Abstract: An acoustic wave device is provided between a first terminal that is an antenna terminal and a second terminal that is different from the first terminal, and includes a plurality of acoustic wave resonators. The plurality of acoustic wave resonators include a plurality of series arm resonators and a plurality of parallel arm resonators. When the acoustic wave resonator electrically closest to the first terminal among the plurality of acoustic wave resonators is an antenna end resonator, the antenna end resonator is a SAW resonator or a BAW resonator. At least one acoustic wave resonator other than the antenna end resonator among the plurality of acoustic wave resonators is a first acoustic wave resonator.

Abstract: An acoustic wave device includes a high-acoustic-velocity layer, a piezoelectric layer made of lithium tantalate, and an interdigital transducer electrode that are successively laminated. An acoustic velocity of a bulk wave propagating in the high-acoustic-velocity layer is higher than an acoustic velocity of an acoustic wave propagating in the piezoelectric layer, and an acoustic velocity Vsub of a fast transversal bulk wave propagating in the high-acoustic-velocity layer satisfies Vsh0?Vsub?Vsp with respect to an acoustic velocity Vsh0 of an SH0 mode and an acoustic velocity Vsp of a mode becoming a spurious of which acoustic velocity is not lower than the acoustic velocity of the SH0 mode, wherein the acoustic velocity Vsh0 and the acoustic velocity Vsp is obtained from Eq. (1).

Abstract: A first filter of a multiplexer includes a ladder filter structure with a plurality of series resonators and a plurality of parallel resonators. Each resonator is an acoustic wave resonator that includes an InterDigital Transducer (IDT) electrode including a pair of comb-shaped electrodes. A total number of reflection electrode fingers of the reflectors of at least one of the series resonator that is closest to the common terminal among the series resonators and the parallel resonator that is closest to the common terminal is smaller than a total number of reflection electrode fingers of the reflectors of each of a remainder of the resonators.

Abstract: A first filter of a multiplexer has a ladder filter structure including a plurality of series resonators and a plurality of parallel resonators. Each resonator is an acoustic wave resonator that includes an IDT electrode including a pair of comb-shaped electrodes. A portion having a unit area, in a plan view of a substrate on which the resonators are provided, has a larger weight in at least one of the IDT electrode of the series resonator that is closest to the common terminal, among the series resonator, and the IDT electrode of the parallel resonator that is closest to the common terminal than in the IDT electrode of each of the remainder of the plurality of acoustic wave resonators.

Abstract: A first filter of a multiplexer has a ladder filter structure defined by acoustic wave resonators. An imaginary line obtained by connecting second ends of electrode fingers included in one comb-shaped electrode among a pair of comb-shaped electrodes of each resonator intersects a reference line that is a straight line extending in an acoustic wave propagation direction. When an angle defined by the reference line and the imaginary line of a first series resonator is represented by a first slant angle, an angle defined by the reference line and the imaginary line of a parallel resonator is represented by a second slant angle, and an angle defined by the reference line and the imaginary line of acoustic wave resonators is represented by a third slant angle, at least one of the first slant angle and the second slant angle is smaller than the third slant angle.

Abstract: A first filter of a multiplexer includes a ladder filter structure of acoustic wave resonators. An imaginary line obtained by connecting second ends of electrode fingers included in one comb-shaped electrode among a pair of comb-shaped electrodes of each resonator intersects a reference line that is a straight line extending in an acoustic wave propagation direction. When an angle defined by the reference line and the imaginary line of a first series resonator is represented by a first slant angle, an angle defined by the reference line and the imaginary line of a parallel resonator is represented by a second slant angle, and an angle defined by the reference line and the imaginary line of acoustic wave resonators is represented by a third slant angle, at least one of the first slant angle and the second slant angle is larger than the third slant angle.

Abstract: An acoustic wave filter device includes a piezoelectric layer, a high-acoustic-velocity member, a low-acoustic-velocity film between the high-acoustic-velocity member and the piezoelectric layer, and first and second IDT electrodes on the piezoelectric layer to define acoustic wave resonators. An acoustic wave resonator of a series-arm resonator portion closest to an antenna end and/or an acoustic wave resonator of a parallel-arm resonator portion closest to the antenna end includes the first IDT electrode including first and second electrode fingers, and the remaining acoustic wave resonators include the second IDT electrode including third and fourth electrode fingers. In the first IDT electrode, a central area, first and second low-acoustic-velocity areas, and first and second high-acoustic-velocity areas extend along a direction perpendicular or substantially perpendicular to an acoustic wave propagating direction.

Abstract: An acoustic wave device includes a piezoelectric substrate with a reverse-velocity surface having an ellipse shape, an IDT electrode on the piezoelectric substrate, and a dielectric film on the piezoelectric substrate and covering the IDT electrode. The acoustic wave device utilizes a Love wave. The IDT electrode includes an intersecting region in which first electrode fingers and second electrode fingers are interdigitated. The intersecting region includes a central region, a first edge region and a second edge region located at both ends of the central region. When x(%) denotes a wavelength-normalized film thickness of the IDT electrode and y (g/cm3) denotes an electrode density of the IDT electrode, the wavelength-normalized film x is set at a value not less than x that satisfies Equation 1. The film thicknesses of the dielectric films in the first and second edge regions are smaller than the dielectric film in the central region.

Abstract: An acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and a pair of reflectors provided on both sides of the IDT electrode in a first direction on the piezoelectric substrate, the first direction being a propagation direction of an acoustic wave. The pair of reflectors include a plurality of electrode fingers and a plurality of electrode fingers, respectively, which extend in a second direction, the second direction being perpendicular to the first direction. The electrode finger widths of second end portions are greater than the electrode finger widths of first end portions. The electrode finger width at any given position in the electrode fingers is equal to or greater than the electrode finger width at a position closer than the given position to the first end portions.

Abstract: An acoustic wave device includes a piezoelectric substrate and an IDT electrode on the piezoelectric substrate. The IDT electrode includes a first busbar and a second busbar that oppose each other, multiple first electrode fingers, multiple second electrode fingers, multiple first offset electrodes, and multiple second offset electrodes. A virtual line connecting the leading ends of the first electrode fingers is referred to as a first envelope. The first envelope is included relative to the acoustic-wave propagation direction. A virtual line connecting the leading ends of the second electrode fingers is referred to as a second envelope. The second envelope is inclined relative to the acoustic-wave propagation direction. The direction in which the first offset electrodes extend and the direction in which the second offset electrodes extend inclined relative to the direction orthogonal or substantially orthogonal to the acoustic-wave propagation direction.

Abstract: In an acoustic wave device, an interdigital transducer electrode is disposed on a piezoelectric substrate with a reverse velocity surface having an elliptic shape, and a dielectric film is disposed to cover the interdigital transducer electrode. Assuming an electrode density (%) of the interdigital transducer electrode to be y (%) and a wavelength-normalized film thickness 100 h/? (%) of the interdigital transducer electrode to be x (%), the wavelength-normalized film thickness x of the interdigital transducer electrode takes a value not less than x satisfying y=0.3452x2?6.0964x+36.262 depending on the electrode density of the interdigital transducer electrode.

Abstract: An acoustic wave element includes a piezoelectric substrate, an IDT electrode on the piezoelectric substrate, and a reflector. The IDT electrode includes plural electrode fingers, and the reflector includes plural reflector electrode fingers. An IDT-reflector gap that is a distance between a center of the electrode finger located closest to the reflector and a center of the reflector electrode finger located closest to the IDT electrode is not more than about 0.45 times an IDT wave length as a repetition pitch of the electrode fingers, and a reflector wave length that is twice a repetition pitch of the reflector electrode fingers is longer than the IDT wave length.

Abstract: A notch filter includes a substrate having piezoelectricity, the substrate including a high-acoustic-velocity member, a low-acoustic-velocity film provided on the high-acoustic-velocity member, and a piezoelectric thin film provided on the low-acoustic-velocity film; an interdigital transducer electrode provided on the piezoelectric thin film; and reflectors provided on both sides of the interdigital transducer electrode in an acoustic wave propagation direction. An IR gap is within one of two ranges: 0.1??GIR<0.5? or 0.5?<GIR?0.9?, where ? is a wavelength determined by an electrode finger pitch of the interdigital transducer electrode, and the IR gap is a distance between electrode finger centers of an electrode finger of the interdigital transducer electrode closest to the reflector out of the electrode fingers of the interdigital transducer electrode, and an electrode finger of the reflector closest to the interdigital transducer electrode, out of the electrode fingers of the reflector.

Abstract: A surface acoustic wave element includes a substrate including a LiNbO3 piezoelectric single crystal, a first dielectric layer provided on the substrate, and an IDT electrode provided on the first dielectric layer, and propagates a high-frequency signal on the substrate using a Rayleigh wave.

Abstract: An elastic wave device includes an IDT electrode including first electrode fingers and second electrode fingers. In an intersecting portion, in which the first electrode fingers and the second electrode fingers interdigitate with each other, low-acoustic-velocity regions are disposed on both sides of a central region, high-acoustic-velocity regions are disposed outside of the low-acoustic-velocity regions, and the dimension of each of the low-acoustic-velocity regions in the electrode finger direction is not uniform in the elastic-wave propagation direction.

Abstract: An elastic wave device includes a piezoelectric substrate made of LiNbO3, interdigital transducer electrodes on the piezoelectric substrate, and a first dielectric film provided on the piezoelectric substrate and the first dielectric film to cover the IDT electrodes and made of a silicon oxide. The IDT electrodes include a first metal film made of one metal selected from Pt, Cu, Mo, Au, W, and Ta. The Euler angles (?, ?, ?) of the piezoelectric substrate are (0±5°, ?90°????70°, 0°±5°). The metal for the first metal film and the thickness hm/? (%) match any of the combinations as follows: Metal for the first metal film Thickness hm/? (%) of the first metal film Pt 6.5 ? hm/? ? 25 Cu ?13 ? hm/? ? 25 Mo 15.5 ? hm/? ? 25? Au 6.5 ? hm/? ? 25 W 7.

Abstract: A first filter of a multiplexer includes serial resonators and parallel resonators that are acoustic wave resonators. A first of the serial resonators that is closer to a common terminal than the other serial resonators is connected to the common terminal without the parallel resonators interposed therebetween. Each of the elastic wave resonators includes a substrate having piezoelectricity, an IDT electrode provided on the substrate, and a dielectric layer provided on the substrate to cover the IDT electrode. A thickness of the dielectric layer of the first serial resonator is smaller than a thickness of each of the dielectric layers of the remainder of the elastic wave resonators.

Abstract: An acoustic wave device includes a multilayer substrate including a reverse-velocity surface, a piezoelectric film, a low acoustic velocity material layer, a high acoustic velocity material layer, and an IDT electrode disposed on the piezoelectric film. In the IDT electrode, gap lengths of a first gap between a tip of each of first electrode fingers and a second busbar and a second gap between a tip of each of second electrode fingers and a first busbar are about 0.23 ? or shorter, the gap lengths extending in an extension direction of the first and second electrode fingers.

Abstract: An elastic wave device includes a piezoelectric substrate, elastic wave resonators on or in the piezoelectric substrate, and a dielectric film disposed on the piezoelectric substrate and covering the elastic wave resonators. The elastic wave resonators includes respective IDT electrodes on the piezoelectric substrate. When a wavelength specified by an electrode finger pitch of the IDT electrode is denoted as ?, at least two of the elastic wave resonators have the different wavelengths. In two of the elastic wave resonators having different wavelengths, a film thickness of the IDT electrode in the elastic wave resonator having the longer wavelength is not greater than that of the IDT electrode in the elastic wave resonator having the shorter wavelength. Film thicknesses of the IDT electrodes in at least two of the elastic wave resonators are different from each other. The elastic wave device utilizes a Rayleigh wave.

Abstract: An elastic wave device includes first mass adding films provided on a first dielectric film to overlap with first and second electrodes fingers of an IDT electrode when seen from above, extend in a direction in which the first and second electrode fingers extend, and are provided in a center region, and second and third mass adding films that are provided on the first dielectric film and are provided in first and second edge regions, respectively, and a portion of which overlap with at least one of the first and second electrode fingers when seen from above. Dimensions of the second and third mass adding films along an elastic wave propagation direction are larger than a dimension of the first mass adding films along the elastic wave propagation direction.