Patents by Inventor Katsuyoshi Furuki
Katsuyoshi Furuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9991418Abstract: According to one embodiment, a semiconductor light emitting element includes a light emitting layer, a current spreading layer of a first conductivity type, and a pad electrode. The light emitting layer is capable of emitting light. The current spreading layer has a first surface and a second surface. The light emitting layer is disposed on a side of the first surface. A light extraction surface having convex structures of triangle cross-sectional shape and a flat surface which is a crystal growth plane are included in the second surface. The pad electrode is provided on the flat surface. One base angle of the convex structure is 90 degrees or more.Type: GrantFiled: February 1, 2016Date of Patent: June 5, 2018Assignee: Kabushiki Kaisha ToshibaInventors: Hironori Yamasaki, Katsuyoshi Furuki, Yukie Nishikawa
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Publication number: 20160149081Abstract: According to one embodiment, a semiconductor light emitting element includes a light emitting layer, a current spreading layer of a first conductivity type, and a pad electrode. The light emitting layer is capable of emitting light. The current spreading layer has a first surface and a second surface. The light emitting layer is disposed on a side of the first surface. A light extraction surface having convex structures of triangle cross-sectional shape and a flat surface which is a crystal growth plane are included in the second surface. The pad electrode is provided on the flat surface. One base angle of the convex structure is 90 degrees or more.Type: ApplicationFiled: February 1, 2016Publication date: May 26, 2016Inventors: Hironori Yamasaki, Katsuyoshi Furuki, Yukie Nishikawa
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Patent number: 9287448Abstract: According to one embodiment, a semiconductor light emitting element includes a light emitting layer, a current spreading layer of a first conductivity type, and a pad electrode. The light emitting layer is capable of emitting light. The current spreading layer has a first surface and a second surface. The light emitting layer is disposed on a side of the first surface. A light extraction surface having convex structures of triangle cross-sectional shape and a flat surface which is a crystal growth plane are included in the second surface. The pad electrode is provided on the flat surface. One base angle of the convex structure is 90 degrees or more.Type: GrantFiled: March 22, 2011Date of Patent: March 15, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Hironori Yamasaki, Katsuyoshi Furuki, Yukie Nishikawa
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Patent number: 8772809Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a first electrode, a first conductivity type layer, a second conductivity type layer, and a second electrode. The first electrode includes a reflection metal layer. The first conductivity type layer is provided between the light emitting layer and the first electrode. The second conductivity type layer has a first surface on the light emitting layer side and a second surface on an opposite side of the first surface. The second electrode is provided on the second surface of the second conductivity type layer. A plurarity of interfaces, provided between the first conductivity type layer and the reflection metal layer, has at least first concave-convex structures. A region of the second surface of the second conductivity type layer, where the second electrode is not provided, has second concave-convex structures.Type: GrantFiled: August 30, 2012Date of Patent: July 8, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Katsuyoshi Furuki, Hironori Yamasaki, Yukie Nishikawa
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Patent number: 8618551Abstract: According to one embodiment, a semiconductor light emitting device includes a substrate, a first electrode, a first conductivity type layer, a light emitting layer, a second conductivity type layer and a second electrode. The first conductivity type layer includes a first contact layer, a window layer having a lower impurity concentration than the first contact layer and a first cladding layer. The second conductivity type layer includes a second cladding layer, a current spreading layer and a second contact layer. The second electrode includes a narrow-line region on the second contact layer and a pad region electrically connected to the narrow-line region. Band gap energies of the first contact and window layers are larger than that of the light emitting layer. The first contact layer is provided selectively between the window layer and the first electrode and without overlapping the second contact layer as viewed from above.Type: GrantFiled: August 29, 2011Date of Patent: December 31, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Yukie Nishikawa, Hironori Yamasaki, Katsuyoshi Furuki, Takashi Kataoka
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Publication number: 20130221367Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a first electrode, a first conductivity type layer, a second conductivity type layer, and a second electrode. The first electrode includes a reflection metal layer. The first conductivity type layer is provided between the light emitting layer and the first electrode. The second conductivity type layer has a first surface on the light emitting layer side and a second surface on an opposite side of the first surface. The second electrode is provided on the second surface of the second conductivity type layer. A plurarity of interfaces, provided between the first conductivity type layer and the reflection metal layer, has at least first concave-convex structures. A region of the second surface of the second conductivity type layer, where the second electrode is not provided, has second concave-convex structures.Type: ApplicationFiled: August 30, 2012Publication date: August 29, 2013Applicant: Kabushiki Kaisha ToshibaInventors: Katsuyoshi Furuki, Hironori Yamasaki, Yukie Nishikawa
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Publication number: 20120273793Abstract: According to one embodiment, a semiconductor light emitting device includes a substrate, a first electrode, a first conductivity type layer, a light emitting layer, a second conductivity type layer and a second electrode. The first conductivity type layer includes a first contact layer, a window layer having a lower impurity concentration than the first contact layer and a first cladding layer. The second conductivity type layer includes a second cladding layer, a current spreading layer and a second contact layer. The second electrode includes a narrow-line region on the second contact layer and a pad region electrically connected to the narrow-line region. Band gap energies of the first contact and window layers are larger than that of the light emitting layer. The first contact layer is provided selectively between the window layer and the first electrode and without overlapping the second contact layer as viewed from above.Type: ApplicationFiled: August 29, 2011Publication date: November 1, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yukie Nishikawa, Hironori Yamasaki, Katsuyoshi Furuki, Takashi Kataoka
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Publication number: 20120146072Abstract: According to one embodiment, a semiconductor light emitting element includes a light emitting layer, a current spreading layer of a first conductivity type, and a pad electrode. The light emitting layer is capable of emitting light. The current spreading layer has a first surface and a second surface. The light emitting layer is disposed on a side of the first surface. A light extraction surface having convex structures of triangle cross-sectional shape and a flat surface which is a crystal growth plane are included in the second surface. The pad electrode is provided on the flat surface. One base angle of the convex structure is 90 degrees or more.Type: ApplicationFiled: March 22, 2011Publication date: June 14, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hironori Yamasaki, Katsuyoshi Furuki, Yukie Nishikawa