Patents by Inventor Katsuya Miura
Katsuya Miura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240150367Abstract: A compound of the following general formula [I]: wherein each symbol has the same meaning as defined herein, or a pharmaceutically acceptable salt thereof, or a solvate thereof, and a pharmaceutical use of the same in treating organ transplant rejection, graft versus host reaction after transplantation, autoimmune disease, allergic disease and chronic myeloproliferative disease.Type: ApplicationFiled: May 5, 2023Publication date: May 9, 2024Applicant: Japan Tobacco Inc.Inventors: Satoru Noji, Makoto Shiozaki, Tomoya Miura, Yoshinori Hara, Hiroshi Yamanaka, Katsuya Maeda, Akimi Hori, Masafumi Inoue, Yasunori Hase
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Publication number: 20240100474Abstract: A mixed gas separation method includes a step of supplying a mixed gas to the separation membrane and causing a gas with high permeability in the mixed gas to permeate through the separation membrane. In the step, when ?P is a difference between a gas pressure on the primary side of the separation membrane, i.e., a feed pressure, and a gas pressure on the secondary side of the separation membrane, i.e., a permeate pressure, and A is a Joule-Thomson coefficient, a difference ?T between a gas temperature on the primary side of the separation membrane, i.e., a feed temperature, and a gas temperature on the secondary side of the separation membrane, i.e., a permeate temperature, is made less than 90% of A·?P by setting the Nu number in the mixed gas to be greater than or equal to 2 and less than or equal to 10.Type: ApplicationFiled: November 30, 2023Publication date: March 28, 2024Applicant: NGK INSULATORS, LTD.Inventors: Ko KOBAYASHI, Katsuya SHIMIZU, Aya MIURA, Kenichi NODA
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Publication number: 20230296418Abstract: An object is to provide a flow sensor element is non-directional and has an excellent sensor sensitivity. A flow sensor element includes a base body having a spherical shape, and a temperature-sensitive film pattern that is disposed over the entirety of a surface of the base body, and changes in an electrical resistance value due to a change in temperature. It is preferable that the temperature-sensitive film pattern be formed by trimming a temperature-sensitive film that has been formed on the surface of the base body. In the flow sensor element, the temperature-sensitive film pattern can be disposed over the entirety of the surface of the base body having a spherical shape. This enables a constant sensor sensitivity to be obtained regardless of a direction of a fluid, and the accuracy of detection of a flow rate can be improved.Type: ApplicationFiled: June 16, 2021Publication date: September 21, 2023Applicant: KOA CORPORATIONInventors: Masahiro SHIMODAIRA, Katsuya MIURA
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Patent number: 11678583Abstract: Provided is a method of manufacturing a magnetic tunnel junction that simultaneously realizes removal of oxides on side walls of a magnetic layer and formation of a protective film and prevents deterioration of magnetic characteristics. The method includes: a first step 802 of etching a stacked film including a first magnetic layer, a MgO barrier layer, and a second magnetic layer stacked in order by plasma etching using an oxidizing gas to form the magnetic tunnel junction; and a second step 803 of simultaneously introducing an organic acid gas which is an n-valent acid and a precursor gas having a corresponding metal element valence of m, to form a first protective film on side walls of the magnetic tunnel junction. In the second step, the precursor gas is introduced at a molar ratio of n/m or more with respect to 1 mole of the organic acid gas introduced.Type: GrantFiled: February 1, 2022Date of Patent: June 13, 2023Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Yu Zhao, Katsuya Miura, Hirotaka Hamamura, Masaki Yamada, Kiyohiko Sato
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Publication number: 20230161246Abstract: Provided is a novel composition for forming a resist underlayer film. This composition for forming a resist underlayer film includes a polymer (X) and a solvent, the polymer (X) containing: a plurality of structural units which are the same as or different from each other and have a methoxymethyl group and a ROCH2- group (R is a monovalent organic group, a hydrogen atom, or a mixture thereof) other than the methoxymethyl group; and a linking group that links the more than one structural unit.Type: ApplicationFiled: February 22, 2021Publication date: May 25, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Hikaru TOKUNAGA, Yutaro KURAMOTO, Makoto NAKAJIMA, Satoshi HAMADA, Katsuya MIURA
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Publication number: 20220158088Abstract: Provided is a method of manufacturing a magnetic tunnel junction that simultaneously realizes removal of oxides on side walls of a magnetic layer and formation of a protective film and prevents deterioration of magnetic characteristics. The method includes: a first step 802 of etching a stacked film including a first magnetic layer, a MgO barrier layer, and a second magnetic layer stacked in order by plasma etching using an oxidizing gas to form the magnetic tunnel junction; and a second step 803 of simultaneously introducing an organic acid gas which is an n-valent acid and a precursor gas having a corresponding metal element valence of m, to form a first protective film on side walls of the magnetic tunnel junction. In the second step, the precursor gas is introduced at a molar ratio of n/m or more with respect to 1 mole of the organic acid gas introduced.Type: ApplicationFiled: February 1, 2022Publication date: May 19, 2022Inventors: Yu Zhao, Katsuya Miura, Hirotaka Hamamura, Masaki Yamada, Kiyohiko Sato
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Patent number: 11276816Abstract: Provided is a method of manufacturing a magnetic tunnel junction that simultaneously realizes removal of oxides on side walls of a magnetic layer and formation of a protective film and prevents deterioration of magnetic characteristics. The method includes: a first step 802 of etching a stacked film including a first magnetic layer, a MgO barrier layer, and a second magnetic layer stacked in order by plasma etching using an oxidizing gas to form the magnetic tunnel junction; and a second step 803 of simultaneously introducing an organic acid gas which is an n-valent acid and a precursor gas having a corresponding metal element valence of m, to form a first protective film on side walls of the magnetic tunnel junction. In the second step, the precursor gas is introduced at a molar ratio of n/m or more with respect to 1 mole of the organic acid gas introduced.Type: GrantFiled: January 7, 2019Date of Patent: March 15, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Yu Zhao, Katsuya Miura, Hirotaka Hamamura, Masaki Yamada, Kiyohiko Sato
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Patent number: 11164906Abstract: To provide a magnetic tunnel junction (MTJ) element that is adapted to suppress the degradation of magnetic properties of a magnetic tunnel junction layer due to plasma CVD layer formation and adapted for miniaturization. The MTJ element includes a magnetic tunnel junction layer (101, 102, 103) and a plurality of passivation layers formed on a side wall of the magnetic tunnel junction layer. The plurality of passivation layers are SiN layers formed under different plasma CVD layer forming conditions and include a first passivation layer 109 formed in direct contact with the magnetic tunnel junction layer. A hydrogen ion density or hydrogen ion energy of a layer forming condition for the first passivation layer is lower than a hydrogen ion density or hydrogen ion energy of a layer forming condition for the other of the plural passivation layers. The other passivation layers include a passivation layer, a nitrogen density of which is higher than a nitrogen density of the first passivation layer.Type: GrantFiled: February 27, 2019Date of Patent: November 2, 2021Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Katsuya Miura, Hirotaka Hamamura, Yu Zhao, Masaki Yamada, Kiyohiko Sato
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Patent number: 11165015Abstract: A magnetic tunnel junction device includes a first ferromagnetic layer, a tunnel barrier that is in contact with the first ferromagnetic layer, and a synthetic ferrimagnetic reference layer that is in contact with the tunnel barrier while being in the other side of the first ferromagnetic layer, in which the synthetic ferrimagnetic reference layer includes a second ferromagnetic layer that has a first magnetization direction while being in contact with the tunnel barrier, a magnetic layer that has a second magnetization direction which is anti-parallel to the first magnetization direction, and a first nonmagnetic layer that is interposed between the second ferromagnetic layer and the magnetic layer, and lateral dimensions of the magnetic layer of the synthetic ferrimagnetic reference layer are made larger than lateral dimensions of the first ferromagnetic layer and the second ferromagnetic layer.Type: GrantFiled: February 27, 2018Date of Patent: November 2, 2021Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Katsuya Miura, Masaki Yamada, Hirotaka Hamamura
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Patent number: 11131586Abstract: A resistance pattern that contains platinum as a main component is formed into a meander shape and on a main surface of a ceramic substrate. A protective film layer that covers the resistance pattern has a two-layer structure including a trap layer as an inner layer and an overcoat layer as an outer layer. The trap layer contains alumina as a main component and 2 to 30 vol % of platinum. The overcoat layer contains alumina as a main component. With such a configuration, even when reactivity of the platinum resistance pattern becomes higher under high temperature use, platinum contained in the trap layer reacts with oxygen or impurities etc. contained in the ceramic substrate. Thus, reaction of the platinum resistance pattern can be suppressed.Type: GrantFiled: May 15, 2018Date of Patent: September 28, 2021Assignee: KOA CorporationInventors: Katsuya Miura, Masahiro Shimodaira
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Patent number: 10804457Abstract: A magnetoresistive element includes a reference layer having a fixed magnetization direction and including a ferromagnetic material containing Fe or Co, a recording layer having a variable magnetization direction and including a ferromagnetic material, and one non-magnetic layer that is formed between the reference layer and the recording layer and that contains oxygen. One of the reference layer and the recording layer contains Fe. The three layers are arranged so that a magnetization direction of the one of the reference layer and the recording layer becomes perpendicular to a layer surface by an interfacial perpendicular magnetic anisotropy at an interface between the one of the reference layer and the recording layer and the one non-magnetic layer resulting from the one of the reference layer and the recording layer having a predetermined thickness. The one of the reference layer and the recording layer has a bcc structure.Type: GrantFiled: August 30, 2016Date of Patent: October 13, 2020Assignee: TOHOKU UNIVERSITYInventors: Hideo Ohno, Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Katsuya Miura, Hiroyuki Yamamoto
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Patent number: 10651369Abstract: Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.Type: GrantFiled: December 28, 2016Date of Patent: May 12, 2020Assignee: TOHOKU UNIVERSITYInventors: Hideo Ohno, Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Hiroyuki Yamamoto, Katsuya Miura
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Publication number: 20200027920Abstract: To provide a magnetic tunnel junction (MTJ) element that is adapted to suppress the degradation of magnetic properties of a magnetic tunnel junction layer due to plasma CVD layer formation and adapted for miniaturization. The MTJ element includes a magnetic tunnel junction layer (101, 102, 103) and a plurality of passivation layers formed on a side wall of the magnetic tunnel junction layer. The plurality of passivation layers are SiN layers formed under different plasma CVD layer forming conditions and include a first passivation layer 109 formed in direct contact with the magnetic tunnel junction layer. A hydrogen ion density or hydrogen ion energy of a layer forming condition for the first passivation layer is lower than a hydrogen ion density or hydrogen ion energy of a layer forming condition for the other of the plural passivation layers. The other passivation layers include a passivation layer, a nitrogen density of which is higher than a nitrogen density of the first passivation layer.Type: ApplicationFiled: February 27, 2019Publication date: January 23, 2020Inventors: Katsuya MIURA, Hirotaka HAMAMURA, Yu ZHAO, Masaki YAMADA, Kiyohiko SATO
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Publication number: 20200006644Abstract: Provided is a method of manufacturing a magnetic tunnel junction that simultaneously realizes removal of oxides on side walls of a magnetic layer and formation of a protective film and prevents deterioration of magnetic characteristics. The method includes: a first step 802 of etching a stacked film including a first magnetic layer, a MgO barrier layer, and a second magnetic layer stacked in order by plasma etching using an oxidizing gas to form the magnetic tunnel junction; and a second step 803 of simultaneously introducing an organic acid gas which is an n-valent acid and a precursor gas having a corresponding metal element valence of m, to form a first protective film on side walls of the magnetic tunnel junction. In the second step, the precursor gas is introduced at a molar ratio of n/m or more with respect to 1 mole of the organic acid gas introduced.Type: ApplicationFiled: January 7, 2019Publication date: January 2, 2020Inventors: Yu ZHAO, Katsuya MIURA, Hirotaka HAMAMURA, Masaki Yamada, Kiyohiko SATO
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Patent number: 10488270Abstract: A temperature sensor element has such a structure as, when reinforcing lead wires on internal electrodes with a paste, one side surface of each of the lead wires is covered with a reinforcement paste and the other side surface is not covered with the reinforcement paste without covering the entire lead wires welded and connected to the internal electrodes. This allows elimination of cause of cracks generating, thereby securing sufficient joining strength and reinforcement of conductivity of the internal electrodes and the lead wires, and securing connection strength between the lead wires and the internal electrodes.Type: GrantFiled: October 16, 2017Date of Patent: November 26, 2019Assignee: KOA CORPORATIONInventors: Ryusuke Suzuki, Takumi Ashikawa, Katsuya Miura
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Patent number: 10336609Abstract: First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.Type: GrantFiled: June 1, 2017Date of Patent: July 2, 2019Assignee: Hitachi, Ltd.Inventors: Keiji Watanabe, Shuntaro Machida, Katsuya Miura, Aki Takei, Tetsufumi Kawamura, Nobuyuki Sugii, Daisuke Ryuzaki
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Publication number: 20190051819Abstract: A magnetic tunnel junction device includes a first ferromagnetic layer, a tunnel barrier that is in contact with the first ferromagnetic layer, and a synthetic ferrimagnetic reference layer that is in contact with the tunnel barrier while being in the other side of the first ferromagnetic layer, in which the synthetic ferrimagnetic reference layer includes a second ferromagnetic layer that has a first magnetization direction while being in contact with the tunnel barrier, a magnetic layer that has a second magnetization direction which is anti-parallel to the first magnetization direction, and a first nonmagnetic layer that is interposed between the second ferromagnetic layer and the magnetic layer, and lateral dimensions of the magnetic layer of the synthetic ferrimagnetic reference layer are made larger than lateral dimensions of the first ferromagnetic layer and the second ferromagnetic layer.Type: ApplicationFiled: February 27, 2018Publication date: February 14, 2019Inventors: Katsuya MIURA, Masaki YAMADA, Hirotaka HAMAMURA
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Publication number: 20180335348Abstract: A resistance pattern that contains platinum as a main component is formed into a meander shape and on a main surface of a ceramic substrate. A protective film layer that covers the resistance pattern has a two-layer structure including a trap layer as an inner layer and an overcoat layer as an outer layer. The trap layer contains alumina as a main component and 2 to 30 vol % of platinum. The overcoat layer contains alumina as a main component. With such a configuration, even when reactivity of the platinum resistance pattern becomes higher under high temperature use, platinum contained in the trap layer reacts with oxygen or impurities etc. contained in the ceramic substrate. Thus, reaction of the platinum resistance pattern can be suppressed.Type: ApplicationFiled: May 15, 2018Publication date: November 22, 2018Inventors: Katsuya MIURA, Masahiro SHIMODAIRA
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Publication number: 20180106687Abstract: A temperature sensor element has such a structure as, when reinforcing lead wires on internal electrodes with a paste, one side surface of each of the lead wires is covered with a reinforcement paste and the other side surface is not covered with the reinforcement paste without covering the entire lead wires welded and connected to the internal electrodes. This allows elimination of cause of cracks generating, thereby securing sufficient joining strength and reinforcement of conductivity of the internal electrodes and the lead wires, and securing connection strength between the lead wires and the internal electrodes.Type: ApplicationFiled: October 16, 2017Publication date: April 19, 2018Inventors: Ryusuke SUZUKI, Takumi ASHIKAWA, Katsuya MIURA
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Publication number: 20170362082Abstract: First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.Type: ApplicationFiled: June 1, 2017Publication date: December 21, 2017Inventors: Keiji WATANABE, Shuntaro MACHIDA, Katsuya MIURA, Aki TAKEI, Tetsufumi KAWAMURA, Nobuyuki SUGII, Daisuke RYUZAKI