amorphous structure film on a surface of a titanium nitride film formed on a surface of the substrate, the amorphous structure film containing strontium and oxygen and having a titanium content adjusted so that a content ratio of titanium to strontium based on the number of atoms becomes a value in a range of 0 or more and less than 1.0; and obtaining a crystalline structure film containing strontium, titanium and oxygen and containing titanium diffused from the titanium nitride film by heating the substrate, on which the amorphous structure film is formed, at a temperature of 500 degrees C. or higher.Type: ApplicationFiled: October 26, 2022Publication date: May 4, 2023Inventors: Takayuki KARAKAWA, Kotaro MIYATANI, Hideo NAKAMURA, Katsushige HARADA, Yuichiro MOROZUMI
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Patent number: 11486043Abstract: There is provided a metal contamination prevention method performed by passing a metal chloride gas through a metal component having a surface covered with an inactive film formed of a chromium oxide, the method including: generating a chromium chloride (III) hexahydrate by supplying a hydrochloric acid to the inactive film covering the surface of the metal component and allowing the chromium oxide to react with the hydrochloric acid; removing a chromium from the inactive film by evaporating the chromium chloride (III) hexahydrate; and covering a surface of the inactive film with a compound containing a metal contained in the metal chloride gas.Type: GrantFiled: July 30, 2019Date of Patent: November 1, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Yoshihiro Takezawa, Shigeru Nakajima, Katsushige Harada, Yusuke Tachino
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Publication number: 20200040463Abstract: There is provided a metal contamination prevention method performed by passing a metal chloride gas through a metal component having a surface covered with an inactive film formed of a chromium oxide, the method including: generating a chromium chloride (III) hexahydrate by supplying a hydrochloric acid to the inactive film covering the surface of the metal component and allowing the chromium oxide to react with the hydrochloric acid; removing a chromium from the inactive film by evaporating the chromium chloride (III) hexahydrate; and covering a surface of the inactive film with a compound containing a metal contained in the metal chloride gas.Type: ApplicationFiled: July 30, 2019Publication date: February 6, 2020Inventors: Yoshihiro TAKEZAWA, Shigeru NAKAJIMA, Katsushige HARADA, Yusuke TACHINO
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Patent number: 9574269Abstract: A method and apparatus of forming a thin film using an organic metal compound gas and oxidizing agents are disclosed. The method includes performing a first film formation process of forming a thin film on an object to be processed using an organic metal compound gas and a first oxidizing agent; performing an annealing process of supplying a second oxidizing agent having stronger oxidizing power than the first oxidizing agent into the reaction chamber while an interior of the reaction chamber is heated to a predetermined temperature; and performing a second film formation process of forming a thin film on the thin film formed in the first thin film formation process using the organic metal compound gas and the second oxidizing agent.Type: GrantFiled: March 24, 2015Date of Patent: February 21, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Katsushige Harada, Susumu Takada
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Publication number: 20160281224Abstract: A method and apparatus of forming a thin film using an organic metal compound gas and oxidizing agents are disclosed. The method includes performing a first film formation process of forming a thin film on an object to be processed using an organic metal compound gas and a first oxidizing agent; performing an annealing process of supplying a second oxidizing agent having stronger oxidizing power than the first oxidizing agent into the reaction chamber while an interior of the reaction chamber is heated to a predetermined temperature; and performing a second film formation process of forming a thin film on the thin film formed in the first thin film formation process using the organic metal compound gas and the second oxidizing agent.Type: ApplicationFiled: March 24, 2015Publication date: September 29, 2016Inventors: Katsushige HARADA, Susumu TAKADA
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Patent number: 9293543Abstract: Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.Type: GrantFiled: October 2, 2013Date of Patent: March 22, 2016Assignees: TOKYO ELECTRON LIMITED, OSAKA UNIVERSITYInventors: Shuji Azumo, Yusaku Kashiwagi, Yuichiro Morozumi, Yu Wamura, Katsushige Harada, Kosuke Takahashi, Heiji Watanabe, Takayoshi Shimura, Takuji Hosoi
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Patent number: 9234275Abstract: Provided is a method of forming a film of metal compound of first and second materials on an object to be processed, one of the first and second materials being metal, which includes: supplying a raw material gas containing the first material to the object such that the first material is adsorbed onto the object; supplying a raw material gas containing the second material to the object with the first material adsorbed thereon such that the second material is adsorbed onto the object with the first material adsorbed thereon; and supplying a third material different from the first and second materials onto the first and second materials adsorbed onto the object such that the first to third materials are chemically combined with one another.Type: GrantFiled: December 11, 2013Date of Patent: January 12, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Yoshihiro Takezawa, Katsushige Harada
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Patent number: 9230799Abstract: A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.Type: GrantFiled: January 23, 2012Date of Patent: January 5, 2016Assignees: TOHOKU UNIVERSITY, Fuji Electric Co., Ltd., TOKYO ELECTRON LIMITEDInventors: Akinobu Teramoto, Hiroshi Kambayashi, Hirokazu Ueda, Yuichiro Morozumi, Katsushige Harada, Kazuhide Hasebe, Tadahiro Ohmi
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Publication number: 20150279683Abstract: Provided is a method of forming a TiSiN film on a surface of an object to be processed, the method including: repeating a first cycle a first predetermined number of times, the first cycle including supplying Ti raw material gas containing Ti raw material into a processing chamber, and supplying nitriding gas containing a nitridant into the processing chamber after the Ti raw material gas is supplied into the processing chamber; and repeating a second cycle a second predetermined number of times after repeating the first cycle the first predetermined number of times, the second cycle including supplying Si raw material gas containing Si raw material into the processing chamber, and supplying nitriding gas containing a nitridant into the processing chamber after the Si raw material gas is supplied into the processing chamber, wherein the Si raw material gas comprises an amine-based Si raw material gas.Type: ApplicationFiled: March 27, 2015Publication date: October 1, 2015Inventor: Katsushige HARADA
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Publication number: 20140367699Abstract: The method for fabricating a semiconductor device is to fabricate a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes a step of forming a gate insulating film. In the step, at least one film selected from the group consisting of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.Type: ApplicationFiled: September 2, 2014Publication date: December 18, 2014Applicants: TOHOKU UNIVERSITY, FUJI ELECTRIC CO., LTD., TOKYO ELECTRON LIMITEDInventors: Akinobu TERAMOTO, Hiroshi KAMBAYASHI, Hirokazu UEDA, Yuichiro MOROZUMI, Katsushige HARADA, Kazuhide HASEBE, Tadahiro OHMI
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Patent number: 8896097Abstract: Provided are a method of manufacturing a capacitor capable of achieving a high dielectric constant property and a low leakage current, a capacitor, and a method of forming a dielectric film used in the capacitor. The capacitor is fabricated by forming a lower electrode layer on a substrate; forming a first TiO2 film having an interface control function on the lower electrode layer; forming a ZrO2-based film on the first TiO2 film; performing an annealing process for crystallizing ZrO2 in the ZrO2-based film, after forming the ZrO2-based film; forming a second TiO2 film which serves as a capacity film on the ZrO2-based film; and forming an upper electrode layer on the second TiO2 film.Type: GrantFiled: February 6, 2013Date of Patent: November 25, 2014Assignee: Tokyo Electron LimitedInventors: Yu Wamura, Koji Akiyama, Shingo Hishiya, Katsushige Harada
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Patent number: 8815112Abstract: Disclosed is a method for processing a substrate including a first process and a second process. The first process comprises supporting the substrate formed with a titanium-containing film on its front surface and rear surface by a support unit which is rotatably installed; rotating the substrate along with the support unit; and supplying a first processing liquid containing hydrofluoric acid to the rear surface of the substrate thereby processing the rear surface of the substrate with the first processing liquid. The second process comprises supplying a second processing liquid containing ammonia hydrogen peroxide mixture to the rear surface of the substrate after the first process is completed, thereby processing the rear surface of the substrate with the second processing liquid.Type: GrantFiled: September 1, 2011Date of Patent: August 26, 2014Assignee: Tokyo Electron LimitedInventors: Tsuyoshi Mizuno, Hiromitsu Namba, Yuichiro Morozumi, Shingo Hishiya, Katsushige Harada, Fumiaki Hayase
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Publication number: 20140161706Abstract: Provided is a method of forming a film of metal compound of first and second materials on an object to be processed, one of the first and second materials being metal, which includes: supplying a raw material gas containing the first material to the object such that the first material is adsorbed onto the object; supplying a raw material gas containing the second material to the object with the first material adsorbed thereon such that the second material is adsorbed onto the object with the first material adsorbed thereon; and supplying a third material different from the first and second materials onto the first and second materials adsorbed onto the object such that the first to third materials are chemically combined with one another.Type: ApplicationFiled: December 11, 2013Publication date: June 12, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Yoshihiro TAKEZAWA, Katsushige HARADA
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Publication number: 20140094027Abstract: Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.Type: ApplicationFiled: October 2, 2013Publication date: April 3, 2014Applicants: OSAKA UNIVERSITY, TOKYO ELECTRON LIMITEDInventors: Shuji AZUMO, Yusaku KASHIWAGI, Yuichiro MOROZUMI, Yu WAMURA, Katsushige HARADA, Kosuke TAKAHASHI, Heiji WATANABE, Takayoshi SHIMURA, Takuji HOSOI
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Patent number: 8642127Abstract: According to the method of forming a titanium nitride film, first, an inside of a reaction pipe accommodating a semiconductor wafer is heated up to 200° C. to 350° C. by using a temperature increasing heater. Then, the titanium nitride film is formed on the semiconductor wafer by supplying a film forming gas including a titanium raw material into the reaction pipe. Methylcyclopentadienyl tris(dimethylamino)titanium that does not include a chlorine atom and includes titanium is used as the titanium raw material.Type: GrantFiled: February 24, 2012Date of Patent: February 4, 2014Assignee: Tokyo Electron LimitedInventors: Yuichiro Morozumi, Shingo Hishiya, Katsushige Harada
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Publication number: 20130292700Abstract: A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.Type: ApplicationFiled: January 23, 2012Publication date: November 7, 2013Applicants: TOHOKU UNIVERSITY, TOKYO ELECTRON LIMTED, Advanced Power Device Research AssociationInventors: Akinobu Teramoto, Hiroshi Kambayashi, Hirokazu Ueda, Yuichiro Morozumi, Katsushige Harada, Kazuhide Hasebe, Tadahiro Ohmi
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Patent number: 8389421Abstract: When an object to be processed is transferred into a process chamber capable of keeping a vacuum and an interior of the process chamber is kept in a vacuum state, the film formation method includes performing forming a first ZrO film on the object to be processed by supplying a zirconium material and an oxidizing agent in the order listed above into the process chamber and forming a second ZrO film doped with Si on the object to be processed by supplying the zirconium material, a silicon material, and the oxidizing agent in the order listed above into the process chamber, in such a way that a number of times the forming the first ZrO film is performed and a number of times the forming the second ZrO film is performed are adjusted, respectively, to form a zirconia-based film having a predetermined film thickness while controlling a Si concentration in the film.Type: GrantFiled: May 25, 2011Date of Patent: March 5, 2013Assignee: Tokyo Electron LimitedInventors: Katsushige Harada, Yuichiro Morozumi, Shingo Hishiya
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Patent number: 8336487Abstract: The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.Type: GrantFiled: April 27, 2011Date of Patent: December 25, 2012Assignee: Tokyo Electron LimitedInventors: Yoshihiro Ishida, Katsushige Harada, Takuya Sugawara
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Publication number: 20120219710Abstract: According to the method of forming a titanium nitride film, first, an inside of a reaction pipe accommodating a semiconductor wafer is heated up to 200° C. to 350° C. by using a temperature increasing heater. Then, the titanium nitride film is formed on the semiconductor wafer by supplying a film forming gas including a titanium raw material into the reaction pipe. Methylcyclopentadienyl tris(dimethylamino)titanium that does not include a chlorine atom and includes titanium is used as the titanium raw material.Type: ApplicationFiled: February 24, 2012Publication date: August 30, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Yuichiro MOROZUMI, Shingo HISHIYA, Katsushige HARADA
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Publication number: 20120067846Abstract: Disclosed is a method for processing a substrate including a first process and a second process. The first process comprises supporting the substrate formed with a titanium-containing film on its front surface and rear surface by a support unit which is rotatably installed; rotating the substrate along with the support unit; and supplying a first processing liquid containing hydrofluoric acid to the rear surface of the substrate thereby processing the rear surface of the substrate with the first processing liquid. The second process comprises supplying a second processing liquid containing ammonia hydrogen peroxide mixture to the rear surface of the substrate after the first process is completed, thereby processing the rear surface of the substrate with the second processing liquid.Type: ApplicationFiled: September 1, 2011Publication date: March 22, 2012Inventors: Tsuyoshi Mizuno, Hiromitsu Namba, Yuichiro Morozumi, Shingo Hishiya, Katsushige Harada, Fumiaki Hayase