Abstract: An ultrasonograph, an ultrasonic transducer, an inspection device, and an ultrasonic imaging device enabling easy and quick inspection and high-resolution or high-speed processing are provided. Barium titanate (BaTiO3) or lead zirconate titanate (PZT) is used for a piezoelectric material constituting the ultrasonic transducer, and the thickness thereof is 0.1 ?m to 100 ?m. Included therein are a drive section capable of driving an arbitrary one of piezoelectric layers, a detecting section detecting electrical signals generated by the plural piezoelectric layers based on echoes from an inspection object, the echoes being originated from an ultrasonic wave generated by the driven piezoelectric layer, and a processing section performing processing for visualizing a state of the inspection object based on the detected electrical signals.

Abstract: A method of manufacturing a cold cathode type electron emitting device includes forming a pair of electrodes, which are spaced from each other, on a substrate, forming conductive thin films, which are electrically connected with the pair of electrodes and have a cracked portion therebetween, on a space between the pair of electrodes, forming conductive deposits on the cracked portion of the conductive thin films to form an electron emission section, and subjecting the electron emission section to a treatment using plasma to expand a gap between the conductive deposits on the cracked portion.

Abstract: A method of manufacturing a cold cathode type electron emitting device, comprising forming a pair of electrodes, which are spaced from each other, on a substrate, forming conductive thin films, which are electrically connected with the pair of electrodes and have a cracked portion therebetween, on a space between the pair of electrodes, forming conductive deposits on the cracked portion of the conductive thin films to form an electron emission section, and subjecting the electron emission section to a treatment using plasma to expand a gap between the conductive deposits on the cracked portion.

Abstract: An ultrasonograph, an ultrasonic transducer, an inspection device, and an ultrasonic imaging device enabling easy and quick inspection and high-resolution or high-speed processing are provided. Barium titanate (BaTiO3) or lead zirconate titanate (PZT) is used for a piezoelectric material constituting the ultrasonic transducer, and the thickness thereof is 0.1 &mgr;m to 100 &mgr;m. Included therein are a drive section capable of driving an arbitrary one of piezoelectric layers, a detecting section detecting electrical signals generated by the plural piezoelectric layers based on echoes from an irradiation object, the echoes being originated from an ultrasonic wave generated by the driven piezoelectric layer, and a processing section performing processing for visualizing a state of the irradiation object based on the detected electrical signals.

Abstract: In a field emission cold-cathode device, a cathode line or electrode is arranged on a glass substrate. An emitter is arranged on the cathode electrode and is formed of a conductive layer, a low-work-function material layer, and a tip layer stacked one on top of the other in this order. The emitter has a pyramid shape in which the tip layer has a sharp tip. The low-work-function material layer is made of a material having a work function of 4.0 eV or less. The tip layer is made of a material having a negative electron affinity and formed of granular bodies or linear bodies each having a diameter of 100 nm or less.

Abstract: The hybrid type infrared detector includes a plurality of photodiodes constructed by p-n junctions made of compound semiconductor material on a silicon substrate, a signal processing portion formed on another substrate, and a connecting member for electrically connecting the plurality of photodiodes with the signal processing portion, and for injecting carriers generated by the photodiodes into the signal processing portion, and is characterized in that partitioning portions are formed along the cleavage plane of the compound semiconductor material.

Abstract: A semiconductor photoelectric converting device and an imaging device using such semiconductor photoelectric converting devices are provided according to the present invention, the semiconductor photoelectric converting device including an electric charge transfer area provided in a surface portion of a semiconductor substrate and a light-receiving area formed of a piezoelectric material, electrically connected to the electric charge transfer area and provided in contact with the semiconductor substrate, in which electric charges generated by a piezoelectric effect produced by a strain resulting from heat evolved upon the falling of light onto the light-receiving area are conducted to the charge transfer area.

Abstract: A compound semiconductor device suitable for an infrared ray detector comprises a substrate composed of indium antimonide (InSb), a first conductive layer deposited on the substrate and composed of tin-indium antimonide represented by the formula Sn.sub.x (InSb).sub.1-x, where 0.05.ltoreq.x.ltoreq.0.3, a second conductive layer that is a semiconductor region (active region) formed on the first conductive layer, and electrode provided on the second conductive layer, and a surface protective film formed on the first conductive layer except for the electrode portions.

Abstract: This invention provides a method of manufacturing of a superconducting oxide wafer in which a plural system oxide superconducting single crystal thin film is grown by the liquid epitaxy process using the flux on a crystal substrate.

Abstract: A method of manufacturing a semiconductor device involves the step of carrying out the implantation of an impurity in the main plane of a GaAs substrate for the simultaneous formation of a plurality of regions. When the angles formed with the perpendicular implantation of silicon ions in the GaAs main plane and the main orientations of GaAs substrate are expressed by the Euler angles (.lambda.,.mu.,.theta.), then the crystal orientation is so prescribed as to satisfy the following conditions:11.degree.<.lambda.<33.degree.7.degree.<.mu.<24.degree..theta..apprxeq.0.degree.,thereby suppressing the occurrence of channeling in the implantation of ions in the substrate main plane and consequently ensuring substantially uniform impurity concentration in the plural regions.