Abstract: The present invention is a semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first photosensitive insulating layer formed on the semiconductor device, and a second photosensitive insulating layer formed on the first photosensitive insulating layer, in which the first and second photosensitive insulating layers are composed of a photo-curable resin composition containing a silicone polymer compound having an epoxy group-containing repeating unit shown by formula (1) and a phenolic hydroxyl group-containing repeating unit shown by formula (2), a photosensitive acid generator, a solvent, and crosslinking agents.

Abstract: A chemically amplified negative resist composition comprising a silicone structure-bearing polymer forms a film which can be readily patterned. The patterned film is tightly adherent to various substrates and suited as protective film on electric/electronic parts because of improved alkali resistance and reliability.

Abstract: A polymer compound includes a carboxyl group and a siloxane chain and is obtained in the presence of an acid catalyst by condensation of at least; (I) a siloxane compound having phenol groups at both terminals, as shown by formula (1), (II) phenols shown by formula (2) and/or phenols shown by formula (3), and (III) one or more kinds of aldehydes and ketones shown by the following general formula (4). The polymer compound can be used suitably as a base resin of a chemically amplified negative resist composition with which the problem of delamination generated on metal wires, an electrode, and a substrate, can be improved, and with which a fine pattern can be formed without generating a scum and a footing profile in the pattern bottom and on the substrate, using a widely used aqueous 2.38% TMAH solution as a developer.

Abstract: The present invention provides a silicone skeleton-containing polymer compound containing a repeating unit shown by the general formula (1). There can be provided a silicone skeleton-containing polymer compound suitable used as a base resin of a chemically amplified negative resist composition that can remedy the problem of delamination generated on a metal wiring such as Cu and Al, an electrode, and a substrate, especially on a substrate such as SiN, and can form a fine pattern without generating a scum and a footing profile in the pattern bottom and on the substrate.

Abstract: A silicone structure-bearing polymer comprising recurring units derived from a bis(4-hydroxy-3-allylphenyl) derivative and having a Mw of 3,000-500,000 is provided. A chemically amplified negative resist composition comprising the polymer overcomes the stripping problem that a coating is stripped from metal wirings of Cu or Al, electrodes, and SiN substrates.

Abstract: A silicone structure-bearing polymer having a crosslinking group within the molecule, containing an isocyanurate structure bonded within the molecule, and having a Mw of 3,000-500,000 is provided. The polymer overcomes the stripping problem that a coating is stripped from metal wirings of Cu or Al, electrodes, and SiN substrates.

Abstract: A chemically amplified negative resist composition comprising a silicone structure-bearing polymer forms a film which can be readily patterned. The patterned film is tightly adherent to various substrates and suited as protective film on electric/electronic parts because of improved alkali resistance and reliability.

Abstract: The present invention provides a silicone skeleton-containing polymer compound containing a repeating unit shown by the general formula (1) and having a weight average molecular weight of 3,000 to 500,000. There can be provided a silicone skeleton-containing polymer compound suitable used as a base resin of a chemically amplified negative resist composition that can remedy the problem of delamination generated on a metal wiring such as Cu and Al, an electrode, and a substrate, especially on a substrate such as SiN, and can form a fine pattern without generating a scum and a footing profile in the pattern bottom and on the substrate when the widely used 2.38% TMAH aqueous solution is used as a developer.

Abstract: A silicone structure-bearing polymer comprising recurring units derived from a bis(4-hydroxy-3-allylphenyl) derivative and having a Mw of 3,000-500,000 is provided. A chemically amplified negative resist composition comprising the polymer overcomes the stripping problem that a coating is stripped from metal wirings of Cu or Al, electrodes, and SiN substrates.

Abstract: A positive photosensitive resin composition containing a polymer compound obtained in the presence of an acid catalyst by condensation of at least a siloxane compound shown by formula (1), a phenol compounds shown by formula (2) and/or formula (3), and aldehydes and ketones shown by formula (4), a photosensitive material capable of generating an acid by light and increasing a dissolution rate in an aqueous alkaline solution, a crosslinker, and a solvent. There can be provided a positive photosensitive resin composition that can remedy the problem of delamination generated on metal wiring, electrode, and substrate such as Cu and Al, especially on substrate SiN, and can form fine pattern having forward tapered shape without generating scum and footing profile in the pattern bottom and on the substrate when the widely used 2.38% TMAH aqueous solution is used as a developer.

Abstract: A chemically amplified positive resist composition is provided comprising a substantially alkali-insoluble polymer having an acid labile group-protected acidic functional group, a poly(meth)acrylate polymer having Mw of 1,000-500,000, and an acid generator in a solvent. The composition forms on a substrate a resist film of 5-100 ?m thick which can be briefly developed to form a pattern at a high sensitivity and a high degree of removal or dissolution to bottom.

Abstract: A silicone structure-bearing polymer having a crosslinking group within the molecule, containing an isocyanurate structure bonded within the molecule, and having a Mw of 3,000-500,000 is provided. The polymer overcomes the stripping problem that a coating is stripped from metal wirings of Cu or Al, electrodes, and SiN substrates.

Abstract: A chemically amplified negative resist composition is provided comprising (A) a resin having a crosslinking group, (B) a crosslinker, (C) a photoacid generator capable of generating an acid upon exposure to light of wavelength 190-500 nm, (D) a solvent, and (E) a fluoroalkyl-containing amine compound. The resist composition can form a fine pattern, specifically a fine hole or space pattern which has a positive taper (or forward taper) profile in which the size of top is greater than the size of bottom or improves the overhang profile with extremely projected top.

Abstract: A silicone structure-bearing polymer having a crosslinking group within the molecule, containing an isocyanurate structure bonded within the molecule, and having a Mw of 3,000-500,000 is provided. The polymer overcomes the stripping problem that a coating is stripped from metal wirings of Cu or Al, electrodes, and SiN substrates.

Abstract: A chemically amplified positive resist composition comprising (A) 100 pbw of a base resin which is normally alkali insoluble or substantially insoluble, (B) 0.05-20 pbw of a photoacid generator, (C) 0.1-50 pbw of a thermal crosslinker, and (D) 50-5,000 pbw of an organic solvent is coated to form a thick film having a high sensitivity and resolution.

Abstract: A naphthalene derivative having formula (1) is provided wherein Ar1 and Ar2 denote a benzene or naphthalene ring, and n is such a natural number as to provide a weight average molecular weight of up to 100,000. A material comprising the naphthalene derivative or a polymer comprising the naphthalene derivative is spin coated to form a resist bottom layer having improved properties. A pattern forming process in which a resist bottom layer formed by spin coating is combined with an inorganic hard mask formed by CVD is available.

Abstract: In a chemically amplified positive resist composition comprising (A) a base resin, (B) a photoacid generator, (C) a thermal crosslinker, and (D) an organic solvent, the base resin is a specific polymer and the crosslinker is a siloxane compound. A coating of the composition is readily developable in aqueous alkaline solution. On heat treatment, it forms a cured resist pattern film of satisfactory profile.

Abstract: A chemically amplified positive resist composition is provided comprising an alkali-insoluble or substantially alkali-insoluble polymer having an acid labile group-protected acidic functional group, an alkyl vinyl ether polymer, a photoacid generator, and a benzotriazole compound in a solvent. The composition forms on a substrate a resist film of 5-100 ?m thick which can be briefly developed to form a pattern at a high sensitivity and a high degree of removal or dissolution to bottom.

Abstract: A positive resist composition comprises a polymer comprising repeat units having formula (1) or (2). Herein denotes an aromatic hydrocarbon group, R1 is H, methyl or trifluoromethyl, R2 is H, C1-C12 alkyl or aromatic hydrocarbon group, R3 is C1-C12 alkyl, or R2 and R3 may bond together to form a ring, and a is 1 or 2. When used in the ArF lithography, the resist composition exhibits high resolution. When used in the EB image writing for mask processing, the resist composition exhibits high resolution and sensitivity sufficient to comply with high-accelerating-voltage EB irradiation, and high etch resistance.

Abstract: In a chemically amplified positive resist composition comprising a base resin and an acid generator in a solvent, the base resin contains both an alkali-insoluble or substantially alkali-insoluble polymer having an acid labile group-protected acidic functional group having a Mw of 1,000-500,000 and an alkyl vinyl ether polymer having a Mw of 10,000-500,000. The composition forms on a substrate a resist film of 5-100 ?m thick which can be briefly developed to form a pattern at a high sensitivity and a high degree of removal or dissolution to bottom.