Patents by Inventor Katsuya Sugiyama
Katsuya Sugiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240101839Abstract: [Object] To provide a laminate having inorganic nanoparticle-containing surface layer that exhibits a low gloss appearance and inorganic nanoparticle-containing radiation-curable ink. [Resolution Means] A laminate of an embodiment of the present disclosure has a substrate and a surface layer containing a cured product of a radiation-curable ink, the radiation-curable ink containing inorganic nanoparticles, a polyether-modified polymer, and at least one selected from the group consisting of a radiation-curable polymerizable oligomer and a radiation-curable polymerizable monomer, and the surface layer having a 60° surface glossiness of 50.0 GU or less.Type: ApplicationFiled: November 17, 2020Publication date: March 28, 2024Inventors: Naota Sugiyama, Katsuya Ono, Richard J. Pokorny, Taiki Ihara, Hiroki Hayashi, Sonja S. Mackey, Hideyuki Hatanaka
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Patent number: 11941549Abstract: The management device of an autonomous driving vehicle includes a congestion rate calculation unit and a waiting place setting unit. The congestion rate calculation unit is able to calculate the congestion rate of a parking lot adjoining each of a plurality of commercial facilities. In a case where the congestion rate of a neighbor parking lot, or a parking lot in the neighborhood of a boarding place contained in reservation information for an autonomous driving vehicle reserved for dispatch, during a waiting time period before the scheduled boarding time, is less than a congestion threshold, the waiting place setting unit sets the neighbor parking lot as a waiting place for the autonomous driving vehicle to wait during the waiting time period.Type: GrantFiled: February 17, 2022Date of Patent: March 26, 2024Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Shin Sakurada, Katsuya Hoshi, Hiroaki Sugiyama, Masahisa Sawada, Hiroyuki Ito, Makoto Segi, Hiroki Hattori
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Publication number: 20240093047Abstract: To provide a laminate having an inorganic nanoparticle-containing wear-resistant layer formed by low viscosity ink and an inorganic nanoparticle-containing radiation-curable ink having low viscosity. A laminate according to an embodiment of the present disclosure contains: a substrate, and a wear-resistant layer containing a cured product of a radiation-curable ink, the radiation-curable ink containing inorganic nanoparticles, a compound represented by Formula (1) below, and at least one selected from the group consisting of a radiation-curable polymerizable oligomer and a radiation-curable polymerizable monomer: R1—R2—Si(OR3)3 Formula (1). In Formula (I), R1 is an acryloyl group or a methacryloyl group, R2 is an alkylene group having from 5 to 12 carbon atoms, and R3 is an alkyl group having from 1 to 4 carbon atoms.Type: ApplicationFiled: November 19, 2020Publication date: March 21, 2024Inventors: Naota Sugiyama, Katsuya Ono, Richard J. Pokorny, Taiki Ihara, Hiroki Hayashi, Sonja S. Mackey, Hideyuki Hatanaka
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Publication number: 20240083482Abstract: Provided is a shopping cart capable of simplifying equipment of a storage area of the shopping cart. A shopping cart allowed to be nested in a front-rear direction, including: a cart body; a battery configured to supply power to an electronic device attached to the cart body and displayed commodity information read by a reading device; a power receiving portion provided on a front side of the cart body and configured to be electrically connectable to an external power supply; and a power transmitting portion provided on a rear surface side of the power receiving portion and configured to supply power to a power receiving portion of another shopping cart nested in the shopping cart. Each of the power receiving portion and the power transmitting portion is provided with a magnet configured for holding a relative position.Type: ApplicationFiled: September 11, 2023Publication date: March 14, 2024Inventors: Katsuaki SAKURADA, Masahiro YASUNO, Katsuya TAKEDA, Hachirou SAWADA, Reiji SUGIKAMI, Tomonori SUGIYAMA, Hiroki TAKEDA, Takahiro OKAZAKI, Ryoichi YAMAMOTO, Tomoyuki KITADA
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Patent number: 11912308Abstract: An autonomous vehicle allows passengers to transfer from a passenger vehicle, which is a relatively large vehicle, to the autonomous vehicle. The autonomous vehicle is provided with an autonomous travel control unit (steering control unit) configured to, when the passenger vehicle is stopped, cause the autonomous vehicle to pull up alongside the passenger vehicle such that an entrance (second entrance) of the autonomous vehicle is placed next to an entrance (first entrance) of the passenger vehicle.Type: GrantFiled: December 21, 2021Date of Patent: February 27, 2024Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Shin Sakurada, Katsuya Hoshi, Hiroaki Sugiyama, Masahisa Sawada, Hiroyuki Ito, Makoto Segi, Hiroki Hattori
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Publication number: 20230394676Abstract: A video analyzing device is configured to acquire information related to a motion of a target object based on a video showing the motion. The video analyzing device includes circuitry. The circuitry is configured to perform a video displaying process of displaying the video on a display screen of a display device; a region specifying process of specifying a part of a range shown in the video as a determination region; and an information acquiring process of acquiring the information based on a change in the specified determination region. The region specifying process includes specifying the part as the determination region based on an operation by a user for selecting a range surrounding the target object from a still image. The still image is part of the video and includes the target object.Type: ApplicationFiled: May 24, 2023Publication date: December 7, 2023Inventors: Yoko KOMORI, Katsuya SUGIYAMA, Masatoshi SHIMADA, Takayuki IWAHANA
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Patent number: 8604430Abstract: The inspection apparatus disclosed generates an electron beam, an acceleration electrode accelerates the electron beam, a convergence lens converges the electron beam, an electron beam deflector scans the beam over a sample, an objective lens converges the electron beam on the sample, a detector located between the sample and the objective lens detects charged particles emitted from the sample, a power supply applies a retarding voltage to the sample for decelerating the electron beam to the sample, an electrode is disposed between the objective lens and the sample, and a voltage is generated between the sample and the electrode by said electrode, the voltage being determined depending on the sample. The apparatus solves problems encountered in conventional inspection systems.Type: GrantFiled: February 6, 2012Date of Patent: December 10, 2013Assignee: Hitachi, Ltd.Inventors: Yuko Iwabuchi, Hideo Todokoro, Hiroyoshi Mori, Mitsugu Sato, Yasutsugu Usami, Mikio Ichihashi, Satoru Fukuhara, Hiroyuki Shinada, Yutaka Kaneko, Katsuya Sugiyama, Atsuko Takafuji, Hiroshi Toyama
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Publication number: 20120132801Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.Type: ApplicationFiled: February 6, 2012Publication date: May 31, 2012Inventors: Yuko IWABUCHI, Hideo Todokoro, Hiroyoshi Mori, Mitsugu Sato, Yasutsugu Usami, Mikio Ichihashi, Satoru Fukuhara, Hiroyuki Shinada, Yutaka Kaneko, Katsuya Sugiyama, Atsuko Takafuji, Hiroshi Toyama
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Patent number: 8134125Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.Type: GrantFiled: September 16, 2008Date of Patent: March 13, 2012Assignee: Hitachi, Ltd.Inventors: Yuko Iwabuchi, Hideo Todokoro, Hiroyoshi Mori, Mitsugu Sato, Yasutsugu Usami, Mikio Ichihashi, Satoru Fukuhara, Hiroyuki Shinada, Yutaka Kaneko, Katsuya Sugiyama, Atsuko Takafuji, Hiroshi Toyama
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Patent number: 7952074Abstract: A circuit pattern inspection method and an apparatus therefore, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.Type: GrantFiled: August 12, 2008Date of Patent: May 31, 2011Assignee: Hitachi, Ltd.Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
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Publication number: 20090057556Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.Type: ApplicationFiled: September 16, 2008Publication date: March 5, 2009Inventors: Yuko Iwabuchi, Hideo Todokoro, Hiroyoshi Mori, Mitsugu Sato, Yasutsugu Usami, Mikio Ichihashi, Satoru Fukuhara, Hiroyuki Shinada, Yutaka Kaneko, Katsuya Sugiyama, Atsuko Takafuji, Hiroshi Toyama
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Publication number: 20080302964Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.Type: ApplicationFiled: August 12, 2008Publication date: December 11, 2008Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
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Patent number: 7439506Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.Type: GrantFiled: May 11, 2007Date of Patent: October 21, 2008Assignee: Hitachi, Ltd.Inventors: Yuko Iwabuchi, Hideo Todokoro, Hiroyoshi Mori, Mitsugu Sato, Yasutsugu Usami, Mikio Ichihashi, Satoru Fukuhara, Hiroyuki Shinada, Yutaka Kaneko, Katsuya Sugiyama, Atsuko Takafuji, Hiroshi Toyama
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Patent number: 7417444Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.Type: GrantFiled: November 9, 2005Date of Patent: August 26, 2008Assignee: Hitachi, Ltd.Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
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Publication number: 20070215803Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.Type: ApplicationFiled: May 11, 2007Publication date: September 20, 2007Inventors: Yuko Iwabuchi, Hideo Todokoro, Hiroyoshi Mori, Mitsugu Sato, Yasutsugu Usami, Mikio Ichihashi, Satoru Fukuhara, Hiroyuki Shinada, Yutaka Kaneko, Katsuya Sugiyama, Atsuko Takafuji, Hiroshi Toyama
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Patent number: 7242015Abstract: An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.Type: GrantFiled: September 26, 2005Date of Patent: July 10, 2007Assignee: Hitachi, Ltd.Inventors: Hiroyuki Shinada, Yusuke Yajima, Hisaya Murakoshi, Masaki Hasegawa, Mari Nozoe, Atsuko Takafuji, Katsuya Sugiyama, Katsuhiro Kuroda, Kaoru Umemura, Yasutsugu Usami
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Patent number: 7232996Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.Type: GrantFiled: December 29, 2005Date of Patent: June 19, 2007Assignee: Hitachi, Ltd.Inventors: Yuko Iwabuchi, Hideo Todokoro, Hiroyoshi Mori, Mitsugu Sato, Yasutsugu Usami, Mikio Ichihashi, Satoru Fukuhara, Hiroyuki Shinada, Yutaka Kaneko, Katsuya Sugiyama, Atsuko Takafuji, Hiroshi Toyama
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Publication number: 20060151699Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.Type: ApplicationFiled: December 29, 2005Publication date: July 13, 2006Inventors: Yuko Iwabuchi, Hideo Todokoro, Hiroyoshi Mori, Mitsugu Sato, Yasutsugu Usami, Mikio Ichihashi, Satoru Fukuhara, Hiroyuki Shinada, Yutaka Kaneko, Katsuya Sugiyama, Atsuko Takafuji, Hiroshi Toyama
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Patent number: 7026830Abstract: To make possible the in-line inspection of a pattern of an insulating material. A patterned wafer 40 formed with a pattern by a resist film is placed on a specimen table 21 of a patterned wafer inspection apparatus 1 in opposed relation to a SEM 3. An electron beam 10 of a large current is emitted from an electron gun 11 and the pattern of the patterned wafer is scanned only once at a high scanning rate. The secondary electrons generated by this scanning from the patterned wafer are detected by a secondary electron detector 16 thereby to acquire an electron beam image. Using this electron beam image, the comparative inspection is conducted on the patterned wafer through an arithmetic operation unit 32 and a defect determining unit 33. Since an electron beam image of high contrast can be obtained by scanning an electron beam only once, a patterned wafer inspection method using a SEM can be implemented in the IC fabrication method.Type: GrantFiled: March 6, 2003Date of Patent: April 11, 2006Assignee: Hitachi, Ltd.Inventors: Hiroyuki Shinada, Mari Nozoe, Haruo Yoda, Kimiaki Ando, Katsuhiro Kuroda, Yutaka Kaneko, Maki Tanaka, Shunji Maeda, Hitoshi Kubota, Aritoshi Sugimoto, Katsuya Sugiyama, Atsuko Takafuji, Yusuke Yajima, Hiroshi Tooyama, Tadao Ino, Takashi Hiroi, Kazushi Yoshimura, Yasutsugu Usami
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Patent number: 7012252Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.Type: GrantFiled: April 19, 2005Date of Patent: March 14, 2006Assignee: Hitachi, Ltd.Inventors: Yuko Iwabuchi, Hideo Todokoro, Hiroyoshi Mori, Mitsugu Sato, Yasutsugu Usami, Mikio Ichihashi, Satoru Fukuhara, Hiroyuki Shinada, Yutaka Kaneko, Katsuya Sugiyama, Atsuko Takafuji, Hiroshi Toyama