Abstract: A wafer processing method is provided that includes the steps of heating a silicon wafer containing oxygen and irradiating an infrared ray having a wavelength within a range of 7-25 ?m on the silicon wafer, and controlling formation of oxygen precipitates within the silicon wafer by selectively setting a heating temperature for heating the silicon wafer and an irradiation intensity of the infrared ray.

Abstract: A classification apparatus for the semiconductor substrate is provided with a bow measuring section which accepts silicon substrates and measures respective bows thereof. The classification apparatus is also provided with a bow judging section which, based on one or more standard value(s) set in advance, checks a measurement result by the bow measuring section against the standard value(s). The bow judging section judges to which of ranges defined based on the standard value(s) of the bow the measurement result by the bow measuring section belongs. Further, the classification apparatus is provided with a sorting section which accepts the silicon substrate having been measured by the bow measuring section and sorts the accepted silicon substrates based on the judgment results by the bow judging section. In other words, silicon substrates are grouped according to the bows by the sorting section. Then, respective silicon substrates are discharged in a grouped state.

Abstract: A classification apparatus for the semiconductor substrate is provided with a bow measuring section which accepts silicon substrates and measures respective bows thereof. The classification apparatus is also provided with a bow judging section which, based on one or more standard value(s) set in advance, checks a measurement result by the bow measuring section against the standard value(s). The bow judging section judges to which of ranges defined based on the standard value(s) of the bow the measurement result by the bow measuring section belongs. Further, the classification apparatus is provided with a sorting section which accepts the silicon substrate having been measured by the bow measuring section and sorts the accepted silicon substrates based on the judgment results by the bow judging section. In other words, silicon substrates are grouped according to the bows by the sorting section. Then, respective silicon substrates are discharged in a grouped state.

Abstract: A wafer processing method is provided that includes the steps of heating a silicon wafer containing oxygen and irradiating an infrared ray having a wavelength within a range of 7-25 ?m on the silicon wafer, and controlling formation of oxygen precipitates within the silicon wafer by selectively setting a heating temperature for heating the silicon wafer and an irradiation intensity of the infrared ray.

Abstract: A semiconductor substrate of the present invention is a DSP wafer or Semi-DSP wafer (FIG. 2) having a flatness of an SFQR value ≦70 (nm) and containing boron at a concentration not lower than 5×1016 (atoms/cm3) nor higher than 2×1017 (atoms/cm3) within 95% or more of rectangular regions of 25×8 (mm2) arranged on a front face of the substrate. Specifically, a silicon crystal layer by an epitaxial growth is formed on a front face of a silicon substrate having the above substrate boron concentration.