Abstract: A single crystal SiC substrate is produced with low cost in which a polycrystalline SiC substrate with relatively low cost is used as a base material substrate where the single crystal SiC substrate has less strain, good crystallinity and large size. The method including a P-type ion introduction step for implanting P-type ions from a side of a surface Si layer 3 into an SOI substrate 1 in which the surface Si layer 3 and an embedded oxide layer 4 having a predetermined thickness are formed on an Si base material layer 2 to convert the embedded oxide layer 4 into a PSG layer 6 to lower a softening point, and an SiC forming step for heating the SOI substrate 1 having the PSG layer 6 formed therein in an atmosphere hydrocarbon-based gas to convert the surface Si layer 3 into SiC, and thereafter, cooling the resulting substrate to form a single crystal SiC layer 5 on a surface thereof.

Abstract: A single crystal SiC substrate is produced with low cost in which a polycrystalline SiC substrate with relatively low cost is used as a base material substrate where the single crystal SiC substrate has less strain, good crystallinity and large size. The method including a P-type ion introduction step of for implanting P-type ions from a side of a surface Si layer 3 into an SOI substrate 1 in which the surface Si layer 3 and an embedded oxide layer 4 having a predetermined thickness are formed on an Si base material layer 2 to convert the embedded oxide layer 4 into a PSG layer 6 to lower a softening point, and an SiC forming step for heating the SOI substrate 1 having the PSG layer 6 formed therein in an atmosphere hydrocarbon-based gas to convert the surface Si layer 3 into SiC, and thereafter, cooling the resulting substrate to form a single crystal SiC layer 5 on a surface thereof.

Abstract: A method including a phosphorous ion introduction step for implanting phosphorous ions from a side of a surface Si layer into an SOI substrate in which the surface Si layer and an embedded oxide layer having a predetermined thickness are formed on an Si base material layer to convert the embedded oxide layer into a PSG layer to lower a softening point. An SiC forming step is performed by heating the SOI substrate having the PSG layer formed therein in an atmosphere of hydrocarbon-based gas to convert the surface Si layer into SiC. Thereafter, the resulting substrate is cooled to form a single crystal SiC layer on a surface thereof.

Abstract: In order to provide a method for manufacturing a single crystal SiC substrate that can obtain an SiC layer with good crystallinity, an Si substrate 1 having a surface Si layer 3 of a predetermined thickness and an embedded insulating layer 4 is prepared, and when the Si substrate 1 is heated in a carbon-series gas atmosphere to convert the surface Si layer 3 into a single crystal SiC layer 6, the Si layer in the vicinity of an interface 8 with the embedded insulating layer 4 is left as a residual Si layer 5.

Abstract: In order to provide a method for manufacturing a single crystal SiC substrate that can obtain an SiC layer with good crystallinity, an Si substrate 1 having a surface Si layer 3 of a predetermined thickness and an embedded insulating layer 4 is prepared, and when the Si substrate 1 is heated in a carbon-series gas atmosphere to convert the surface Si layer 3 into a single crystal SiC layer 6, surface Si layer 3 into a single crystal SIC layer 6, the Si layer in the vicinity of an interface 8 with the embedded insulating layer 4 is left as a residual Si layer 5.

Abstract: A single crystal SiC substrate is produced with low cost in which a polycrystalline SiC substrate with relatively low cost is used as a base material substrate where the single crystal SiC substrate has less strain, good crystallinity and large size. The method including a P-type ion introduction step for implanting P-type ions from a side of a surface Si layer 3 into an SOI substrate 1 in which the surface Si layer 3 and an embedded oxide layer 4 having a predetermined thickness are foamed on an Si base material layer 2 to convert the embedded oxide layer 4 into a PSG layer 6 to lower a softening point, and an SiC forming step for heating the SOI substrate 1 having the PSG layer 6 formed therein in an atmosphere of hydrocarbon-based gas to convert the surface Si layer 3 into SiC, and thereafter, cooling the resulting substrate to foam a single crystal SiC layer 5 on a surface thereof.

Abstract: There is provided a monocrystalline gallium nitride localized substrate suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate. An area in which monocrystalline gallium nitride 410 is grown is locally present on a silicon substrate 100 by forming silicon carbide 200 on the silicon substrate 100 to locally form the monocrystalline gallium nitride 410 on the above-mentioned silicon carbide 200. Silicon nitride 220 is used as a mask in forming the above-mentioned monocrystalline gallium nitride 410.

Abstract: A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130 of a predetermined thickness and a buried insulator 120, in a heating furnace 200 and of increasing the temperature of the atmosphere within heating furnace 200 while supplying a mixed gas (G1+G2) of a hydrogen gas G1 and of a hydrocarbon gas G2 into heating furnace 200, thereby, of metamorphosing surface silicon layer 130 of SOI substrate 100 into a single crystal silicon carbide thin film 140.

Abstract: A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130 of a predetermined thickness and a buried insulator 120, in a heating furnace 200 and of increasing the temperature of the atmosphere within heating furnace 200 while supplying a mixed gas (G1+G2) of a hydrogen gas G1 and of a hydrocarbon gas G2 into heating furnace 200, thereby, of metamorphosing surface silicon layer 130 of SOI substrate 100 into a single crystal silicon carbide thin film 140.

Abstract: Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.

Abstract: Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.

Abstract: There is provided a monocrystalline gallium nitride localized substrate suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate. An area in which monocrystalline gallium nitride 410 is grown is locally present on a silicon substrate 100 by forming silicon carbide 200 on the silicon substrate 100 to locally form the monocrystalline gallium nitride 410 on the above-mentioned silicon carbide 200. Silicon nitride 220 is used as a mask in forming the above-mentioned monocrystalline gallium nitride 410.

Abstract: Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.

Abstract: Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.

Abstract: A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130 of a predetermined thickness and a buried insulator 120, in a heating furnace 200 and of increasing the temperature of the atmosphere within heating furnace 200 while supplying a mixed gas (G1+G2) of a hydrogen gas G1 and of a hydrocarbon gas G2 into heating furnace 200, thereby, of metamorphosing surface silicon layer 130 of SOI substrate 100 into a single crystal silicon carbide thin film 140.

Abstract: To economically and easily fabricate a single crystal silicon carbide thin film. The apparatus for fabricating a single crystal silicon carbide thin film comprises a film-formation chamber 200 adapted to receive a SOI substrate 100 for film-formation, a gas supply means 300 for supplying various gases G1 to G4 necessary to fabricate a single crystal silicon carbide thin film to the film-formation chamber 200, a gas treatment means 500 for treating argon gas as an inert gas G1, propane gas as a hydrocarbon-based gas G2, hydrogen gas as a carrier gas, and oxygen gas G4 supplied to the film-formation chamber 200, and a temperature control means 400 for controlling the temperature of the film-formation chamber 200.

Abstract: The present invention relates to etching for removing a carbon thin film formed on a surface of a sample, to prevent a damage on a sample and eliminate the necessity of providing a special device (such as vacuum pump) as is required in plasma etching. A sealed reaction chamber 100A in which a sample 500 formed with a carbon thin film 510 on its surface is to be set, a gas feed means 200A for feeding argon gas which is an inert gas Ar into which a predetermined proportion of oxygen gas O2 has been mixed from one end to the interior of the reaction chamber 100A, an exhaust means 300A for discharging carbon dioxide gas CO2 from the downstream side of the inert gas Ar fed from the gas feed means 200A, and a heating means 400A for heating the sample 500 to 550° C. or higher are provided.

Abstract: There is provided a monocrystalline gallium nitride localized substrate suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate.

Abstract: A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130, of a predetermined thickness and a buried insulator 120, in a heating furnace 200 and of increasing the temperature of the atmosphere within heating furnace 200 while supplying a mixed gas (G1+G2) of a hydrogen gas G1 and of a hydrocarbon gas G2 into heating furnace 200, thereby, of metamorphosing surface silicon layer 130 of SOI substrate 100 into a single crystal silicon carbide thin film 140.

Abstract: To economically and easily fabricate a single crystal silicon carbide thin film. The apparatus for fabricating a single crystal silicon carbide thin film comprises a film-formation chamber 200 adapted to receive a SOI substrate 100 for film-formation, a gas supply means 300 for supplying various gases G1 to G4 necessary to fabricate a single crystal silicon carbide thin film to the film-formation chamber 200, a gas treatment means 500 for treating argon gas as an inert gas G1, propane gas as a hydrocarbon-based gas G2, hydrogen gas as a carrier gas, and oxygen gas G4 supplied to the film-formation chamber 200, and a temperature control means 400 for controlling the temperature of the film-formation chamber 200.