Patents by Inventor Katsutoshi Ishii

Katsutoshi Ishii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10876204
    Abstract: A substrate processing apparatus includes a processing container configured to accommodate and process a substrate, an exhaust pipe connected to the processing container, an evacuation part configured to evacuate an interior of the processing container via the exhaust pipe, an exhaust pipe coating gas nozzle provided in the vicinity of the exhaust pipe inside the processing container and configured to supply at least one of a silicon-containing gas and an oxidizing gas into the exhaust pipe via the processing container, and a heating part configured to heat the processing container.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: December 29, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Katsutoshi Ishii
  • Patent number: 10799896
    Abstract: There is provided a substrate processing apparatus that includes: a process chamber in which a substrate is accommodated to be processed; a plurality of quartz gas nozzles configured to supply, into the process chamber, a plurality of process gasses capable of generating reaction products by reacting the plurality of process gasses with each other; an evacuation device configured to evacuate an interior portion of the process chamber; a bypass pipe configured to connect a quartz gas nozzle among the plurality of quartz gas nozzles to the evacuation device; and a coating gas nozzle configured to supply at least one of a silicon-containing gas and an oxidizing gas capable of forming a SiO2 coating film inside the quartz gas nozzle connected to the evacuation device in a state in which the inside of the quartz gas nozzle connected to the evacuation device is evacuated by the evacuation device.
    Type: Grant
    Filed: April 18, 2018
    Date of Patent: October 13, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Katsutoshi Ishii
  • Publication number: 20200211866
    Abstract: A gas introduction structure includes: a gas introduction pipe inserted in a process chamber; and a discharge part covering an end portion of the gas introduction pipe at a side of the process chamber, and configured to discharge a gas supplied to the gas introduction pipe into the process chamber, wherein the discharge part includes a porous portion formed of a porous body, and a dense portion disposed at a location closer to a leading end of the discharge part than the porous portion and having a porosity lower than that of the porous portion.
    Type: Application
    Filed: December 24, 2019
    Publication date: July 2, 2020
    Inventor: Katsutoshi ISHII
  • Patent number: 10559460
    Abstract: There is provided a film forming apparatus for forming a silicon nitride film on a substrate by having a precursor gas containing silicon to react with a reaction gas containing nitrogen, including: a processing container configured to form a vacuum atmosphere; a substrate mounting part installed in the processing container; a precursor gas supply part configured to supply a precursor gas into the processing container; a reaction gas supply part configured to supply a reaction gas containing nitrogen into the processing container; and an ultraviolet irradiating part configured to excite the reaction gas before the reaction gas reacts with the precursor gas, wherein a substrate on the substrate mounting part is not irradiated with an ultraviolet ray emitted from the ultraviolet irradiating part.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: February 11, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akira Shimizu, Katsutoshi Ishii, Akinobu Teramoto, Tomoyuki Suwa, Yoshinobu Shiba
  • Patent number: 10535501
    Abstract: A film forming apparatus includes a first supply unit configured to supply a first reaction gas into the reaction vessel under an environment of a first pressure, a second supply unit configured to supply a second reaction gas into the reaction vessel under an environment of a second pressure lower than the first pressure, a first vacuum exhaust mechanism connected to the reaction vessel through a first exhaust path in order to create the environment of the first pressure within the reaction vessel, a second vacuum exhaust mechanism connected to the reaction vessel through a second exhaust path in order to create the environment of the second pressure, the second vacuum exhaust mechanism being lower in an operation pressure zone than the first vacuum exhaust mechanism, and a switching unit configured to switch exhaust destinations of the reaction vessel between the first path and the second path.
    Type: Grant
    Filed: May 29, 2014
    Date of Patent: January 14, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yamato Tonegawa, Katsutoshi Ishii
  • Publication number: 20190074177
    Abstract: There is provided a film forming apparatus for forming a silicon nitride film on a substrate by having a precursor gas containing silicon to react with a reaction gas containing nitrogen, including: a processing container configured to form a vacuum atmosphere; a substrate mounting part installed in the processing container, a precursor gas supply part configured to supply a precursor gas into the processing container, a reaction gas supply part configured to supply a reaction gas containing nitrogen into the processing container, and an ultraviolet irradiating part configured to excite the reaction gas before the reaction gas reacts with the precursor gas, wherein a substrate on the substrate mounting part is not irradiated with an ultraviolet ray emitted from the ultraviolet irradiating part.
    Type: Application
    Filed: September 6, 2018
    Publication date: March 7, 2019
    Inventors: Akira SHIMIZU, Katsutoshi ISHII, Akinobu TERAMOTO, Tomoyuki SUWA, Yoshinobu SHIBA
  • Publication number: 20180312967
    Abstract: There is provided a substrate processing apparatus, including: a process vessel configured to accommodate and process a substrate; a first injector located inside the process vessel and configured to discharge a first processing gas into the process vessel; a processing gas supply pipe located outside of the process vessel and connected to the first injector and configured to supply the first processing gas to the first injector; a first valve located in the processing gas supply pipe; an exhaust part configured to exhaust the process vessel; a bypass pipe branched at a predetermined position closer to the process vessel than the first valve in the processing gas supply pipe and configured to connect the processing gas supply pipe to the exhaust part; and a second valve located in the bypass pipe.
    Type: Application
    Filed: April 23, 2018
    Publication date: November 1, 2018
    Inventor: Katsutoshi ISHII
  • Publication number: 20180312969
    Abstract: A substrate processing apparatus includes a processing container configured to accommodate and process a substrate, an exhaust pipe connected to the processing container, an evacuation part configured to evacuate an interior of the processing container via the exhaust pipe, an exhaust pipe coating gas nozzle provided in the vicinity of the exhaust pipe inside the processing container and configured to supply at least one of a silicon-containing gas and an oxidizing gas into the exhaust pipe via the processing container, and a heating part configured to heat the processing container.
    Type: Application
    Filed: April 25, 2018
    Publication date: November 1, 2018
    Inventor: Katsutoshi ISHII
  • Publication number: 20180304286
    Abstract: There is provided a technique that includes: a process chamber in which a substrate is accommodated to be processed; a plurality of quartz gas nozzles configured to supply, into the process chamber, a plurality of process gasses capable of generating reaction products by reacting the plurality of process gasses with each other; an evacuation device configured to evacuate an interior portion of the process chamber; a bypass pipe configured to connect a quartz gas nozzle among the plurality of quartz gas nozzles to the evacuation device; and a coating gas nozzle configured to supply at least one of a silicon-containing gas and an oxidizing gas capable of forming a SiO2 coating film inside the quartz gas nozzle connected to the evacuation device in a state in which the inside of the quartz gas nozzle connected to the evacuation device is evacuated by the evacuation device.
    Type: Application
    Filed: April 18, 2018
    Publication date: October 25, 2018
    Inventor: Katsutoshi ISHII
  • Publication number: 20140356550
    Abstract: A film forming apparatus includes a first supply unit configured to supply a first reaction gas into the reaction vessel under an environment of a first pressure, a second supply unit configured to supply a second reaction gas into the reaction vessel under an environment of a second pressure lower than the first pressure, a first vacuum exhaust mechanism connected to the reaction vessel through a first exhaust path in order to create the environment of the first pressure within the reaction vessel, a second vacuum exhaust mechanism connected to the reaction vessel through a second exhaust path in order to create the environment of the second pressure, the second vacuum exhaust mechanism being lower in an operation pressure zone than the first vacuum exhaust mechanism, and a switching unit configured to switch exhaust destinations of the reaction vessel between the first path and the second path.
    Type: Application
    Filed: May 29, 2014
    Publication date: December 4, 2014
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yamato TONEGAWA, Katsutoshi ISHII
  • Patent number: 8834817
    Abstract: A method for using a heat processing apparatus of a batch type includes performing a preparatory process for removing aluminum present as a metal impurity from a quartz inner surface of a process container, and performing a main heat process on product substrates held on a holder member in the process container after the preparatory process. The preparatory process includes placing a plurality of dummy substrates for allowing the metal impurity to be deposited thereon inside a process container with no product substrates placed therein; then, supplying a chlorine-containing gas and water vapor into the process container and heating the quartz inner surface of the process container at a process temperature, thereby applying a baking process onto the quartz inner surface to discharge the metal impurity from the quartz inner surface and deposit the metal impurity onto the dummy substrates; and then, unloading the dummy substrates with the metal impurity deposited thereon from the reaction container.
    Type: Grant
    Filed: February 17, 2010
    Date of Patent: September 16, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Masahisa Watanabe, Katsutoshi Ishii, Tetsuya Shibata
  • Patent number: 8394200
    Abstract: A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.
    Type: Grant
    Filed: November 25, 2008
    Date of Patent: March 12, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Hiroyuki Matsuura, Toshiki Takahashi, Jun Sato, Katsuyoshi Aikawa, Katsutoshi Ishii
  • Publication number: 20100186667
    Abstract: A vertical heat processing apparatus for forming a high dielectric constant film of a metal oxide by deposition includes a reaction container configured to accommodate a plurality of target substrates at intervals in a vertical direction; a support member configured to support the target substrates inside the reaction container; a heater configured to heat the target substrates inside the reaction container; an exhaust system configured to exhaust gas from inside the reaction container; and a gas supply system configured to supply a metal source gas and an oxidizing gas into the reaction container, wherein the gas supply system includes a gas nozzle disposed inside the reaction container, and the gas nozzle is made of a metal consisting mainly of titanium.
    Type: Application
    Filed: January 8, 2010
    Publication date: July 29, 2010
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Katsutoshi ISHII, Yoshihiro Ishida, Katsushige Harada, Haruhiko Furuya
  • Publication number: 20100135877
    Abstract: A method for using a heat processing apparatus of a batch type includes performing a preparatory process for removing aluminum present as a metal impurity from a quartz inner surface of a process container, and performing a main heat process on product substrates held on a holder member in the process container after the preparatory process. The preparatory process includes placing a plurality of dummy substrates for allowing the metal impurity to be deposited thereon inside a process container with no product substrates placed therein; then, supplying a chlorine-containing gas and water vapor into the process container and heating the quartz inner surface of the process container at a process temperature, thereby applying a baking process onto the quartz inner surface to discharge the metal impurity from the quartz inner surface and deposit the metal impurity onto the dummy substrates; and then, unloading the dummy substrates with the metal impurity deposited thereon from the reaction container.
    Type: Application
    Filed: February 17, 2010
    Publication date: June 3, 2010
    Inventors: Masahisa Watanabe, Katsutoshi Ishii, Tetsuya Shibata
  • Publication number: 20090078201
    Abstract: A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.
    Type: Application
    Filed: November 25, 2008
    Publication date: March 26, 2009
    Inventors: Hiroyuki Matsuura, Toshiki Takahashi, Jun Sato, Katsuyoshi Aikawa, Katsutoshi Ishii
  • Publication number: 20090041650
    Abstract: A method for removing a metal impurity from a quartz component part in a heat processing apparatus of a batch type includes placing a plurality of dummy substrates for allowing the metal impurity to be deposited thereon inside a process container with no product target substrates placed therein; then, supplying a chlorine-containing gas and water vapor into the process container and heating the quartz inner surface of the process container at a process temperature, thereby applying a baking process onto the quartz inner surface to discharge the metal impurity from the quartz inner surface and deposit the metal impurity onto the dummy substrates; and then, unloading the dummy substrates with the metal impurity deposited thereon from the reaction container.
    Type: Application
    Filed: August 5, 2008
    Publication date: February 12, 2009
    Inventors: Masahisa Watanabe, Katsutoshi Ishii, Tetsuya Shibata
  • Publication number: 20070240644
    Abstract: A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.
    Type: Application
    Filed: March 22, 2007
    Publication date: October 18, 2007
    Inventors: Hiroyuki Matsuura, Toshiki Takahashi, Jun Sato, Katsuyoshi Aikawa, Katsutoshi Ishii
  • Patent number: 7211295
    Abstract: Disclosed herein is a silicon dioxide film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas pretreating step of energizing a process gas to produce water, the process gas including hydrogen, chlorine, and oxygen gas; and a film forming step of forming a silicon dioxide film by supplying the the process gas that has been energized to produce water into the heated reaction chamber to oxidize the silicon layer of the object to be processed.
    Type: Grant
    Filed: April 23, 2004
    Date of Patent: May 1, 2007
    Assignee: Tokyo Electron Limited
    Inventors: Yutaka Takahashi, Hitoshi Kato, Katsutoshi Ishii, Kazutoshi Miura
  • Publication number: 20070048145
    Abstract: A vacuum evacuation device 2 of the invention comprises a vacuum pump 4,5 for exhausting a gas G2 in a process chamber 21 into which a process gas G1 is introduced and in which a process reaction is performed, to form a vacuum in said process chamber 21; and a control means 6 for performing a first control that regulates the rotational speed of said vacuum pump 4,5 such that a pressure condition in said process chamber 21 reaches a pressure condition suitable for said process reaction during said process reaction, wherein said control means 6 calculates a specified rotational speed for said vacuum pump 4,5 based on process information related to said process reaction, and performs a second control that brings said vacuum pump 4,5 to said specified rotational speed before said first control. The vacuum evacuation device 2 is capable of bringing the pressure in a process chamber 21 to the target pressure in a short period without a vacuum pump 4,5 being overloaded, regardless of the process reaction condition.
    Type: Application
    Filed: August 10, 2006
    Publication date: March 1, 2007
    Inventors: Katsutoshi Ishii, Ken Nakao, Takanobu Asano, Kota Umezawa, Hiroaki Ogamino, Tadashi Urata, Katsuaki Usui, Masafumi Inoue, Shinichi Sekiguchi, Hironobu Yamasaki
  • Patent number: D564462
    Type: Grant
    Filed: June 2, 2006
    Date of Patent: March 18, 2008
    Assignee: Tokyo Electron Limited
    Inventors: Katsutoshi Ishii, Hiroyuki Matsuura