Abstract: A solid-state imaging device includes a first semiconductor substrate, photoelectric conversion portions arrayed on the first semiconductor substrate and configured to convert incident light to charges, a charge storage portion configured to hold charges transferred from a corresponding one of the photoelectric conversion portions via a transfer transistor, and an interconnect layer stacked on the first semiconductor substrate and including a plurality of metal interconnects. The incident light enters the first semiconductor substrate from a back surface side that is an opposite side to the interconnect layer. The solid-state imaging device further includes a light absorbing film between the photoelectric conversion portions and the metal interconnects.

Abstract: A solid-state imaging element includes a plurality of shallow light receivers that are arrayed two-dimensionally in the vicinity of the surface of a semiconductor substrate and a plurality of deep light receivers that are arrayed two-dimensionally below the shallow light receivers. The shallow light receivers include visible light image light receivers that photoelectrically convert visible light and infrared light and output signals, and infrared light receivers that photoelectrically convert the infrared light. The infrared light receivers include a first infrared light receiver that is used to correct the signals output from the visible light image light receivers to provide signals of visible light components in the visible light image light receivers and a second infrared light receiver that is connected to the deep light receivers to form a multilayer light receiver.

Abstract: A solid-state imaging element includes a plurality of shallow light receivers that are arrayed two-dimensionally in the vicinity of the surface of a semiconductor substrate and a plurality of deep light receivers that are arrayed two-dimensionally below the shallow light receivers. The shallow light receivers include visible light image light receivers that photoelectrically convert visible light and infrared light and output signals, and infrared light receivers that photoelectrically convert the infrared light. The infrared light receivers include a first infrared light receiver that is used to correct the signals output from the visible light image light receivers to provide signals of visible light components in the visible light image light receivers and a second infrared light receiver that is connected to the deep light receivers to form a multilayer light receiver.

Abstract: A solid-state imaging device of the present invention is capable of thinning signals for each column. The solid-state imaging device includes: photo diodes, a drain into which charges transferred by first column CCDs are swept-off, and transfer control units each of which is provided to the corresponding first column CCDs, and transfers, to a row CCD and to the drain, the charges transferred by the corresponding first column CCDs. Each of the transfer control units includes: a second column CCD which transfers, in a column direction, the charges transferred by the first column CCDs corresponding to the transfer control unit, and a column CCD terminal gate which is provided between the second column CCD and the row CCD, and forms a potential barrier between the second column CCD and the row CCD.

Abstract: A solid-state imaging device of the present invention is capable of thinning signals for each column. The solid-state imaging device includes: photo diodes, a drain into which charges transferred by first column CCDs are swept-off, and transfer control units each of which is provided to the corresponding first column CCDs, and transfers, to a row CCD and to the drain, the charges transferred by the corresponding first column CCDs. Each of the transfer control units includes: a second column CCD which transfers, in a column direction, the charges transferred by the first column CCDs corresponding to the transfer control unit, and a column CCD terminal gate which is provided between the second column CCD and the row CCD, and forms a potential barrier between the second column CCD and the row CCD.