Patents by Inventor Katsuya OOKUBO

Katsuya OOKUBO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Epitaxial silicon wafer, and method for manufacturing epitaxial silicon wafer
    Patent number: 11462409
    Abstract: An epitaxial silicon wafer includes: a silicon wafer doped with phosphorus as a dopant and having an electrical resistivity of less than 1.0 m ?·cm; and an epitaxial film formed on the silicon wafer. The silicon wafer includes: a main surface to which a (100) plane is inclined; and a [100] axis that is perpendicular to the (100) plane and inclined at an angle ranging from 0°30? to 0°55? in any direction with respect to an axis perpendicular to the main surface. The epitaxial silicon wafer has at most 1/cm2 of a density of a hillock defect generated thereon.
    Type: Grant
    Filed: August 7, 2017
    Date of Patent: October 4, 2022
    Assignee: SUMCO CORPORATION
    Inventors: Naoya Nonaka, Tadashi Kawashima, Katsuya Ookubo
  • EPITAXIAL SILICON WAFER, AND METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER
    Publication number: 20190181007
    Abstract: An epitaxial silicon wafer includes: a silicon wafer doped with phosphorus as a dopant and having an electrical resistivity of less than 1.0 m ?·cm; and an epitaxial film formed on the silicon wafer. The silicon wafer includes: a main surface to which a (100) plane is inclined; and a [100] axis that is perpendicular to the (100) plane and inclined at an angle ranging from 0°30? to 0°55? in any direction with respect to an axis perpendicular to the main surface. The epitaxial silicon wafer has at most 1/cm2 of a density of a hillock defect generated thereon.
    Type: Application
    Filed: August 7, 2017
    Publication date: June 13, 2019
    Applicant: SUMCO CORPORATION
    Inventors: Naoya NONAKA, Tadashi KAWASHIMA, Katsuya OOKUBO