Patents by Inventor Katsuyoshi Tsuchiya

Katsuyoshi Tsuchiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8445295
    Abstract: An electrical characteristics test for a semiconductor integrated circuit using a Kelvin contact method can be conducted in a pre-process without obstructing the reduction in size of a semiconductor chip or without complicating the circuit design. A probe card in a testing apparatus includes probes for Kelvin contact, the probes for Kelvin contact including a coil probe and a POGO pin probe disposed inside the coil probe, and a probe for two-terminal measurement. Electrode pads formed in each chip area over a wafer are in a relation of A=B<2A, given that the area of one of the electrode pads with which the probe for Kelvin contact comes into contact is B and the area of the other electrode pad with which the probe for two-terminal measurement comes into contact is A.
    Type: Grant
    Filed: July 12, 2010
    Date of Patent: May 21, 2013
    Assignee: Renesas Electronics Corporation
    Inventors: Akio Shibuya, Katsuyoshi Tsuchiya, Akira Imaizumi, Hiroshi Matsumoto, Shoji Tsuchioka
  • Publication number: 20110024911
    Abstract: An electrical characteristics test for a semiconductor integrated circuit using a Kelvin contact method can be conducted in a pre-process without obstructing the reduction in size of a semiconductor chip or without complicating the circuit design. A probe card in a testing apparatus includes probes for Kelvin contact, the probes for Kelvin contact including a coil probe and a POGO pin probe disposed inside the coil probe, and a probe for two-terminal measurement. Electrode pads formed in each chip area over a wafer are in a relation of A=B<2A, given that the area of one of the electrode pads with which the probe for Kelvin contact comes into contact is B and the area of the other electrode pad with which the probe for two-terminal measurement comes into contact is A.
    Type: Application
    Filed: July 12, 2010
    Publication date: February 3, 2011
    Inventors: Akio SHIBUYA, Katsuyoshi Tsuchiya, Akira Imaizumi, Hiroshi Matsumoto, Shoji Tsuchioka
  • Patent number: 6384074
    Abstract: The present invention provides compounds which have, particularly, an inhibitory activity on production of melanin, a cell activating activity and an anti-bacterial activity, are derived from natural sources, and are safe and not harmful. One or more compounds represented by the following general formula are contained: wherein R1 represents —CH2OH, —COOR6 or —COOX, whereupon X is a group capable forming a salt and R6 represents hydrogen or a C1 to C3 lower alkyl group; R2 to R5 each represent hydrogen or a methyl group; and . . . A . . . represents ═C(CH3)—, —C(CH3)═, —C(═CH2)—, —CH(CH3)— or —C(OH)(CH3)—.
    Type: Grant
    Filed: January 22, 2001
    Date of Patent: May 7, 2002
    Assignee: Takasago International Corporation
    Inventors: Eiko Tamai, Katsuyoshi Tsuchiya, Yoichiro Nishizawa, Minoru Hanada, Kazuhiko Tokoro
  • Patent number: 6313214
    Abstract: The present invention provides compounds which have, particularly, an inhibitory activity on production of melanin, a cell activating activity and an anti-bacterial activity, are derived from natural sources, and are safe and not harmful. One or more compounds represented by the following general formula are contained: wherein R1 represents —CH2OH, —COOR6 or —COOX, whereupon X is a group capable forming a salt and R6 represents hydrogen or a C1 to C3 lower alkyl group; R2 to R5 each represent hydrogen or a methyl group; and . . . A . . . represents ═C(CH3)—, —C(CH3)═, —C(═CH2)—, —CH(CH3)— or —C(OH) (CH3)—.
    Type: Grant
    Filed: April 20, 1999
    Date of Patent: November 6, 2001
    Assignee: Takasago International Corporation
    Inventors: Eiko Tamai, Katsuyoshi Tsuchiya, Yoichiro Nishizawa, Minoru Hanada, Kazuhiko Tokoro
  • Patent number: 5824195
    Abstract: A process for distilling a crude acrylic silane solution particularly containing impurities in a commercial scale for separating acrylic silane in the presence of a hindered phenol and/or amine as polymerization inhibitor, the process being improved by using simultaneously a dialkyldithiocarbamic acid copper and/or N-nitrosophenylhydroxylamine salt as synergistic polymerization inhibitor.
    Type: Grant
    Filed: June 26, 1996
    Date of Patent: October 20, 1998
    Assignee: Chisso Corporation
    Inventors: Yoichi Kimae, Katsuyoshi Tsuchiya, Takashi Matsuo, Kiyoto Fukuda
  • Patent number: 5672671
    Abstract: A process is disclosed for producing a diorganopolysiloxane by polymerizing a cyclic siloxane expressed by the following general formula (2) ##STR1## wherein R.sup.3 represents methyl group, ethyl group, or phenyl group, and p is an integer of 3 or 4,by an anion living polymerization using a lithium trialkylsilonolate or an alkyl lithium as a polymerization initiator and then terminating the anion living polymerization with an acid or a chlorosilane derivative, the improvement comprising treating a diorganopolysiloxane which is modified with a silanol at both its terminals and included in the cyclic siloxane as impurities, with an acetylating agent.
    Type: Grant
    Filed: June 21, 1996
    Date of Patent: September 30, 1997
    Assignee: Chisso Corporation
    Inventors: Takaharu Nakano, Katsuyoshi Tsuchiya, Shunji Yoshimatsu, Takeru Fuchigami
  • Patent number: 5011669
    Abstract: A process for producing a rod-form silica from a silicic acid ester according to a sol-gel process, which silica has a rod-form having a high aspect ratio and is advantageously used as a filler for resin sealants for semiconductors, is provided, which process comprises adding 35 to 150 parts by weight of a sol of a silicic acid ester to 100 parts by weight of a hydrophobic medium to form an emulsion, subjecting the emulsion to a temperature rise at two stages, the first temperature rise being by 5.degree. to 30.degree. C. at a rate of 10.degree. to 200.degree. C./min. or less and the second temperature rise being by 3.degree. to 20.degree. C. at a rate of 0.5.degree. to 10.degree. C./min., to form a rod-form silica.
    Type: Grant
    Filed: January 24, 1990
    Date of Patent: April 30, 1991
    Assignee: Chisso Corporation
    Inventors: Katsuyoshi Tsuchiya, Kaneo Noake