Patents by Inventor Katsuyoshi Ina

Katsuyoshi Ina has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6315803
    Abstract: Object: To provide a polishing composition which is capable of polishing a tantalum-containing compound at a high stock removal rate and whereby the copper surface after polishing is scarcely corroded, and to provide a polishing process where dishing can be minimized. Means to accomplish the object: A polishing composition comprising an abrasive, oxalic acid, an ethylenediamine derivative, a benzotriazole derivative and water and not containing an oxidizing agent, and a polishing composition comprising an abrasive, oxalic acid, an ethylenediamine derivative, a benzotriazole derivative, water and hydrogen peroxide.
    Type: Grant
    Filed: December 1, 1999
    Date of Patent: November 13, 2001
    Assignee: Fujimi Incorporated
    Inventors: Katsuyoshi Ina, Tadahiro Kitamura
  • Patent number: 6248144
    Abstract: A process for producing a polishing composition, which comprises preliminarily adjusting water to pH 2-4, adding from 40 to 60 wt % of fumed silica to the water under high shearing force, adding water to lower the viscosity to 2-10000 cps, stirring the mixture under low shearing force for at least 5 minutes, adding water to lower the fumed silica concentration to 10-38 wt %, and adding a basic substance under vigorous stirring to raise the pH to 9-12.
    Type: Grant
    Filed: July 14, 2000
    Date of Patent: June 19, 2001
    Assignee: Fujimi Incorporated
    Inventors: Kazusei Tamai, Katsuyoshi Ina
  • Patent number: 6139763
    Abstract: A polishing composition comprising the following components:(a) an abrasive,(b) an oxidizing agent capable of oxidizing tantalum,(c) a reducing agent capable of reducing tantalum oxide, and(d) water.
    Type: Grant
    Filed: December 1, 1999
    Date of Patent: October 31, 2000
    Assignee: Fujimi Incorporated
    Inventors: Katsuyoshi Ina, Tadahiro Kitamura, Tomohide Kamiya, Satoshi Suzumura
  • Patent number: 6132939
    Abstract: A method for forming a resist pattern comprising the steps of: exposing a chemically amplified resist film by use of a mask having a given pattern; forming a protective film made of a paraffin having a melting point of not higher than 10.degree. C. and a boiling point of not lower than 50.degree. C. on the surface of the chemically amplified resist film before or after exposing the chemically amplified resist film; and forming the given pattern in the chemically amplified resist film by developing.
    Type: Grant
    Filed: August 10, 1998
    Date of Patent: October 17, 2000
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Katsuyoshi Ina
  • Patent number: 6100010
    Abstract: A photoresist includes a three-layer structure of a lower layer, a middle layer and an upper layer, wherein the lower and upper layers are photoresist layers, the lower layer is sensitive to a light having a longer wavelength than a light to which the upper layer is sensitive, and the middle layer is a light-shielding film formed of an organic substance that has a transmittance such that the lower layer is not exposed to lights to which the lower and upper layers are sensitive.
    Type: Grant
    Filed: February 23, 1999
    Date of Patent: August 8, 2000
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Katsuyoshi Ina