Abstract: An elastic wave device includes an IDT electrode on a second main surface of an element substrate that includes a piezoelectric layer, a support layer on the second main surface and surrounding the IDT electrode, a cover member on the support layer, and routing wiring lines extending from the second main surface of the element substrate onto side surfaces of the element substrate.

Abstract: An acoustic wave device includes an element substrate having piezoelectricity, a functional electrode on a first main surface of the element substrate, an extended wiring line electrically connected to the functional electrode and extending from the first main surface to a side surface of the element substrate, an external terminal electrically connected to the extended wiring line and on a second main surface of the element substrate, a first resin portion to seal the acoustic wave device, and a second resin portion at least between the extended wiring line on the side surface and the first resin portion. The second resin portion has a lower Young's modulus than the first resin portion.

Abstract: An acoustic wave device includes a functional electrode provided on a first main surface of an element substrate, extended wiring lines that are electrically connected to the functional electrode and that are adjacent to each other on a second main surface facing away from the first main surface, external terminals that are connected to the extended wiring lines, respectively, and that are provided on the second main surface, a first resin portion that seals the acoustic wave device, and a second resin portion that is provided at a position which is between the element substrate and the first resin portion and which is on the second main surface.

Abstract: In a composite component, a semiconductor device is stacked on an elastic wave device. Side electrodes extend from at least one side surface of a piezoelectric substrate of the elastic wave device to at least a side surface of a semiconductor substrate of the semiconductor device and are connected to an IDT electrode and functional electrodes. The side electrodes extend onto at least one of a second main surface of the piezoelectric substrate and a second main surface of the semiconductor substrate.

Abstract: An elastic wave device includes an IDT electrode on a piezoelectric substrate, in which the IDT electrode includes first electrode fingers and second electrode fingers, where a portion in which the first electrode fingers and the second electrode fingers overlap with each other in an elastic wave propagation direction is defined as an intersection region including in a direction in which the first and second electrode fingers extend, a center region located on a center side and first and second edge regions respectively located on both sides of the center region, in the first and second edge regions, grooves defining recess portions are provided on the piezoelectric substrate, the first and second electrode fingers are provided inside of the grooves as the recess portions and are disposed on the piezoelectric substrate in the grooves.

Abstract: A composite electronic component includes a first acoustic wave filter, a second acoustic wave filter, a spacer layer, and a switch. The second acoustic wave filter faces the first acoustic wave filter in a first direction. The switch switches an ON state and an OFF state of the first acoustic wave filter and an ON state and an OFF state of the second acoustic wave filter. A first functional electrode and a second functional electrode are located in a hollow space and face each other in the first direction. The switch brings at least one of the first acoustic wave filter and the second acoustic wave filter into the OFF state.

Abstract: An acoustic wave device includes an element substrate having piezoelectricity, a functional electrode on a first main surface of the element substrate, an extended wiring line electrically connected to the functional electrode and extending from the first main surface to a side surface of the element substrate, an external terminal electrically connected to the extended wiring line and on a second main surface of the element substrate, a first resin portion to seal the acoustic wave device, and a second resin portion at least between the extended wiring line on the side surface and the first resin portion. The second resin portion has a lower Young's modulus than the first resin portion.

Abstract: An acoustic wave device includes a functional electrode provided on a first main surface of an element substrate, extended wiring lines that are electrically connected to the functional electrode and that are adjacent to each other on a second main surface facing away from the first main surface, external terminals that are connected to the extended wiring lines, respectively, and that are provided on the second main surface, a first resin portion that seals the acoustic wave device, and a second resin portion that is provided at a position which is between the element substrate and the first resin portion and which is on the second main surface.

Abstract: In a composite component, a semiconductor device is stacked on an elastic wave device. Side electrodes extend from at least one side surface of a piezoelectric substrate of the elastic wave device to at least a side surface of a semiconductor substrate of the semiconductor device and are connected to an IDT electrode and functional electrodes. The side electrodes extend onto at least one of a second main surface of the piezoelectric substrate and a second main surface of the semiconductor substrate.

Abstract: A composite electronic component includes a first acoustic wave filter, a second acoustic wave filter, a spacer layer, and a switch. The second acoustic wave filter faces the first acoustic wave filter in a first direction. The switch switches an ON state and an OFF state of the first acoustic wave filter and an ON state and an OFF state of the second acoustic wave filter. A first functional electrode and a second functional electrode are located in a hollow space and face each other in the first direction. The switch brings at least one of the first acoustic wave filter and the second acoustic wave filter into the OFF state.

Abstract: An elastic wave device includes an IDT electrode on a second main surface of an element substrate that includes a piezoelectric layer, a support layer on the second main surface and surrounding the IDT electrode, a cover member on the support layer, and routing wiring lines extending from the second main surface of the element substrate onto side surfaces of the element substrate.

Abstract: An elastic wave device includes an IDT electrode on a piezoelectric substrate, in which the IDT electrode includes first electrode fingers and second electrode fingers, where a portion in which the first electrode fingers and the second electrode fingers overlap with each other in an elastic wave propagation direction is defined as an intersection region including in a direction in which the first and second electrode fingers extend, a center region located on a center side and first and second edge regions respectively located on both sides of the center region, in the first and second edge regions, grooves defining recess portions are provided on the piezoelectric substrate, the first and second electrode fingers are provided inside of the grooves as the recess portions and are disposed on the piezoelectric substrate in the grooves.

Abstract: Flutes defining inside diameter finishing edges are formed in middle portions of relief parts arranged in three linear arrays which are located between a plurality of linear arrays of protruding parts in a chamfered end section, about an axis 0, and the inside diameter finishing edges are formed along one of opposite open-end edges of each flute which is located on an upstream side of the flute as seen in a tap rotating direction A, and are offset by a predetermined angle ? in the tap rotating direction A with respect to the protruding parts in the chamfered end section. Accordingly, all of the plurality of linear arrays of protruding parts in the chamfered end section can be used to form the internal thread by plastic deformation of an inner circumferential surface of a hole to be tapped.

Abstract: Provided are a plasma-MIG welding method and a welding torch that are capable of reducing spatter amount without relying on control of a MIG welding power supply. The plasma-MIG welding method employs a plasma-MIG welding device configured from: a plasma torch section that includes a plasma nozzle and a plasma electrode; and an MIG torch that includes an MIG tip and a welding wire. The plasma torch section and the MIG torch are arranged so as to face in different directions at a predetermined distance from each other. The plasma-MIG welding method is characterized in that a plasma arc is made to locally overlap with a tip end portion of the welding wire, and in a state in which melting of the welding wire is promoted, MIG welding is carried out without short-circuiting between a workpiece and a tip end of the welding wire which is a consumable electrode.

Abstract: A plasma welding torch that can be reduced in size more than in conventional cases. When an inert gas G such as argon gas is supplied to an outer circumferential space around a non-consumable electrode 13, a portion of the inert gas G is used as plasma gas GP that forms a plasma arc PA between the non-consumable electrode 13 and a base material 2 via a plasma orifice 51. A plasma welding torch 1 moves, maintaining this state, in the direction of the arrow shown in FIG. 4. Meanwhile, a portion of the inert gas G supplied to a gas flowing part 21 is not used as the plasma gas GP but is used as shielding gas GS and is ejected onto the base material 2 ahead in the welding direction via a shielding orifice 52. The welding on the base material 2 is performed in a state where the plasma arc PA and the base material 2 are shielded from the air by this shielding gas.

Abstract: Flutes defining inside diameter finishing edges are formed in middle portions of relief parts arranged in three linear arrays which are located between a plurality of linear arrays of protruding parts in a chamfered end section, about an axis O, and the inside diameter finishing edges are formed along one of opposite open-end edges of each flute which is located on an upstream side of the flute as seen in a tap rotating direction A, and are offset by a predetermined angle ? in the tap rotating direction A with respect to the protruding parts in the chamfered end section. Accordingly, all of the plurality of linear arrays of protruding parts in the chamfered end section can be used to form the internal thread by plastic deformation of an inner circumferential surface of a hole to be tapped.

Abstract: Disclosed are a bonded product, and a manufacturing method and manufacturing device therefor. To obtain a bonded product formed of a solidified material of a molten metal which has been poured into a forming mold with a workpiece, all or part of which is already held therein, or formed of a semi-solidified slurry which is contained in the forming mold together with the workpiece, the semi-solidified slurry or the molten metal is relatively made to flow on the end faces of the workpiece while friction sufficient to break the passive state existing at the surface of the molten metal or the semi-solidified slurry is generated between the workpiece and the semi-solidified slurry or the molten metal.

Abstract: A plasma welding torch that can be reduced in size more than in conventional cases. When an inert gas G such as argon gas is supplied to an outer circumferential space around a non-consumable electrode 13, a portion of the inert gas G is used as plasma gas GP that forms a plasma arc PA between the non-consumable electrode 13 and a base material 2 via a plasma orifice 51. A plasma welding torch 1 moves, maintaining this state, in the direction of the arrow shown in FIG. 4. Meanwhile, a portion of the inert gas G supplied to a gas flowing part 21 is not used as the plasma gas GP but is used as shielding gas GS and is ejected onto the base material 2 ahead in the welding direction via a shielding orifice 52. The welding on the base material 2 is performed in a state where the plasma arc PA and the base material 2 are shielded from the air by this shielding gas.

Abstract: The present invention provides the production method of carboxylic acid compound, as shown in Scheme I.

Abstract: An apparatus for centering a log to allow an optimum yield axis and a maximum radius of rotation of the log to be calculated more accurately than conventionally possible. The angle of rotation of a log M is detected by a rotation angle detector that is engaged with a preliminary axis c about which the log M is rotated. A contour of the log for calculating the optimum yield axis of the log and a contour for calculating the maximum radius of rotation of the log are measured separately. The contour for calculating the optimum yield axis is measured in a fixed-point manner by measuring the log at a plurality of certain measurement points with beam reflection scanners. The contour for calculating the maximum radius of rotation is measured in a comprehensive manner using swing-angle detectors engaged with contact-swinging detection members provided individually in the plural measurement sections.