Abstract: A carbon dioxide-absorbing material containing lithium titanate, the lithium titanate comprising 70 mol % or more of Li4TiO4 and 30 mol % or less of Li2TiO3. Furthermore, the carbon dioxide-absorbing material is obtained by the method for producing a carbon dioxide-absorbing material described below. That is, the absorbing material is obtained by the production method which produces the same by mixing given raw materials such that the atomic ratio between lithium and titanium is from 3.5 to 5.0, and subjecting the resulting mixture to heat treatment. The method for absorbing carbon dioxide includes a carbon dioxide absorption step. The apparatus for absorbing carbon dioxide is provided with carbon dioxide absorption means that absorbs carbon dioxide in the carbon dioxide-absorbing material.

Abstract: A carbon dioxide-absorbing material that can greatly improve an absorption amount of carbon dioxide up to near the theoretical value, a method for producing the carbon dioxide-absorbing material, a method of absorbing carbon dioxide using the carbon dioxide-absorbing material, and an apparatus for absorbing carbon dioxide are provided. The carbon dioxide-absorbing-material of the present invention contains lithium titanate, the lithium titanate comprising 70 mol % or more of Li4TiO4 and 30 mol % or less of Li2TiO3. Furthermore, the carbon dioxide-absorbing material of the invention is obtained by the method for producing a carbon dioxide-absorbing material of the invention described below. That is, the absorbing material is obtained by the production method of the invention which produces the same by mixing given raw materials such that the atomic ratio between lithium and titanium is from 3.5 to 5.0, and subjecting the resulting mixture to heat treatment.

Abstract: Disclosed is a sintered aluminum nitride composition and a circuit substrate for use in semiconductor device. The sintered aluminum nitride composition comprises: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of alkaline earth elements and group IIIa elements of the periodic table; a second component made of either a simple silicon or a silicon-containig compound; and a third component made of either a simple manganese or a manganese-containing compound. The circuit substrate has an insulating layer which is compoesd of the above-described sintered aluminum nitride composition, and an electrically conductive layer containing an electrically conductive material and the same components as those of the insulating layer.

Abstract: According to this invention, there is disclosed a thermal conductivity substrate which includes an aluminum nitride sintered body and a coating layer formed on the body of aluminum phosphate and having a surface roughness of 1 .mu.m or less, and which has excellent humidity resistance and chemical resistance.

Abstract: Disclosed is a circuit substrate and a semiconductor device to which the circuit substrate is applied. The circuit substrate has an insulating layer and an electrically conductive layer. The insulating layer is composed of a sintered aluminum nitride composition containing: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of group IIa elements and group IIIa elements of the periodic table; a second component given by either a simple boron or a boron compound; and a third component give by either a simple manganese or a manganese compound. The electrically conductive layer contains: a conductive component given by a metal or an electrically conductive compound for exhibiting electric conductivity; aluminum nitride; the first component; the second component; and the third component.

Abstract: A metal oxide resistor for suppressing variations in resistivity in use in an atmosphere at a high temperature or humidity. Such a metal oxide resistor includes a sintered body in which carbon particles having an average grain size of 1 .mu.m or less exist in the grain boundaries of metal oxide particles in an amount of 0.05 to 3 wt %, and electrodes formed on at least two opposing surfaces of the sintered body.

Abstract: Disclosed is an aluminum nitride sintered body which has a high thermal conductivity and a high strength and which can be manufactured through low-temperature, short-time sintering. This aluminum nitride sintered body has an average grain size of aluminum nitride grains of 2 .mu.m or less, a thermal conductivity of 80 W/m.K or more, and a relative density of 98% or more.

Abstract: Disclosed is an aluminum nitride sintered body which has a high thermal conductivity and a high strength and which can be manufactured through low-temperature, short-time sintering. This aluminum nitride sintered body has an average grain size of aluminum nitride grains of 2 .mu.m or less, a thermal conductivity of 80 W/m.K or more, and a relative density of 98% or more.