Abstract: Heating within a plane of a substrate may be uniform while a thermal budget is decreased. A substrate processing apparatus includes a process chamber configured to accommodate a substrate; a substrate mounting unit installed in the process chamber and configured to have the substrate placed thereon; an electromagnetic wave supply unit configured to supply an electromagnetic wave to the substrate placed on the substrate mounting unit; and a choke groove formed on a side surface of the substrate mounting unit.

Abstract: The temperature of a substrate is elevated rapidly while improving the temperature uniformity of the substrate. The substrate is loaded into a process chamber, the loaded substrate is supported on a first substrate support unit, a gas is supplied to the process chamber, the temperature of the substrate supported on the first substrate support unit is elevated in a state of increasing the pressure in the process chamber to higher than the pressure during loading of the substrate or in a state of increasing the pressure in the process chamber to higher than the pressure during processing for the surface of the substrate, the substrate supported on the first substrate support unit is transferred to the second substrate support unit and supported thereon after lapse of a predetermined time, and the surface of substrate is processed while heating the substrate supported on the second substrate support unit.

Abstract: The temperature of a substrate is elevated rapidly while improving the temperature uniformity of the substrate. The substrate is loaded into a process chamber, the loaded substrate is supported on a first substrate support unit, a gas is supplied to the process chamber, the temperature of the substrate supported on the first substrate support unit is elevated in a state of increasing the pressure in the process chamber to higher than the pressure during loading of the substrate or in a state of increasing the pressure in the process chamber to higher than the pressure during processing for the surface of the substrate, the substrate supported on the first substrate support unit is transferred to the second substrate support unit and supported thereon after lapse of a predetermined time, and the surface of substrate is processed while heating the substrate supported on the second substrate support unit.

Abstract: The temperature of a substrate is elevated rapidly while improving the temperature uniformity of the substrate. The substrate is loaded into a process chamber, the loaded substrate is supported on a first substrate support unit, a gas is supplied to the process chamber, the temperature of the substrate supported on the first substrate support unit is elevated in a state of increasing the pressure in the process chamber to higher than the pressure during loading of the substrate or in a state of increasing the pressure in the process chamber to higher than the pressure during processing for the surface of the substrate, the substrate supported on the first substrate support unit is transferred to the second substrate support unit and supported thereon after lapse of a predetermined time, and the surface of substrate is processed while heating the substrate supported on the second substrate support unit.

Abstract: Heating within a plane of a substrate may be uniform while a thermal budget is decreased. A substrate processing apparatus includes a process chamber configured to accommodate a substrate; a substrate mounting unit installed in the process chamber and configured to have the substrate placed thereon; an electromagnetic wave supply unit configured to supply an electromagnetic wave to the substrate placed on the substrate mounting unit; and a choke groove formed on a side surface of the substrate mounting unit.

Abstract: The temperature of a substrate is elevated rapidly while improving the temperature uniformity of the substrate. The substrate is loaded into a process chamber, the loaded substrate is supported on a first substrate support unit, a gas is supplied to the process chamber, the temperature of the substrate supported on the first substrate support unit is elevated in a state of increasing the pressure in the process chamber to higher than the pressure during loading of the substrate or in a state of increasing the pressure in the process chamber to higher than the pressure during processing for the surface of the substrate, the substrate supported on the first substrate support unit is transferred to the second substrate support unit and supported thereon after lapse of a predetermined time, and the surface of substrate is processed while heating the substrate supported on the second substrate support unit.

Abstract: To effectively prevent a micro arc causing damage to an apparatus and a substrate, by detecting a generation of the micro arc. A substrate processing apparatus is constituted so as to generate a plasma P, by applying a high frequency power to an electrode 210 provided in a processing chamber 200 from a high frequency power supply part 100 through a matching unit 300. A directional coupler 121 is provided between a high frequency power source 111 and the matching unit 300, so that a reflected wave reflected from the electrode 210 and a traveling wave advancing toward the electrode 210 are coupled to a detector 122. The detector 122 outputs a detection signal, when a level of a reflected wave Pr and a differential level thereof exceed each set value. In order to place an initial period of discharge out of a detection period, a delay traveling wave, which is a delayed traveling wave, is also outputted.

Abstract: To effectively prevent a micro arc causing damage to an apparatus and a substrate, by detecting a generation of the micro arc. A substrate processing apparatus is constituted so as to generate a plasma P, by applying a high frequency power to an electrode 210 provided in a processing chamber 200 from a high frequency power supply part 100 through a matching unit 300. A directional coupler 121 is provided between a high frequency power source 111 and the matching unit 300, so that a reflected wave reflected from the electrode 210 and a traveling wave advancing toward the electrode 210 are coupled to a detector 122. The detector 122 outputs a detection signal, when a level of a reflected wave Pr and a differential level thereof exceed each set value. In order to place an initial period of discharge out of a detection period, a delay traveling wave, which is a delayed traveling wave, is also outputted.

Abstract: To effectively prevent a micro arc causing damage to an apparatus and a substrate, by detecting a generation of the micro arc. A substrate processing apparatus is constituted so as to generate a plasma P, by applying a high frequency power to an electrode 210 provided in a processing chamber 200 from a high frequency power supply part 100 through a matching unit 300. A directional coupler 121 is provided between a high frequency power source 111 and the matching unit 300, so that a reflected wave reflected from the electrode 210 and a traveling wave advancing toward the electrode 210 are coupled to a detector 122. The detector 122 outputs a detection signal, when a level of a reflected wave Pr and a differential level thereof exceed each set value. In order to place an initial period of discharge out of a detection period, a delay traveling wave, which is a delayed traveling wave, is also outputted.

Abstract: A substrate heating equipment for use in a semiconductor fabricating apparatus includes a heater support frame disposed within a vacuum vessel, opposed panel heaters disposed in a pluri-shelved fashion within the heater support frame, and support means for supporting a substrate to be treated between an adjacent pair of the opposed panel heaters, whereby simultaneous heating of plural substrates to be treated is enabled. By controlling the individual temperature of the panel heaters, it also becomes possible to significantly reduce a tact time and to effect uniform heating of the substrates while the equipment is rendered compact.