Abstract: A composite substrate in which the surface of the insulating layer is not influenced by the electrode layer and which requires neither a grinding process nor a sol-gel process, is easy to produce and can provide a thin-film EL device having a high display quality when used therein; a thin-film EL device using the substrate; and a production process for the device. The thin-film EL device is produced by forming a luminescent layer, other insulating layer and other electrode layer successively on a composite substrate comprising a substrate; an electrode layer embedded in the substrate in such a manner that the electrode layer and the substrate are in one plane; and an insulating layer formed on the surface of a composite comprising the substrate and the electrode layer.

Abstract: A thermal head including a protection layer having mutually opposed first and second surfaces, said first surface having a printing surface which is brought into contact with a heat sensitive record medium and is protruded from the remaining portion of the first surface of the protection layer, a heat generating sections including resistors and electrodes connected to the electrodes and provided on said second surface of the protection layer at said protruded printing surface, a heat control section including a heat storage layer and a heat conduction layer and provided on said heat generating section, and a driving IC connected to said electrodes. In order to improve the mechanical strength of the thermal head, a reinforcing layer made of a glass is provided on said first surface of the protection layer except for said printing surface such that a surface of said reinforcing layer is not higher than said first surface of the protection layer at said protruded printing surface.

Abstract: In conjunction with a recording medium for recording and reading information by utilizing the construction of AFM or STM and the polarization reversal of a ferroelectric material as well as an information processing apparatus having the recording medium, an object of the invention is to tailor the medium noiseless and sufficiently reliable to withstand repetitive data rewriting. The recording medium has a ferroelectric layer having unidirectionally oriented crystal axes on a substrate, and the ferroelectric layer has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface. A protective layer or a lubricating layer may be disposed on the surface of the ferroelectric layer.

Abstract: A hybrid (composite) integrated circuit element comprises a substrate, a thin film type integrated circuit formed on a substrate through a thin film process, and a lamination type passive circuit element such as a capacitor, inductor, resitance and a combination thereof formed on the integrated circuit. During the firing of passive circuit element in a hydrogen atmosphere, the semiconductor layer which constitutes the integrated circuit is also heat annealed. Various substrates can be used as the substrate, for example, quartz, ceramic and a cheap semiconductor substrate which has not been treated with a mirror-grinding by the use of a glass layer.

Abstract: A cold cathode electron source element having a cold cathode on a substrate. The cold cathode has dispersed in a cold cathode base particles of a conductive material having a lower work function than the base and a particle size which is sufficiently smaller than the thickness of the cold cathode. The element can be driven with a low voltage to induce high emission current in a stable manner. The cold cathode is easily processable. The element can have an increased surface area.

Abstract: The invention provides an oxide thin film in the form of an epitaxial film of the composition: Zr.sub.1-x R.sub.x O.sub.2-.delta. wherein R is a rare earth metal inclusive of Y, x=0 to 0.75, preferably x=0.20 to 0.50, formed on a surface of a single crystal silicon substrate. A rocking curve of the film has a half-value width of up to 1.50.degree.. The film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm. An epitaxial film of the composition ZrO.sub.2 is constructed by unidirectionally oriented crystals. When a functional film is to be formed on the oxide thin film serving as a buffer film, an adequately epitaxially grown functional film of quality is available.Particularly when the single crystal substrate is rotated within its plane, an oxide thin film of uniform high quality having an area as large as 10 cm.sup.2 or more is obtained.

Abstract: A cold cathode electron source element having a cold cathode on a substrate. The cold cathode has dispersed in a cold cathode base particles of a conductive material having a lower work function than the base and a particle size which is sufficiently smaller than the thickness of the cold cathode. The element can be driven with a low voltage to induce high emission current in a stable manner. The cold cathode is easily processable. The element can have an increased surface area.

Abstract: A hybrid (composite) integrated circuit element comprises a substrate, a thin film type integrated circuit formed on a substrate through a thin film process, and a lamination type passive circuit element such as a capacitor, inductor, resitance and a combination thereof formed on the integrated circuit. During the firing of passive circuit element in a hydrogen atmosphere, the semiconductor layer which constitutes the integrated circuit is also heat annealed. Various substrates can be used as the substrate, for example, quartz, ceramic and a cheap semiconductor substrate which has not been treated with a mirror-grinding by the use of a glass layer.

Abstract: A thermal pen tip comprising a heat reserve layer formed on an insulating substrate; a resistance layer for heating formed on said heat reserve layer; and a protective layer formed on said resistance layer, wherein said heat reserve layer has a convex top having a curvature and a flat surface on said convex top, so as to have a size corresponding substantially to a width of a line and said resistance layer for heating is formed on said flat surface of said heat reserve layer.

Abstract: The epitaxial growth of boron-phosphorous semiconductors can be accomplished by chemically reacting the gas materials diborane and phosphorous trichloride. The preferable temperature of the substrate in 880.degree. C.-1,110.degree. C. and the preferable ratio of the phosphorous trichloride to diborane in mol is 2-200. Use is made of a composite substrate.

Abstract: A thermal printing head for printing alphanumeric characters on a thermally-responsive medium, the head being faced with a pattern of heat generating "dot" elements electrically insulated from one another and having conductive leads, with means for connecting the leads selectively to a source of electric current. The heat generating elements are formed of a film of boron phosphide. Preferably the leads are also formed of boron phosphide, integral with the elements, but "doped" to secure a high degree of conductivity.