Abstract: A sputtering target material includes a copper alloy made of an oxygen free copper with a purity of 99.99% or more doped with Ag of 200 to 2000 ppm. The sputtering target material is formed by casting and rolling. An average grain size of crystal is 30 to 100 ?m. A ratio (220)/(111) which is a ratio of an orientation ratio of (220) plane to an orientation ratio of (111) plane calculated based on a peak intensity measurement of an X-ray diffraction at a sputtering surface is 6 or less and a standard deviation indicating a dispersion in the ratio (220)/(111) is 10 or less.

Abstract: A copper sputtering target material includes a sputter surface formed of a copper material including one crystal orientation plane and other crystal orientation planes. By application of accelerated specified inert gas ions, the one crystal orientation plane emits sputter particles with energy greater than energy of sputter particles sputtered out of the other crystal orientation planes. The occupying proportion of the one crystal orientation plane to the sum of the one crystal orientation plane and the other crystal orientation planes is not less than 15%.