Patents by Inventor Katsuya Daimon
Katsuya Daimon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12388414Abstract: An acoustic wave device includes first and second electrode fingers on a piezoelectric layer, and third and fourth electrode fingers and a plurality of fourth electrode fingers are provided on the piezoelectric layer. A connection section includes second and third busbars. The second busbar is on the piezoelectric layer and is connected to one end of each of the second electrode fingers. The third busbar is on the piezoelectric layer and is connected to one end of each of the third electrode fingers. A stress relaxation layer is between the connection section and the piezoelectric layer. The stress relaxation layer does not extend to any of a gap between each of the first electrode fingers and the second busbar and a gap between each of the fourth electrode fingers and the third busbar in a plan view from a thickness direction of a support substrate.Type: GrantFiled: May 23, 2022Date of Patent: August 12, 2025Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Koji Yamamoto, Katsuya Daimon
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Publication number: 20250183868Abstract: An acoustic wave device includes a piezoelectric film including a piezoelectric layer made of lithium niobate, a first interdigitated electrode including a first busbar and first electrode fingers, a second interdigitated electrode including a second busbar and second electrode fingers and interdigitated with the first electrode fingers, and a third electrode including third electrode fingers side by side with the first and second electrode fingers, connected to a potential different from potentials of the first and second interdigitated electrodes and a connection electrode connecting adjacent third electrode fingers to each other. The connection electrode connects ends of adjacent third electrode fingers closer to at least the first busbar. The connection electrode is between at least the first busbar and ends of the second electrode fingers. Mass-addition films are provided in at least a portion of at least one of first, second, and third gap regions.Type: ApplicationFiled: January 31, 2025Publication date: June 5, 2025Inventors: Katsuya DAIMON, Sho NAGATOMO
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Publication number: 20250183876Abstract: An acoustic wave device includes acoustic elements sharing a support, and a piezoelectric film on the support and including a piezoelectric layer that includes a piezoelectric body. The acoustic elements include a first acoustic element that is an acoustic coupling filter, and a second acoustic element electrically connected to the first acoustic element. In plan view, an acoustic reflection portion is provided in the support overlapping with first electrode fingers, second electrode fingers, and third electrode fingers of the first acoustic element and a functional electrode of the second acoustic element.Type: ApplicationFiled: February 10, 2025Publication date: June 5, 2025Inventors: Sho NAGATOMO, Katsuya DAIMON
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Publication number: 20250183871Abstract: An acoustic wave device includes a piezoelectric layer, first and second comb-shaped electrodes respectively including first and second electrode fingers, and a third electrode including third electrode fingers. The first comb-shaped electrode is connected to an input potential. The second comb-shaped electrode is connected to an output potential. The third electrode is connected to a potential different from the first and second comb-shaped electrodes. Each of the third electrode fingers is arranged alongside the first and second electrode fingers. A third busbar interconnects adjacent third electrode fingers. A third electrode finger is between first and second electrode fingers closest to each other. At least one set of electrode fingers selected from the first, second, and third electrode fingers, includes two or more consecutive electrode fingers in the orthogonal-to-electrode-finger direction.Type: ApplicationFiled: February 10, 2025Publication date: June 5, 2025Inventors: Sho NAGATOMO, Katsuya DAIMON
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Publication number: 20250183875Abstract: An acoustic wave device includes a piezoelectric layer, first and second comb-shaped electrodes, and a third electrode. The first comb-shaped electrode is on the piezoelectric layer, connected to an input potential, and including a first busbar, and first electrode fingers. The second comb-shaped electrode is on the piezoelectric layer, connected to an output potential, and including a second busbar, and second electrode fingers. The third electrode is connected to a potential different from the first and second comb-shaped electrodes, and includes third electrode fingers, and a connection electrode. The connection electrode interconnects adjacent third electrode fingers. The first electrode finger, the third electrode finger, the second electrode finger, and the third electrode finger are arranged in this order. A ratio d/p is greater than or equal to about 0.05.Type: ApplicationFiled: February 10, 2025Publication date: June 5, 2025Inventors: Sho NAGATOMO, Katsuya DAIMON
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Patent number: 12324355Abstract: An acoustic wave device includes a piezoelectric layer and first and second electrodes facing each other in a direction crossing a thickness direction of the piezoelectric layer. The acoustic wave device utilizes a bulk wave of a thickness slip first-order mode. The acoustic wave device includes first and second resonators. Each of the first and second resonators includes the first and second electrodes, and a setting portion including a setup region where the first and second electrodes are provided in the piezoelectric layer. The thickness of each of the first and second resonators excludes the thickness of the first and second electrodes included in the resonator. The thickness of the first resonator is different from the thickness of the second resonator.Type: GrantFiled: March 26, 2022Date of Patent: June 3, 2025Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Takashi Yamane, Sho Nagatomo, Tetsuya Kimura, Katsuya Daimon, Takuya Koyanagi
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Publication number: 20250158591Abstract: An acoustic wave device includes a piezoelectric layer, first and second comb-shaped electrodes each respectively including first and second busbars and first and second electrode fingers connected to the first and second busbars, and connected to input and output potentials, and a reference potential electrode connected to a reference potential and including third electrode fingers on the piezoelectric layer and aligned with the first and second electrode fingers, and a connection electrode connecting adjacent third electrode fingers. An order in which a first electrode finger, a second electrode finger, and a third electrode finger are arranged is such that, starting from the first electrode finger, the first electrode finger, the third electrode finger, the second electrode finger, and the third electrode finger define one period. A total number of the first, second, and third electrode fingers is equal to or greater than sixteen.Type: ApplicationFiled: January 14, 2025Publication date: May 15, 2025Inventors: Katsuya DAIMON, Sho NAGATOMO
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Patent number: 12294353Abstract: An acoustic wave element includes a piezoelectric substrate, an IDT electrode on the piezoelectric substrate, and a reflector. The IDT electrode includes plural electrode fingers, and the reflector includes plural reflector electrode fingers. In a case where IRGAP is an IDT-reflector gap that is a distance between a center of the electrode finger located closest to the reflector and a center of the reflector electrode finger located closest to the IDT electrode, and ?REF is a reflector wave length that is twice a repetition pitch of the reflector electrode fingers, a ratio of about 0.25?IRGAP/?REF?about 0.44 is satisfied, and the reflector wave length is longer than an IDT wave length that is a repetition pitch of the electrode fingers.Type: GrantFiled: April 13, 2022Date of Patent: May 6, 2025Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Yohei Konaka, Katsuya Daimon
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Publication number: 20250119114Abstract: An acoustic wave device includes a piezoelectric layer, a first comb-shaped electrode on the piezoelectric layer, including a first busbar and first electrode fingers, and connected to an input potential, a second comb-shaped electrode on the piezoelectric layer, including a second busbar and second electrode fingers interdigitated with the first electrode fingers, and connected to an output potential, and a reference potential electrode connected to a reference potential and including third electrode fingers on the piezoelectric layer aligned with the first and second electrode fingers, and a connection electrode connecting adjacent third electrode fingers. An order in which a first electrode finger, a second electrode finger, and a third electrode finger are arranged is such that, starting from the first electrode finger, the first electrode finger, the third electrode finger, the second electrode finger, and the third electrode finger define one period.Type: ApplicationFiled: December 16, 2024Publication date: April 10, 2025Inventors: Katsuya DAIMON, Sho NAGATOMO
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Publication number: 20250112622Abstract: An acoustic wave device includes a piezoelectric layer, first and second comb-shaped electrodes respectively including first and second electrode fingers, and a reference potential electrode including third electrode fingers. An order in which the first, second, and third electrode fingers are arranged is the first electrode finger, the third electrode finger, the second electrode finger, and the third electrode finger and defines one period. A pair of reflectors sandwich a region where the first electrode finger, the second electrode finger, and the third electrode finger are provided in an electrode finger orthogonal direction.Type: ApplicationFiled: December 12, 2024Publication date: April 3, 2025Inventors: Katsuya DAIMON, Sho NAGATOMO
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Patent number: 12244296Abstract: An acoustic wave filter includes acoustic wave resonators including a piezoelectric substrate and an IDT electrode including first and second electrode fingers. An intersecting region of the first and second electrode fingers includes a central region and first and second edge regions on outer side portions of the central region. An acoustic velocity in the first and second edge regions is lower than that in the central region, and the acoustic wave resonators include a first acoustic wave resonator with a width in the first and second edge regions larger than a width in the central region, and a second acoustic wave resonator including at least one of an acoustic velocity reducing film and an acoustic velocity increasing film in the central region, such that an acoustic velocity in the first and second edge regions is lower than acoustic velocity in the center region.Type: GrantFiled: March 23, 2022Date of Patent: March 4, 2025Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Yasumasa Taniguchi, Katsuya Daimon
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Patent number: 12224733Abstract: An acoustic wave device includes a silicon support substrate, a silicon nitride film on the support substrate, a silicon oxide film on the silicon nitride film, a piezoelectric layer on the silicon oxide film and using Y-cut X-SAW propagation lithium tantalate, and an IDT electrode on the piezoelectric layer. A film thickness of the piezoelectric layer is equal to or less than about 1?, Euler angles of the piezoelectric layer are (0±5°, ?, 0±5°) or (0±5°, ?, 180±5°), ? in the Euler angles of the piezoelectric layer is about 95.5°??<117.5° or about ?84.5°??<?62.5°, and a relationship between ? in the Euler angles of the piezoelectric layer and a film thickness of the silicon nitride film is a combination shown in Table 1 or Table 2.Type: GrantFiled: October 4, 2021Date of Patent: February 11, 2025Assignee: MURATA MANUFACTURING CO., LTD.Inventor: Katsuya Daimon
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Publication number: 20250023546Abstract: An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, an IDT electrode on the piezoelectric layer and including a pair of busbars and electrode fingers, and mass addition films on the electrode fingers. An acoustic reflection portion overlaps at least a portion of the IDT electrode. d/p is about 0.5 or smaller. A region in which adjacent electrode fingers overlap each other is a cross region including a central region, and first and second edge regions. At least a portion of the mass addition films overlap the central region. A width of at least one of the mass addition films is different from a width of other mass addition films.Type: ApplicationFiled: September 13, 2024Publication date: January 16, 2025Inventors: Katsuya DAIMON, Akihiro IYAMA
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Publication number: 20250015781Abstract: An acoustic wave device includes a support, a piezoelectric layer on the support, an IDT electrode on the piezoelectric layer and including busbars and electrode fingers, and mass-added films on the electrode fingers. An acoustic reflection portion is provided in the support and overlaps at least a portion of the IDT electrode. d/p is about 0.5 or less. When viewed in an electrode finger orthogonal direction, a region in which the electrode fingers adjacent to each other overlap each other is an intersecting region including a central region, and first and second edge regions. At least a portion of the mass-added films overlaps the central region in plan view.Type: ApplicationFiled: September 20, 2024Publication date: January 9, 2025Inventors: Katsuya DAIMON, Akihiro IYAMA, Toru YAMAJI
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Patent number: 12191839Abstract: An acoustic wave device includes a support substrate, a piezoelectric layer, and an IDT electrode. The piezoelectric layer is over the support substrate. The IDT electrode is on the piezoelectric layer, and includes a plurality of electrode fingers. An intersecting width of the plurality of electrode fingers is equal to or smaller than about 5?.Type: GrantFiled: July 28, 2022Date of Patent: January 7, 2025Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Hideki Iwamoto, Katsuya Daimon, Tetsuya Kimura
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Patent number: 12149226Abstract: An acoustic wave device includes a piezoelectric substrate, a first interdigital transducer (IDT) electrode, reflectors on both sides of the first IDT electrode in a propagation direction of an acoustic wave, and a second IDT electrode facing the first IDT electrode with a reflector interposed therebetween. The first and second IDT electrodes include first and second intersecting areas in which electrode fingers overlap in the propagation direction. The first and second intersecting areas overlap in the propagation direction. A third busbar of the second IDT electrode is coupled to a first busbar of the first IDT electrode. A fourth busbar of the second IDT electrode is coupled to a ground potential. A resonant frequency of the second IDT electrode is in a frequency band of an interference wave signal.Type: GrantFiled: March 23, 2022Date of Patent: November 19, 2024Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Yasumasa Taniguchi, Katsuya Daimon, Tsutomu Takai
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Publication number: 20240364294Abstract: An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, and an IDT electrode on the piezoelectric layer and including busbars and electrode fingers. In plan view when viewed in a lamination direction of the support and the piezoelectric layer, an acoustic reflector overlaps at least a portion of the IDT electrode on the support. When a thickness of the piezoelectric layer is defined as d and a center-to-center distance between the electrode fingers adjacent to each other is defined as p, d/p is about 0.5 or smaller. Mass addition films are located over at least one of pair of edge regions and a gap region adjacent to the edge region and aligned in an electrode finger facing direction. The mass addition films are not located on at least a portion between the adjacent electrode fingers.Type: ApplicationFiled: July 12, 2024Publication date: October 31, 2024Inventor: Katsuya DAIMON
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Publication number: 20240364300Abstract: An acoustic wave device includes a piezoelectric substrate including a support that includes a support substrate, and a piezoelectric layer located on the support, a functional electrode located on the piezoelectric layer and including at least one pair of electrode fingers, and a dielectric film located on the piezoelectric layer to cover the at least one pair of electrode fingers. An acoustic reflection portion is located at a position overlapping at least a portion of the functional electrode in plan view. Assuming a thickness of the piezoelectric layer is d and a center-to-center distance between the electrode fingers adjacent to each other is p, d/p is about 0.5 or less. Angles of corners ?1, ?2, ?3, and ?4 are such that at least one of ?1??3 or ?2??4 is satisfied.Type: ApplicationFiled: July 11, 2024Publication date: October 31, 2024Inventors: Katsuya DAIMON, Akihiro IYAMA
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Publication number: 20240364296Abstract: An acoustic wave device includes a piezoelectric substrate including a support that includes a support substrate, and a piezoelectric layer on the support, a functional electrode on the piezoelectric layer and including a pair of electrode fingers, and a dielectric film covering the pair of electrode fingers. An acoustic reflection portion overlaps at least a portion of the functional electrode in plan view seen along a laminating direction of the support and the piezoelectric layer. Assuming a thickness of the piezoelectric layer is d and a center-to-center distance between adjacent electrode fingers is p, d/p is about 0.5 or less. A dielectric film ridge portion and an electrode finger ridge portion have a curved shape, in which a curvature radius of at least a portion of the dielectric film ridge portion is larger than a curvature radius of at least a portion of the electrode finger ridge portion.Type: ApplicationFiled: July 11, 2024Publication date: October 31, 2024Inventors: Katsuya DAIMON, Akihiro IYAMA
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Publication number: 20240356517Abstract: An acoustic wave device includes a piezoelectric substrate including a support including a support substrate and a piezoelectric layer on the support and made of lithium tantalate or lithium niobate, and an IDT electrode on the piezoelectric layer and including busbars and electrode fingers. d/p is less than or equal to about 0.5. Some electrode fingers are connected to one busbar. Remaining electrode fingers are connected to another busbar. A crossing region includes a central region and edge regions in an electrode-finger-extending direction. A non-support portion of the support overlaps the central region and about 90% or more of a portion of the edge regions located between the electrode fingers. A through-hole is provided in about 50% or more of the piezoelectric layer overlapping gap regions and located between the electrode fingers. The support portion overlaps a portion of the gap regions where the electrode fingers are provided.Type: ApplicationFiled: July 2, 2024Publication date: October 24, 2024Inventor: Katsuya DAIMON