Patents by Inventor Katsuya Miura

Katsuya Miura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10804457
    Abstract: A magnetoresistive element includes a reference layer having a fixed magnetization direction and including a ferromagnetic material containing Fe or Co, a recording layer having a variable magnetization direction and including a ferromagnetic material, and one non-magnetic layer that is formed between the reference layer and the recording layer and that contains oxygen. One of the reference layer and the recording layer contains Fe. The three layers are arranged so that a magnetization direction of the one of the reference layer and the recording layer becomes perpendicular to a layer surface by an interfacial perpendicular magnetic anisotropy at an interface between the one of the reference layer and the recording layer and the one non-magnetic layer resulting from the one of the reference layer and the recording layer having a predetermined thickness. The one of the reference layer and the recording layer has a bcc structure.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: October 13, 2020
    Assignee: TOHOKU UNIVERSITY
    Inventors: Hideo Ohno, Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Katsuya Miura, Hiroyuki Yamamoto
  • Patent number: 10651369
    Abstract: Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: May 12, 2020
    Assignee: TOHOKU UNIVERSITY
    Inventors: Hideo Ohno, Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Hiroyuki Yamamoto, Katsuya Miura
  • Publication number: 20200027920
    Abstract: To provide a magnetic tunnel junction (MTJ) element that is adapted to suppress the degradation of magnetic properties of a magnetic tunnel junction layer due to plasma CVD layer formation and adapted for miniaturization. The MTJ element includes a magnetic tunnel junction layer (101, 102, 103) and a plurality of passivation layers formed on a side wall of the magnetic tunnel junction layer. The plurality of passivation layers are SiN layers formed under different plasma CVD layer forming conditions and include a first passivation layer 109 formed in direct contact with the magnetic tunnel junction layer. A hydrogen ion density or hydrogen ion energy of a layer forming condition for the first passivation layer is lower than a hydrogen ion density or hydrogen ion energy of a layer forming condition for the other of the plural passivation layers. The other passivation layers include a passivation layer, a nitrogen density of which is higher than a nitrogen density of the first passivation layer.
    Type: Application
    Filed: February 27, 2019
    Publication date: January 23, 2020
    Inventors: Katsuya MIURA, Hirotaka HAMAMURA, Yu ZHAO, Masaki YAMADA, Kiyohiko SATO
  • Publication number: 20200006644
    Abstract: Provided is a method of manufacturing a magnetic tunnel junction that simultaneously realizes removal of oxides on side walls of a magnetic layer and formation of a protective film and prevents deterioration of magnetic characteristics. The method includes: a first step 802 of etching a stacked film including a first magnetic layer, a MgO barrier layer, and a second magnetic layer stacked in order by plasma etching using an oxidizing gas to form the magnetic tunnel junction; and a second step 803 of simultaneously introducing an organic acid gas which is an n-valent acid and a precursor gas having a corresponding metal element valence of m, to form a first protective film on side walls of the magnetic tunnel junction. In the second step, the precursor gas is introduced at a molar ratio of n/m or more with respect to 1 mole of the organic acid gas introduced.
    Type: Application
    Filed: January 7, 2019
    Publication date: January 2, 2020
    Inventors: Yu ZHAO, Katsuya MIURA, Hirotaka HAMAMURA, Masaki Yamada, Kiyohiko SATO
  • Patent number: 10488270
    Abstract: A temperature sensor element has such a structure as, when reinforcing lead wires on internal electrodes with a paste, one side surface of each of the lead wires is covered with a reinforcement paste and the other side surface is not covered with the reinforcement paste without covering the entire lead wires welded and connected to the internal electrodes. This allows elimination of cause of cracks generating, thereby securing sufficient joining strength and reinforcement of conductivity of the internal electrodes and the lead wires, and securing connection strength between the lead wires and the internal electrodes.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: November 26, 2019
    Assignee: KOA CORPORATION
    Inventors: Ryusuke Suzuki, Takumi Ashikawa, Katsuya Miura
  • Patent number: 10336609
    Abstract: First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.
    Type: Grant
    Filed: June 1, 2017
    Date of Patent: July 2, 2019
    Assignee: Hitachi, Ltd.
    Inventors: Keiji Watanabe, Shuntaro Machida, Katsuya Miura, Aki Takei, Tetsufumi Kawamura, Nobuyuki Sugii, Daisuke Ryuzaki
  • Publication number: 20190051819
    Abstract: A magnetic tunnel junction device includes a first ferromagnetic layer, a tunnel barrier that is in contact with the first ferromagnetic layer, and a synthetic ferrimagnetic reference layer that is in contact with the tunnel barrier while being in the other side of the first ferromagnetic layer, in which the synthetic ferrimagnetic reference layer includes a second ferromagnetic layer that has a first magnetization direction while being in contact with the tunnel barrier, a magnetic layer that has a second magnetization direction which is anti-parallel to the first magnetization direction, and a first nonmagnetic layer that is interposed between the second ferromagnetic layer and the magnetic layer, and lateral dimensions of the magnetic layer of the synthetic ferrimagnetic reference layer are made larger than lateral dimensions of the first ferromagnetic layer and the second ferromagnetic layer.
    Type: Application
    Filed: February 27, 2018
    Publication date: February 14, 2019
    Inventors: Katsuya MIURA, Masaki YAMADA, Hirotaka HAMAMURA
  • Publication number: 20180335348
    Abstract: A resistance pattern that contains platinum as a main component is formed into a meander shape and on a main surface of a ceramic substrate. A protective film layer that covers the resistance pattern has a two-layer structure including a trap layer as an inner layer and an overcoat layer as an outer layer. The trap layer contains alumina as a main component and 2 to 30 vol % of platinum. The overcoat layer contains alumina as a main component. With such a configuration, even when reactivity of the platinum resistance pattern becomes higher under high temperature use, platinum contained in the trap layer reacts with oxygen or impurities etc. contained in the ceramic substrate. Thus, reaction of the platinum resistance pattern can be suppressed.
    Type: Application
    Filed: May 15, 2018
    Publication date: November 22, 2018
    Inventors: Katsuya MIURA, Masahiro SHIMODAIRA
  • Publication number: 20180106687
    Abstract: A temperature sensor element has such a structure as, when reinforcing lead wires on internal electrodes with a paste, one side surface of each of the lead wires is covered with a reinforcement paste and the other side surface is not covered with the reinforcement paste without covering the entire lead wires welded and connected to the internal electrodes. This allows elimination of cause of cracks generating, thereby securing sufficient joining strength and reinforcement of conductivity of the internal electrodes and the lead wires, and securing connection strength between the lead wires and the internal electrodes.
    Type: Application
    Filed: October 16, 2017
    Publication date: April 19, 2018
    Inventors: Ryusuke SUZUKI, Takumi ASHIKAWA, Katsuya MIURA
  • Publication number: 20170362082
    Abstract: First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.
    Type: Application
    Filed: June 1, 2017
    Publication date: December 21, 2017
    Inventors: Keiji WATANABE, Shuntaro MACHIDA, Katsuya MIURA, Aki TAKEI, Tetsufumi KAWAMURA, Nobuyuki SUGII, Daisuke RYUZAKI
  • Publication number: 20170110654
    Abstract: Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.
    Type: Application
    Filed: December 28, 2016
    Publication date: April 20, 2017
    Applicant: TOHOKU UNIVERSITY
    Inventors: Hideo OHNO, Shoji IKEDA, Fumihiro MATSUKURA, Masaki ENDOH, Shun KANAI, Hiroyuki YAMAMOTO, Katsuya MIURA
  • Patent number: 9602103
    Abstract: As a technique for attaining a reduction in power consumption, there is a technique for reducing power consumption using a spin wave. No specific proposal concerning spin wave generation, spin wave detection, and a latch technique for information has been made. A device applies an electric field to a first electrode of a nonmagnetic material using a thin line-shaped stacked body including a first ferromagnetic layer and a nonmagnetic layer to thereby generate a spin wave in the first ferromagnetic layer, and detects a phase or amplitude of the spin wave propagated in the first ferromagnetic layer using a second electrode of a ferromagnetic material with a magnetoresistance effect.
    Type: Grant
    Filed: May 22, 2013
    Date of Patent: March 21, 2017
    Assignee: Hitachi, Ltd.
    Inventors: Katsuya Miura, Susumu Ogawa, Kenchi Ito, Masaki Yamada
  • Patent number: 9564152
    Abstract: Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers 106 and 107 of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.
    Type: Grant
    Filed: March 25, 2014
    Date of Patent: February 7, 2017
    Assignee: TOHOKU UNIVERSITY
    Inventors: Hideo Ohno, Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Hiroyuki Yamamoto, Katsuya Miura
  • Publication number: 20170025600
    Abstract: A magnetoresistive element includes a reference layer having a fixed magnetization direction and including a ferromagnetic material containing Fe or Co, a recording layer having a variable magnetization direction and including a ferromagnetic material, and one non-magnetic layer that is formed between the reference layer and the recording layer and that contains oxygen. One of the reference layer and the recording layer contains Fe. The three layers are arranged so that a magnetization direction of the one of the reference layer and the recording layer becomes perpendicular to a layer surface by an interfacial perpendicular magnetic anisotropy at an interface between the one of the reference layer and the recording layer and the one non-magnetic layer resulting from the one of the reference layer and the recording layer having a predetermined thickness. The one of the reference layer and the recording layer has a bcc structure.
    Type: Application
    Filed: August 30, 2016
    Publication date: January 26, 2017
    Applicant: TOHOKU UNIVERSITY
    Inventors: Hideo OHNO, Shoji IKEDA, Fumihiro MATSUKURA, Masaki ENDOH, Shun KANAI, Katsuya MIURA, Hiroyuki YAMAMOTO
  • Patent number: 9450177
    Abstract: There is provided a magnetoresistive element whose magnetization direction is stable in a direction perpendicular to the film surface and whose magnetoresistance ratio is controlled, as well as magnetic memory using such a magnetoresistive element. By having the material of a ferromagnetic layer forming the magnetoresistive element comprise a ferromagnetic material containing at least one type of 3d transition metal, or a Heusler alloy, to control the magnetoresistance ratio, and by controlling the thickness of the ferromagnetic layer on an atomic layer level, the magnetization direction is changed from being in-plane with the film surface to being perpendicular to the film surface.
    Type: Grant
    Filed: February 14, 2011
    Date of Patent: September 20, 2016
    Assignee: TOHOKU UNIVERSITY
    Inventors: Hideo Ohno, Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Katsuya Miura, Hiroyuki Yamamoto
  • Publication number: 20160202330
    Abstract: Provided is a magnetic sensor device having a structure in which a plurality of MTJ structures, each using a ferromagnetic layer having an in-plane axis of easy magnetization and a ferromagnetic layer having a perpendicular axis of easy magnetization, are laminated. By a single device, magnetic fields in two or more directions can be sensed, or a plurality of magnetic field ranges including a small magnetic field and a relatively large magnetic field can be sensed.
    Type: Application
    Filed: September 9, 2013
    Publication date: July 14, 2016
    Applicant: Hitachi, Ltd.
    Inventors: Hiroyuki YAMAMOTO, Akihiko KANDORI, Katsuya MIURA
  • Publication number: 20160105176
    Abstract: As a technique for attaining a reduction in power consumption, there is a technique for reducing power consumption using a spin wave. No specific proposal concerning spin wave generation, spin wave detection, and a latch technique for information has been made. A device applies an electric field to a first electrode of a nonmagnetic material using a thin line-shaped stacked body including a first ferromagnetic layer and a nonmagnetic layer to thereby generate a spin wave in the first ferromagnetic layer, and detects a phase or amplitude of the spin wave propagated in the first ferromagnetic layer using a second electrode of a ferromagnetic material with a magnetoresistance effect.
    Type: Application
    Filed: May 22, 2013
    Publication date: April 14, 2016
    Inventors: Katsuya MIURA, Susumu OGAWA, Kenchi ITO, Masaki YAMADA
  • Patent number: 9153306
    Abstract: Provided is a tunnel magnetoresistive effect element such that a high TMR ratio and a low write current can be realized, and the thermal stability factor (E/kBT) of a recording layer and a pinned layer is increased while an increase in resistance of the element as a whole is suppressed, thus enabling a stable operation. On at least one of a recording layer 21 and a pinned layer 22 each comprising CoFeB, electrically conductive oxide layers 31 and 32 are disposed on a side opposite to a tunnel barrier layer 10.
    Type: Grant
    Filed: November 8, 2011
    Date of Patent: October 6, 2015
    Assignee: TOHOKU UNIVERSITY
    Inventors: Hideo Ohno, Shoji Ikeda, Hiroyuki Yamamoto, Yosuke Kurosaki, Katsuya Miura
  • Patent number: 9135973
    Abstract: Provided are a magnetoresistance effect element with a stable magnetization direction perpendicular to film plane and a controlled magnetoresistance ratio, in which writing can be performed by magnetic domain wall motion, and a magnetic memory including the magnetoresistance effect element. The magnetoresistance ratio is controlled by forming a ferromagnetic layer of the magnetoresistance effect element from a ferromagnetic material including at least one type of 3d transition metal or a Heusler alloy. The magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane by controlling the film thickness of the ferromagnetic layer on an atomic layer level.
    Type: Grant
    Filed: May 26, 2011
    Date of Patent: September 15, 2015
    Assignee: TOHOKU UNIVERSITY
    Inventors: Hideo Ohno, Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Katsuya Miura, Hiroyuki Yamamoto
  • Patent number: 9070457
    Abstract: In magnetic tunnel junctions manufactured with use of a ferromagnetic material having perpendicular magnetic anisotropy, a difference in record retention time depending on stored information due to an imbalance in thermal stability between a parallel state and an anti-parallel state of magnetization, which correspond to bit information, is alleviated. A reference layer and a recording layer which constitute a magnetic tunnel junction are made different in area from each other so as to correct the difference in record retention time corresponding to stored information.
    Type: Grant
    Filed: May 24, 2012
    Date of Patent: June 30, 2015
    Assignee: Tohoku University
    Inventors: Hideo Ohno, Shoji Ikeda, Michihiko Yamanouchi, Hideo Sato, Katsuya Miura