Patents by Inventor Katsuyoshi Hamasaki

Katsuyoshi Hamasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabrication method of superconducting quantum interference device constructed from short weak links with ultrafine metallic wires
    Patent number: 5665980
    Abstract: A method of fabricating a superconducting quantum interference device (DC-SQUID) constructed from short weak links with untrafine wires. The method comprises the following steps: successive forming a niobium nitride film and a silicon nitride film on a substrate; oblique etching of the niobium nitride film and said silicon nitride film with respect to the substrate by a reactive ion etching process using a mixture of oxygen and CF.sub.4 gases to form an olique edge; and successive forming a barrier thin film and a counterelectrode of niobium on the said edge. The short weak links wire fabricated by field evaporation technique. The counterelectrode material were field-evaporated and formed the conductive paths in the pinholes in the insulating thin film.
    Type: Grant
    Filed: June 13, 1994
    Date of Patent: September 9, 1997
    Assignee: Shinko Electric Industries Co., Ltd.
    Inventors: Yoshio Onuma, Katsuyoshi Hamasaki
  • Fabrication method of superconducting quantum interference device constructed from short weak links with ultrafine metallic wires
    Patent number: 5462762
    Abstract: A method of fabricating a superconducting quantum interference device (DC-SQUID) constructed from short weak links with untrafine wires. The method comprises the following steps: successive forming a niobium nitride film and a silicon nitride film on a substrate; oblique etching of the niobium nitride film and said silicon nitride film with respect to the substrate by a reactive ion etching process using a mixture of oxygen and CF.sub.4 gases to form an olique edge; and successive forming a barrier thin film and a counterelectrode of niobium on the said edge. The short weak links wire fabricated by field evaporation technique. The counterelectrode material were field-evaporated and formed the conductive paths in the pinholes in the insulating thin film.
    Type: Grant
    Filed: June 13, 1994
    Date of Patent: October 31, 1995
    Assignee: Shinko Electric Industries Co., Ltd.
    Inventors: Yoshio Onuma, Katsuyoshi Hamasaki