Abstract: Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior. By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

Abstract: Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior. By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

Abstract: An object is to provide a fluorine-containing copolymer composition that exhibits long-term stability as well as a fluororesin paint or varnish prepared using the composition. Provided are: a composition comprising a fluorine-containing copolymer synthesized through copolymerization of 0.001 to 50 mol % of particular ethylenically unsaturated organosilicon compound polymerization units relative to 5 to 85 mol % of fluoroolefin polymerization units by a solution polymerization method, a solvent, and an amine compound; a fluororesin paint or varnish prepared using the composition; and a method of producing the fluorine-containing copolymer composition.

Abstract: Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior. By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

Abstract: A method of atomic layer etching a silicon oxide film or a silicon nitride film is provided. Atomic layer etching (ALE) is performed by repeating three steps of (1) hydrogenation step of hydrogenating a surface by irradiating a silicon oxide film or a silicon nitride film with a plasma containing H, (2) acid halide adsorption step of causing chemisorption of an acid halide represented by a formula of Rf—COX (Rf is H, F, a substituent consisting of C and F or consisting of C, H, and F, or —COX; each X is independently any halogen atom of F, Cl, Br and I) on the surface by reacting the acid halide with the hydrogenated surface through exposure to the acid halide, and (3) etching step of etching a single atomic layer by inducing chemical reactions on the surface of the acid halide-adsorbed silicon oxide film or silicon nitride film through irradiation with a plasma containing a noble gas (at least any one of He, Ar, Ne, Kr, and Xe).

Abstract: A method of atomic layer etching a silicon oxide film or a silicon nitride film is provided. Atomic layer etching (ALE) is performed by repeating three steps of (1) hydrogenation step of hydrogenating a surface by irradiating a silicon oxide film or a silicon nitride film with a plasma containing H, (2) acid halide adsorption step of causing chemisorption of an acid halide represented by a formula of Rf—COX (Rf is H, F, a substituent consisting of C and F or consisting of C, H, and F, or —COX; each X is independently any halogen atom of F, Cl, Br and I) on the surface by reacting the acid halide with the hydrogenated surface through exposure to the acid halide, and (3) etching step of etching a single atomic layer by inducing chemical reactions on the surface of the acid halide-adsorbed silicon oxide film or silicon nitride film through irradiation with a plasma containing a noble gas (at least any one of He, Ar, Ne, Kr, and Xe).

Abstract: A method for effectively removing fluorine atoms remaining in a semiconductor fabrication chamber after cleaning the chamber with chlorine trifluoride is provided. The method includes exposing the inside of the chamber after semiconductor fabrication to chlorine trifluoride to remove an object to be removed remaining in the chamber and then thermally treating the inside of the chamber with at least one gas selected from the group consisting of nitrogen, argon, helium, and hydrogen. It is preferred that the exposure to chlorine trifluoride is carried out while monitoring the chamber inside temperature and that the chlorine trifluoride feed is ceased when the inside temperature decreases to a predetermined temperature.

Abstract: Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior. By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

Abstract: The present invention provides processes and equipments for safely and easily preparing an F2-containing gas, as well as processes and equipments for surface modification using the F2-containing gas prepared. According to the present invention, a gas containing a fluoro compound that is easier to handle than F2 is supplied and the fluoro compound is excited and decomposed to convert it into F2 gas before surface modification and then used for surface modification. According to the present invention, there is no necessity of providing, storing and transporting a large amount of F2 gas in advance because a necessary amount of F2 gas is obtained immediately before surface modification.

Abstract: Apparatus for safely and easily preparing an F2-containing gas including equipment for handling a gas containing a fluoro compound that is easier to handle than F2, and in which the fluoro compound is excited and decomposed to convert it into F2 gas before surface modification and then used for surface modification. There is no necessity of providing, storing and transporting a large amount of F2 gas in advance because a necessary amount of F2 gas is obtained immediately before surface modification.

Abstract: The present invention provides processes and equipments for safely and easily preparing an F2-containing gas, as well as processes and equipments for surface modification using the F2-containing gas prepared. According to the present invention, a gas containing a fluoro compound that is easier to handle than F2 is supplied and the fluoro compound is excited and decomposed to convert it into F2 gas before surface modification and then used for surface modification. According to the present invention, there is no necessity of providing, storing and transporting a large amount of F2 gas in advance because a necessary amount of F2 gas is obtained immediately before surface modification.

Abstract: The first chamber cleaning gas and the first silicon-containing film-etching gas of the present invention comprise at least one compound selected from the group consisting of FCOF, CF3OCOF and CF3OCF2OCOF, and O2 in the specific amount, and optionally other gases. The second chamber cleaning gas and the second silicon-containing film-etching gas comprise CF3COF, C3F7COF or CF2(COF)2 and O2 in specific amounts, and optionally may comprise other gases. The chamber cleaning gases and silicon-containing film etching gases of the present invention have a low global warming potential and hardly generate substances in the exhaust gases such as CF4, etc, which are harmful to the environment and have been perceived as contributing to global warming. Therefore, the gases are friendly to the global environment, and have easy handling and excellent exhaust gas treating properties. Further, the chamber cleaning gases of the invention have excellent cleaning rate.

Abstract: This invention relates to gas compositions comprising fluorine-containing nitrogen compounds, which compositions are useful for cleaning the interior of reactors, such as those of CVD (chemical vapor deposition) equipment and also for etching films of silicon-containing compounds. Advantageously, the gas compositions are environmentally friendly and have little or no tendency to generate an effluent gas stream containing noxious ingredients, such as CF4, NF3 and the like. There are provided: a gas composition for cleaning the interior of film deposition chambers contaminated with silicic deposition, which comprises F3NO or combinations of F3NO with O2 and/or inert gas(es) or which comprises FNO or a combination of FNO with O2 and/or inert gas(es); and also a similar gas composition for etching films of silicon-containing compounds, e.g. films of semiconductive materials.

Abstract: The first chamber cleaning gas and the first silicon-containing film-etching gas of the present invention comprise at least one compound selected from the group consisting of FCOF, CF3OCOF and CF3OCF2OCOF, and O2 in the specific amount, and optionally other gases. The second chamber cleaning gas and the second silicon-containing film-etching gas comprise CF3COF, C3F7COF or CF2(COF)2 and O2 in specific amounts, and optionally may comprise other gases.