Abstract: A toner for developing electrostatic images which is obtained by melt mixing at least a binder resin and a coloring agent, forming a powder material by pulverizing the obtained mixture after cooling and removing rough particles and fine particles from the formed powder material by classification, wherein inorganic fine particles having a roundness of 1.00 to 1.30, an average of the diameter of primary particles of 0.05 to 0.45 ?m and a ratio of a standard deviation to the average of the diameter of primary particles of 0.25 or smaller are added as an external additive, and a process for producing a toner for developing electrostatic images which comprises melt mixing at least a binder resin and a coloring agent, forming a powder material by pulverizing the obtained mixture after cooling, rounding the powder material by a heat treatment and adding the above inorganic fine particles to the rounded powder material.

Abstract: A toner for developing electrostatic images which is obtained by melt mixing at least a binder resin and a coloring agent, forming a powder material by pulverizing the obtained mixture after cooling and removing rough particles and fine particles from the formed powder material by classification, wherein inorganic fine particles having a roundness of 1.00 to 1.30, an average of the diameter of primary particles of 0.05 to 0.45 ?m and a ratio of a standard deviation to the average of the diameter of primary particles of 0.25 or smaller are added as an external additive, and a process for producing a toner for developing electrostatic images which comprises melt mixing at least a binder resin and a coloring agent, forming a powder material by pulverizing the obtained mixture after cooling, rounding the powder material by a heat treatment and adding the above inorganic fine particles to the rounded powder material.

Abstract: An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The polycrystalline semiconductor layer is so provided that impurity concentrations are easy to control in LDD regions . The image display device further uses transistors having a gate electrode on an upper surface of the semiconductor layer with an insulating film therebetween, a drain region formed on one side of the gate electrode, and a source region formed on another side of the gate electrode. An activated P-type impurity is added to the area underlying the gate electrode, and an activated N-type impurity is added to the area excluding the area underlying the gate electrode.

Abstract: An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The polycrystalline semiconductor layer is so provided that impurity concentrations are easy to control in LDD regions . The image display device further uses transistors having a gate electrode on an upper surface of the semiconductor layer with an insulating film therebetween, a drain region formed on one side of the gate electrode, and a source region formed on another side of the gate electrode. An activated P-type impurity is added to the area underlying the gate electrode, and an activated N-type impurity is added to the area excluding the area underlying the gate electrode.

Abstract: A liquid crystal display apparatus has horizontal and vertical scanning circuits for scanning an array of pixels. An image signal applied to an image signal supply circuit in the form of series of pixel signals is transferred to pixels in the array of pixels designated by the horizontal and vertical scanning circuits. Each of the horizontal and vertical scanning circuits have a series connection of bidirectional shift register stages and are capable of bidirectional scanning. Each of the bidirectional shift register stages includes a pair of latches connected in tandem and is capable of providing an intermediate output and a shift register stage output.

Abstract: A method for forming a liquid crystal display device includes forming a metal film over a drive substrate, and patterning the metal film to form at least one pixel electrode and an optical shield film. The optical shield film is provided outside of a pixel electrode area and has a width greater than a width of each of the pixel electrode. A resin is deposited over the patterned metal film, and the resin is patterned to form at least one pole spacer and strip spacer. The strip spacer surrounds the pixel electrode area and has a width greater than a diameter of each of pole spacer. Liquid crystal material is supplied into an inside space which is surrounded by the strip spacer, and a sealing material is filled at outer edges of the strip spacer for fixing the drive substrate and a common substrate.

Abstract: A method for forming a liquid crystal display device includes forming a metal film over a drive substrate, and patterning the metal film to form at least one pixel electrode and an optical shield film. The optical shield film is provided outside of a pixel electrode area and has a width greater than a width of each of the pixel electrode. A resin is deposited over the patterned metal film, and the resin is patterned to form at least one pole spacer and strip spacer. The strip spacer surrounds the pixel electrode area and has a width greater than a diameter of each of pole spacer. Liquid crystal material is supplied into an inside space which is surrounded by the strip spacer, and a sealing material is filled at outer edges of the strip spacer for fixing the drive substrate and a common substrate.

Abstract: Eliminating differences in cell gap of a liquid crystal panel is effected to prevent display irregularities while avoiding contamination of the liquid crystal material due to unwanted contact of a seal material with the liquid crystal material. To this end, the liquid crystal panel includes a first substrate DSUB having multiple pixel electrodes AL-P in the form of a matrix, a second substrate USUB opposing the first substrate with a specified gap therebetween and having one or more transparent electrodes ITO-C, a liquid crystal layer LC made of a liquid crystal material sealed in the gap between the opposing substrates, and an alignment film on at least one of inner surfaces of the first and second substrates in contact with the liquid crystal layer for controlling alignment of the liquid crystal material.

Abstract: A liquid crystal display apparatus has horizontal and vertical scanning circuits for scanning an array of pixels. An image signal applied to an image signal supply circuit in the form of series of pixel signals is transferred to pixels in the array of pixels designated by the horizontal and vertical scanning circuits. Each of the horizontal and vertical scanning circuits have a series connection of bidirectional shift register stages and are capable of bidirectional scanning. Each of the bidirectional shift register stages includes a pair of latches connected in tandem and is capable of providing an intermediate output and a shift register stage output.

Abstract: A reflection-type liquid crystal display module has a liquid crystal panel including a first substrate of, for example, a rectangular shape, a second substrate opposed to the first substrate and a liquid crystal layer provided in a space between the first substrate and the second substrate to form a display screen, a package for encasing and holding the liquid crystal panel while maintaining the first substrate in an exposed state and a dichroic prism to which the first substrate is attached. At least two sides each of the first substrate have a side edge extruding outwardly over a corresponding side end of the second substrate. The side edges of the first substrate are fixed between the dichroic prism and the package, whereby the second substrate is supported by the first substrate and not by the package.

Abstract: A semiconductor laser device including at least one of a laser active layer formed of a super lattice and an optical guide layer formed of another super lattice is disclosed in which part of at least one of the super lattices is converted into a mixed crystal by the impurity induced disordering based upon one of impurity diffusion and impurity ion implantation, to divide the super lattice into a first region formed of the mixed crystal and a second region having the super lattice structure, the width of the second region in directions perpendicular to the lengthwise direction of a laser cavity varies along the above lengthwise direction, and the width of a laser excitation region is smaller than the mean value of the width of the second region, to generate laser oscillation having a single transverse mode and a multi longitudinal mode. Thus, the semiconductor laser device emits a laser beam which is small in astigmatism and low in optical feedback noise.

Abstract: In a semiconductor laser device wherein a stripe-shaped impurity-diffused region is disposed in at least parts of semiconductor layers of from a surface semiconductor layer of a semiconductor layer assembly constituting the semiconductor laser device to a second semiconductor layer lying in contact with a first semiconductor layer having an active region, the impurity-diffused region having the same conductivity type as that of the second semiconductor layer and extending at least from the surface semiconductor layer to a depth vicinal to the first semiconductor layer, the impurity region serving as a current path; a semiconductor laser device characterized in that a third semiconductor layer in which the diffusion rate of an impurity for use in the formation of the impurity-diffused region is lower than in the second semiconductor layer is disposed between the surface semiconductor layer and the second semiconductor layer.