Abstract: Disclosed is an Fe-based electroplated steel sheet including: a Si-containing cold-rolled steel sheet containing Si in an amount of 0.1 mass % or more and 3.0 mass % or less; and an Fe-based electroplating layer formed on at least one surface of the Si-containing cold-rolled steel sheet with a coating weight per surface of 5.0 g/m2 or more, in which in an intensity profile measured by glow discharge optical emission spectrometry, a peak of emission intensity at wavelengths indicating Si is detected within a range from a surface of the Fe-based electroplating layer to more than 0.2 ?m in a thickness direction and not more than a thickness of the Fe-based electroplating layer, and an average value of C concentration in a region ranging from 10 ?m to 20 ?m in the thickness direction from the surface of the Fe-based electroplating layer is 0.10 mass % or less.

Abstract: Disclosed is a bolometer infrared imaging device including a plural number of readout circuits, each comprising a bias circuit that includes a bias transistor that supplies a constant voltage to a bolometer device, a bias cancellation circuit that includes a canceller transistor that removes offset current component of the bolometer device and an integrating operational amplifier that integrates the difference current between the current flowing in the bias transistor and that flowing in the canceller transistor. The bias circuit includes a source follower circuit that receives a first input voltage and supplies an output voltage to the gate of the bias transistor. The bias cancellation circuit includes a source follower circuit that receives a second input voltage and supplies an output voltage to the gate of the canceller transistor.

Abstract: Disclosed is a bolometer infrared imaging device including a plural number of readout circuits, each comprising a bias circuit that includes a bias transistor that supplies a constant voltage to a bolometer device, a bias cancellation circuit that includes a canceller transistor that removes offset current component of the bolometer device and an integrating operational amplifier that integrates the difference current between the current flowing in the bias transistor and that flowing in the canceller transistor. The bias circuit includes a source follower circuit that receives a first input voltage and supplies an output voltage to the gate of the bias transistor. The bias cancellation circuit includes a source follower circuit that receives a second input voltage and supplies an output voltage to the gate of the canceller transistor.

Abstract: Disclosed is a bolometer infrared imaging device including a plural number of readout circuits, each comprising a bias circuit that includes a bias transistor that supplies a constant voltage to a bolometer device, a bias cancellation circuit that includes a canceller transistor that removes offset current component of the bolometer device and an integrating operational amplifier that integrates the difference current between the current flowing in the bias transistor and that flowing in the canceller transistor. The bias circuit includes a source follower circuit that receives a first input voltage and supplies an output voltage to the gate of the bias transistor. The bias cancellation circuit includes a source follower circuit that receives a second input voltage and supplies an output voltage to the gate of the canceller transistor.

Abstract: Disclosed is a bolometer infrared imaging device including a plural number of readout circuits, each comprising a bias circuit that includes a bias transistor that supplies a constant voltage to a bolometer device, a bias cancellation circuit that includes a canceller transistor that removes offset current component of the bolometer device and an integrating operational amplifier that integrates the difference current between the current flowing in the bias transistor and that flowing in the canceller transistor. The bias circuit includes a source follower circuit that receives a first input voltage and supplies an output voltage to the gate of the bias transistor. The bias cancellation circuit includes a source follower circuit that receives a second input voltage and supplies an output voltage to the gate of the canceller transistor.

Abstract: A hermetically sealed battery is provided, equipped with a opening sealing unit 10 including a Positive Temperature Coefficient (PTC) element without reducing the volume of the outside can, and capable of preventing the generation of a large current in case a short circuit occurs as well as enhancing operational security. The opening sealing unit 10 according to the invention comprises a bottom plate 11 for closing the opening of the outside can 18, a positive electrode cap 12 forming a space for storing a pressure valve, said positive electrode cap being used as a terminal for the positive electrode, a resilient valve 14 having a steel plate 14a on the upper surface, a spring 15 and a PTC element ring 16 disposed on the flange 12a in the positive electrode cap 12. An insulation gasket 17 is mounted onto the periphery of the opening sealing unit 10 to hermetically close the opening of the outside can 18.

Abstract: An infrared detector includes a silicon substrate, an infrared reflecting film, a diaphragm including a bolometer thin film, disposed above the silicon substrate across a gap, and a signal line that electrically connects the bolometer thin film and the infrared reflecting film, such that the bolometer thin film and the infrared reflecting film constantly become equipotential with each other. In place of the signal line, a conductor independently provided from interconnects in the silicon substrate may be employed.

Abstract: An infrared detector includes a silicon substrate, an infrared reflecting film, a diaphragm including a borometer thin film, disposed above the silicon substrate across a gap, and a signal line that electrically connects the barometer thin film and the infrared reflecting film, such that the barometer thin film and the infrared reflecting film constantly become equipotential with each other. In place of the signal line, a conductor independently provided from interconnects in the silicon substrate may be employed.

Abstract: A hermetically sealed battery with an opening-sealing unit 10 according to the present invention comprises a PTC element ring 16 elastically clamped between the flange 12a of a positive electrode cap 12 and a fold portion 11d formed at the peripheral portion 11c of a bottom plate 11, such that when the temperature of the PTC element rises due to overcurrent or overheating, the PTC element ring 16 can easily expand, thereby tripping the large current with its resistance capacity increased to a predetermined level at a predetermined temperature, thereby enhancing operational security of the battery.

Abstract: A hermetically sealed battery is provided, equipped with a opening sealing unit 10 including a Positive Temperature Coefficient (PTC) element without reducing the volume of the outside can, and capable of preventing the generation of a large current in case a short circuit occurs as well as enhancing operational security. The opening sealing unit 10 according to the invention comprises a bottom plate 11 for closing the opening of the outside can 18, a positive electrode cap 12 forming a space for storing a pressure valve, said positive electrode cap being used as a terminal for the positive electrode, a resilient valve 14 having a steel plate 14a on the upper surface, a spring 15 and a PTC element ring 16 disposed on the flange 12a in the positive electrode cap 12. An insulation gasket 17 is mounted onto the periphery of the opening sealing unit 10 to hermetically close the opening of the outside can 18.

Abstract: An oxide thin film for bolometer having a vanadium oxide represented by VOx, where x satisfies 1.5≦x≦2.0, part of vanadium ion in the vanadium oxide being substituted by metal ion M, where the metal ion M is at least one of chromium (Cr), aluminum (Al), iron (Fe), manganese (Mn), niobium (Nb), tantalum (Ta) and titanium (Ti). Also, provided is an infrared detector having a bolometer thin film defined above. The oxide thin film for bolometer offers a low resistivity and a large TCR value. Also, the infrared detector offers a finer temperature resolution capability (NETD) as low as 0.03° C.

Abstract: A thermal type infrared ray detector with a thermal separation structure includes a plurality of picture elements. Each of the plurality of picture elements includes a circuit formed in a substrate for every picture element, and a light receiving section converting infrared rays into change of a resistance or a charge quantity. The circuit generates a voltage signal from the resistance change or the charge quantity change. Beams mechanically support the light receiving section from the substrate to form a gap between the light receiving section and the substrate, and electrically connect the light receiving section to the circuit. Each of the beams includes a wiring line film formed of Ti alloy and connecting the light receiving section to the circuit, and a protective insulating film surrounding the wiring line film. In this case, the Ti alloy may be TiAl6V4.

Abstract: A rechargeable alkaline storage cell comprising a positive electrode including an active material which mainly comprises nickel hydroxide added with zinc or a zinc compound. The cell further comprises a negative electrode and an alkaline electrolyte which mainly includes potassium hydroxide. The electrolyte also includes lithium hydroxide and sodium hydroxide.