Abstract: A filling method according to one aspect of the present disclosure is a method of filling a recess formed in a surface of a substrate with a metal oxide film. The method includes forming the metal oxide film by supplying a metallic raw material gas and an oxidant to the recess, and etching a part of the metal oxide film by supplying an etching gas including at least one selected from a group including SOCl2 and (COCl)2 to the metal oxide film.

Abstract: A selective film forming method includes: preparing a substrate including a first film having a first surface and a second film having a second surface, the second film being different from the first film; selectively adsorbing a secondary alcohol gas and/or a tertiary alcohol gas to the second surface; and selectively forming a film on the first surface by supplying at least a raw material gas.

Abstract: An object of the present invention is to provide a technique for delaying disintegration of a capsule by blending a certain component in a core of the capsule, and to increase the degree of freedom in capsule design. The present invention relates to a delayed disintegration-type seamless capsule that is a seamless capsule including a core, one or more intermediate layers formed on the core, and an outermost layer formed on the intermediate layers, wherein the core contains an active substance, an amphoteric surfactant, and a fat having a melting point of 40° C. or more, at least one layer of the intermediate layers contains a fat having a melting point of 45° C. or more, and the outermost layer contains a water-soluble natural polymer. The present invention also relates to a method for producing the same.

Abstract: A gas introduction structure includes: a gas introduction pipe inserted in a process chamber; and a discharge part covering an end portion of the gas introduction pipe at a side of the process chamber, and configured to discharge a gas supplied to the gas introduction pipe into the process chamber, wherein the discharge part includes a porous portion formed of a porous body, and a dense portion disposed at a location closer to a leading end of the discharge part than the porous portion and having a porosity lower than that of the porous portion.

Abstract: A substrate processing apparatus includes a processing container configured to accommodate and process a substrate, an exhaust pipe connected to the processing container, an evacuation part configured to evacuate an interior of the processing container via the exhaust pipe, an exhaust pipe coating gas nozzle provided in the vicinity of the exhaust pipe inside the processing container and configured to supply at least one of a silicon-containing gas and an oxidizing gas into the exhaust pipe via the processing container, and a heating part configured to heat the processing container.

Abstract: There is provided a substrate processing apparatus that includes: a process chamber in which a substrate is accommodated to be processed; a plurality of quartz gas nozzles configured to supply, into the process chamber, a plurality of process gasses capable of generating reaction products by reacting the plurality of process gasses with each other; an evacuation device configured to evacuate an interior portion of the process chamber; a bypass pipe configured to connect a quartz gas nozzle among the plurality of quartz gas nozzles to the evacuation device; and a coating gas nozzle configured to supply at least one of a silicon-containing gas and an oxidizing gas capable of forming a SiO2 coating film inside the quartz gas nozzle connected to the evacuation device in a state in which the inside of the quartz gas nozzle connected to the evacuation device is evacuated by the evacuation device.

Abstract: A gas introduction structure includes: a gas introduction pipe inserted in a process chamber; and a discharge part covering an end portion of the gas introduction pipe at a side of the process chamber, and configured to discharge a gas supplied to the gas introduction pipe into the process chamber, wherein the discharge part includes a porous portion formed of a porous body, and a dense portion disposed at a location closer to a leading end of the discharge part than the porous portion and having a porosity lower than that of the porous portion.

Abstract: There is provided a film forming apparatus for forming a silicon nitride film on a substrate by having a precursor gas containing silicon to react with a reaction gas containing nitrogen, including: a processing container configured to form a vacuum atmosphere; a substrate mounting part installed in the processing container; a precursor gas supply part configured to supply a precursor gas into the processing container; a reaction gas supply part configured to supply a reaction gas containing nitrogen into the processing container; and an ultraviolet irradiating part configured to excite the reaction gas before the reaction gas reacts with the precursor gas, wherein a substrate on the substrate mounting part is not irradiated with an ultraviolet ray emitted from the ultraviolet irradiating part.

Abstract: A film forming apparatus includes a first supply unit configured to supply a first reaction gas into the reaction vessel under an environment of a first pressure, a second supply unit configured to supply a second reaction gas into the reaction vessel under an environment of a second pressure lower than the first pressure, a first vacuum exhaust mechanism connected to the reaction vessel through a first exhaust path in order to create the environment of the first pressure within the reaction vessel, a second vacuum exhaust mechanism connected to the reaction vessel through a second exhaust path in order to create the environment of the second pressure, the second vacuum exhaust mechanism being lower in an operation pressure zone than the first vacuum exhaust mechanism, and a switching unit configured to switch exhaust destinations of the reaction vessel between the first path and the second path.

Abstract: There is provided a film forming apparatus for forming a silicon nitride film on a substrate by having a precursor gas containing silicon to react with a reaction gas containing nitrogen, including: a processing container configured to form a vacuum atmosphere; a substrate mounting part installed in the processing container, a precursor gas supply part configured to supply a precursor gas into the processing container, a reaction gas supply part configured to supply a reaction gas containing nitrogen into the processing container, and an ultraviolet irradiating part configured to excite the reaction gas before the reaction gas reacts with the precursor gas, wherein a substrate on the substrate mounting part is not irradiated with an ultraviolet ray emitted from the ultraviolet irradiating part.

Abstract: There is provided a substrate processing apparatus, including: a process vessel configured to accommodate and process a substrate; a first injector located inside the process vessel and configured to discharge a first processing gas into the process vessel; a processing gas supply pipe located outside of the process vessel and connected to the first injector and configured to supply the first processing gas to the first injector; a first valve located in the processing gas supply pipe; an exhaust part configured to exhaust the process vessel; a bypass pipe branched at a predetermined position closer to the process vessel than the first valve in the processing gas supply pipe and configured to connect the processing gas supply pipe to the exhaust part; and a second valve located in the bypass pipe.

Abstract: A substrate processing apparatus includes a processing container configured to accommodate and process a substrate, an exhaust pipe connected to the processing container, an evacuation part configured to evacuate an interior of the processing container via the exhaust pipe, an exhaust pipe coating gas nozzle provided in the vicinity of the exhaust pipe inside the processing container and configured to supply at least one of a silicon-containing gas and an oxidizing gas into the exhaust pipe via the processing container, and a heating part configured to heat the processing container.

Abstract: There is provided a technique that includes: a process chamber in which a substrate is accommodated to be processed; a plurality of quartz gas nozzles configured to supply, into the process chamber, a plurality of process gasses capable of generating reaction products by reacting the plurality of process gasses with each other; an evacuation device configured to evacuate an interior portion of the process chamber; a bypass pipe configured to connect a quartz gas nozzle among the plurality of quartz gas nozzles to the evacuation device; and a coating gas nozzle configured to supply at least one of a silicon-containing gas and an oxidizing gas capable of forming a SiO2 coating film inside the quartz gas nozzle connected to the evacuation device in a state in which the inside of the quartz gas nozzle connected to the evacuation device is evacuated by the evacuation device.

Abstract: A film forming apparatus includes a first supply unit configured to supply a first reaction gas into the reaction vessel under an environment of a first pressure, a second supply unit configured to supply a second reaction gas into the reaction vessel under an environment of a second pressure lower than the first pressure, a first vacuum exhaust mechanism connected to the reaction vessel through a first exhaust path in order to create the environment of the first pressure within the reaction vessel, a second vacuum exhaust mechanism connected to the reaction vessel through a second exhaust path in order to create the environment of the second pressure, the second vacuum exhaust mechanism being lower in an operation pressure zone than the first vacuum exhaust mechanism, and a switching unit configured to switch exhaust destinations of the reaction vessel between the first path and the second path.

Abstract: A method for using a heat processing apparatus of a batch type includes performing a preparatory process for removing aluminum present as a metal impurity from a quartz inner surface of a process container, and performing a main heat process on product substrates held on a holder member in the process container after the preparatory process. The preparatory process includes placing a plurality of dummy substrates for allowing the metal impurity to be deposited thereon inside a process container with no product substrates placed therein; then, supplying a chlorine-containing gas and water vapor into the process container and heating the quartz inner surface of the process container at a process temperature, thereby applying a baking process onto the quartz inner surface to discharge the metal impurity from the quartz inner surface and deposit the metal impurity onto the dummy substrates; and then, unloading the dummy substrates with the metal impurity deposited thereon from the reaction container.

Abstract: A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.

Abstract: A vertical heat processing apparatus for forming a high dielectric constant film of a metal oxide by deposition includes a reaction container configured to accommodate a plurality of target substrates at intervals in a vertical direction; a support member configured to support the target substrates inside the reaction container; a heater configured to heat the target substrates inside the reaction container; an exhaust system configured to exhaust gas from inside the reaction container; and a gas supply system configured to supply a metal source gas and an oxidizing gas into the reaction container, wherein the gas supply system includes a gas nozzle disposed inside the reaction container, and the gas nozzle is made of a metal consisting mainly of titanium.

Abstract: A method for using a heat processing apparatus of a batch type includes performing a preparatory process for removing aluminum present as a metal impurity from a quartz inner surface of a process container, and performing a main heat process on product substrates held on a holder member in the process container after the preparatory process. The preparatory process includes placing a plurality of dummy substrates for allowing the metal impurity to be deposited thereon inside a process container with no product substrates placed therein; then, supplying a chlorine-containing gas and water vapor into the process container and heating the quartz inner surface of the process container at a process temperature, thereby applying a baking process onto the quartz inner surface to discharge the metal impurity from the quartz inner surface and deposit the metal impurity onto the dummy substrates; and then, unloading the dummy substrates with the metal impurity deposited thereon from the reaction container.

Abstract: A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.

Abstract: A method for removing a metal impurity from a quartz component part in a heat processing apparatus of a batch type includes placing a plurality of dummy substrates for allowing the metal impurity to be deposited thereon inside a process container with no product target substrates placed therein; then, supplying a chlorine-containing gas and water vapor into the process container and heating the quartz inner surface of the process container at a process temperature, thereby applying a baking process onto the quartz inner surface to discharge the metal impurity from the quartz inner surface and deposit the metal impurity onto the dummy substrates; and then, unloading the dummy substrates with the metal impurity deposited thereon from the reaction container.