Patents by Inventor Katsuyuki Hoshino

Katsuyuki Hoshino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190222733
    Abstract: An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.
    Type: Application
    Filed: March 27, 2019
    Publication date: July 18, 2019
    Inventors: Yosuke Nishide, Yu Maehashi, Masahiro Kobayashi, Katsuyuki Hoshino, Akira Okita, Takeshi Ichikawa
  • Patent number: 9437684
    Abstract: The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.
    Type: Grant
    Filed: July 21, 2014
    Date of Patent: September 6, 2016
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Shoichi Kawashima, Takeshi Kawashima, Yasuhiro Nagatomo, Katsuyuki Hoshino
  • Publication number: 20160099544
    Abstract: A laser apparatus including an active medium, an optical cavity, a wavelength conversion medium, an excitation light source, a first reflector and a second reflector, wherein the active medium and the wavelength conversion medium are arranged between the first reflector and the second reflector, excitation light with a center wavelength ?1 emitted from the excitation light source is caused to enter the wavelength conversion medium through the first reflector, the wavelength conversion medium generates wavelength-converted light with a center wavelength ?2 by entrance of the excitation light, the first reflector and the second reflector reflect the wavelength-converted light, the active medium is photoexcited by at least the wavelength-converted light to emit light, and the laser apparatus causes resonance of the light by the optical cavity to generate laser light with a center wavelength ?3.
    Type: Application
    Filed: September 11, 2015
    Publication date: April 7, 2016
    Inventor: Katsuyuki Hoshino
  • Patent number: 9160138
    Abstract: A light-emitting element array includes light-emitting elements that emit light in a direction perpendicular to a substrate. Each light-emitting element includes the substrate, a first nitride semiconductor layer on the substrate and having a mesa portion, an active layer made of a nitride semiconductor disposed on the surface of the mesa portion of the first semiconductor layer opposite the substrate, a second nitride semiconductor layer on the active layer, and a heat radiation layer disposed so that the surface formed by projecting the heat radiation layer on a plane perpendicular to the optical axis of the light-emitting element does not overlap with the surface formed by projecting the mesa portion on the same plane when viewed in the optical axis direction. When the light-emitting element is projected on a plane perpendicular to the optical axis, the surface has an area in a specific range.
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: October 13, 2015
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Katsuyuki Hoshino, Takeshi Uchida
  • Publication number: 20150146749
    Abstract: A light-emitting element array includes light-emitting elements that emit light in a direction perpendicular to a substrate. Each light-emitting element includes the substrate, a first nitride semiconductor layer on the substrate and having a mesa portion, an active layer made of a nitride semiconductor disposed on the surface of the mesa portion of the first semiconductor layer opposite the substrate, a second nitride semiconductor layer on the active layer, and a heat radiation layer disposed so that the surface formed by projecting the heat radiation layer on a plane perpendicular to the optical axis of the light-emitting element does not overlap with the surface formed by projecting the mesa portion on the same plane when viewed in the optical axis direction. When the light-emitting element is projected on a plane perpendicular to the optical axis, the surface has an area in a specific range.
    Type: Application
    Filed: November 25, 2014
    Publication date: May 28, 2015
    Inventors: Katsuyuki Hoshino, Takeshi Uchida
  • Patent number: 8962356
    Abstract: Provided is a method of manufacturing a photonic crystal, including: a first step of forming, on a surface of a substrate, a protective mask for selective growth, the protective mask having an opening pattern opened therein; a second step of selectively growing a columnar semiconductor from an exposed portion of the surface of the substrate not having the mask formed thereon, laterally overgrowing the semiconductor layer on the mask, and embedding the mask; a third step of forming a photonic crystal in the semiconductor layer so that openings in the opening pattern and the one of pores and grooves which form the photonic crystal are at least partly overlapped each other when seen from a direction perpendicular to the surface of the substrate; a fourth step of removing at least part of the columnar semiconductor; and a fifth step of removing at least part of the mask.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: February 24, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventor: Katsuyuki Hoshino
  • Patent number: 8885683
    Abstract: A process for forming a microstructure of a nitride semiconductor including (1) preparing a semiconductor structure which has a second semiconductor layer formed of a group III nitride semiconductor containing at least Al formed on a principal plane of a first semiconductor layer formed of a group III nitride semiconductor containing no Al, and which has a hole that penetrates through the second semiconductor layer and is formed in the first semiconductor layer; (2) subjecting the semiconductor structure to heat treatment under a gas atmosphere including a nitrogen element after step (1) to form a crystal plane of the group III nitride semiconductor containing no Al, on at least a part of a side wall of the hole; and (3) forming a third semiconductor layer formed of a group III nitride semiconductor on the second semiconductor layer after step (2) to cover the upper part of the hole.
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: November 11, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Katsuyuki Hoshino, Yasuhiro Nagatomo, Shoichi Kawashima, Takeshi Kawashima
  • Publication number: 20140327015
    Abstract: The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.
    Type: Application
    Filed: July 21, 2014
    Publication date: November 6, 2014
    Inventors: Shoichi Kawashima, Takeshi Kawashima, Yasuhiro Nagatomo, Katsuyuki Hoshino
  • Patent number: 8842710
    Abstract: There are provided a process for producing a semiconductor device and a semiconductor device which allow conductivity distribution to be formed without making refractive index distributed even in a material system of a semiconductor difficult to be subjected to ion implantation. The process for producing a semiconductor device includes the steps of forming a semiconductor layer containing a dopant; forming a concave and convex structure on the semiconductor layer by partially removing the semiconductor layer; and forming a conductivity distribution reflecting the concave and convex structure in the semiconductor layer by performing heat treatment on the semiconductor layer in which the concave and convex structure has been formed at a temperature at which a material forming the semiconductor layer causes mass transport and filling up a hole of a concave portion of the concave and convex structure with the material forming the semiconductor layer.
    Type: Grant
    Filed: July 27, 2010
    Date of Patent: September 23, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yasuhiro Nagatomo, Takeshi Kawashima, Katsuyuki Hoshino, Shoichi Kawashima
  • Patent number: 8791025
    Abstract: The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.
    Type: Grant
    Filed: July 27, 2010
    Date of Patent: July 29, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Shoichi Kawashima, Takeshi Kawashima, Yasuhiro Nagatomo, Katsuyuki Hoshino
  • Patent number: 8679650
    Abstract: A laminated structure comprises a first layer comprising a crystal with six-fold symmetry, and a second layer comprising a metal oxynitride crystal formed on the first layer The second layer comprises at least one element selected from the group consisting of In, Ga, Si, Ge and Al, N, O and Zn, as main elements, and has in-plane orientation.
    Type: Grant
    Filed: October 1, 2009
    Date of Patent: March 25, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Naho Itagaki, Tatsuya Iwasaki, Katsuyuki Hoshino
  • Publication number: 20130252360
    Abstract: Provided is a method of manufacturing a photonic crystal, including: a first step of forming, on a surface of a substrate, a protective mask for selective growth, the protective mask having an opening pattern opened therein; a second step of selectively growing a columnar semiconductor from an exposed portion of the surface of the substrate not having the mask formed thereon, laterally overgrowing the semiconductor layer on the mask, and embedding the mask; a third step of forming a photonic crystal in the semiconductor layer so that openings in the opening pattern and the one of pores and grooves which form the photonic crystal are at least partly overlapped each other when seen from a direction perpendicular to the surface of the substrate; a fourth step of removing at least part of the columnar semiconductor; and a fifth step of removing at least part of the mask.
    Type: Application
    Filed: March 12, 2013
    Publication date: September 26, 2013
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Katsuyuki Hoshino
  • Publication number: 20130163628
    Abstract: A process for forming a microstructure of a nitride semiconductor including (1) preparing a semiconductor structure which has a second semiconductor layer formed of a group III nitride semiconductor containing at least Al formed on a principal plane of a first semiconductor layer formed of a group III nitride semiconductor containing no Al, and which has a hole that penetrates through the second semiconductor layer and is formed in the first semiconductor layer; (2) subjecting the semiconductor structure to heat treatment under a gas atmosphere including a nitrogen element after step (1) to form a crystal plane of the group III nitride semiconductor containing no Al, on at least a part of a side wall of the hole; and (3) forming a third semiconductor layer formed of a group III nitride semiconductor on the second semiconductor layer after step (2) to cover the upper part of the hole.
    Type: Application
    Filed: September 7, 2012
    Publication date: June 27, 2013
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Katsuyuki Hoshino, Yasuhiro Nagatomo, Shoichi Kawashima, Takeshi Kawashima
  • Patent number: 8311072
    Abstract: A surface emitting laser array having a plurality of surface emitting lasers arranged in an array, each of the surface emitting lasers being provided with a two-dimensional photonic crystal having a resonance mode in an in-plane direction and with an active layer. The surface emitting laser has a mesa-shaped inclined side wall surface. When a maximum light-receiving angle with respect to the mesa-shaped inclined side wall surface at which an incident light is coupled with a waveguide containing the two-dimensional photonic crystal is denoted as ?max°, an angle formed by a plane of the two-dimensional photonic crystal and the mesa-shaped inclined side wall surface is controlled so as to exceed (90+?max)° or be smaller than (90??max)°.
    Type: Grant
    Filed: May 4, 2010
    Date of Patent: November 13, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Katsuyuki Hoshino, Shoichi Kawashima
  • Patent number: 8129210
    Abstract: A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a configuration having a first step of forming a first GaN semiconductor layer on a substrate, a second step of forming a first hole by using etching on the first GaN semiconductor layer formed in the first narrow, and a third step of performing heat-treatment at a temperature from 850° C. to 950° C. inclusive under a gas atmosphere including nitrogen, in order to form a second narrow in which a diameter of the first hole h formed in the second step is made narrower than the diameter of the first hole in an in-plane direction of the substrate.
    Type: Grant
    Filed: October 28, 2010
    Date of Patent: March 6, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takeshi Kawashima, Katsuyuki Hoshino, Shoichi Kawashima, Yasuhiro Nagatomo
  • Patent number: 8130808
    Abstract: Provided is a two-dimensional photonic crystal surface emitting laser which can suppress light leaking outside in an in-plane direction of the two-dimensional photonic crystal and an absorption loss in an active layer caused by the latter layer serving as an absorbing layer without contributing to light emission, and can improve light use efficiency. The surface emitting laser has a laminated structure in which an active layer and a photonic crystal layer are laminated in a vertical direction, has a resonance mode in an in-plane direction of the photonic crystal, and light is extracted in a vertical direction to a surface of the photonic crystal, wherein the laminated structure has a multi-refractive index layer including a central region made of a high refractive index medium and a peripheral portion made of a low refractive index medium with a lower refractive index than that of the high refractive index medium.
    Type: Grant
    Filed: December 1, 2010
    Date of Patent: March 6, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Katsuyuki Hoshino, Yasuhiro Nagatomo
  • Publication number: 20110237077
    Abstract: The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.
    Type: Application
    Filed: July 27, 2010
    Publication date: September 29, 2011
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Shoichi Kawashima, Takeshi Kawashima, Yasuhiro Nagatomo, Katsuyuki Hoshino
  • Publication number: 20110134941
    Abstract: Provided is a two dimensional photonic crystal surface emitting laser which can suppress light leaking outside in an in-plane direction of the two dimensional photonic crystal and an absorption loss in an active layer caused by serving as an absorbing layer without contributing to light emission, and can improve light use efficiency. The surface emitting laser has a laminated structure in which an active layer and a photonic crystal layer are laminated in a vertical direction, has a resonance mode in an in-plane direction of the photonic crystal, and extracts light in a vertical direction to a surface of the photonic crystal, wherein the laminated structure has a multi-refractive index layer including a central region made of a high refractive index medium and a peripheral portion made of a low refractive index medium with a lower refractive index than that of the high refractive index medium.
    Type: Application
    Filed: December 1, 2010
    Publication date: June 9, 2011
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Katsuyuki Hoshino, Yasuhiro Nagatomo
  • Publication number: 20110039364
    Abstract: A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a configuration having a first step of forming a first GaN semiconductor layer on a substrate, a second step of forming a first hole by using etching on the first GaN semiconductor layer formed in the first narrow, and a third step of performing heat-treatment at a temperature from 850° C. to 950° C. inclusive under a gas atmosphere including nitrogen, in order to form a second narrow in which a diameter of the first hole h formed in the second step is made narrower than the diameter of the first hole in an in-plane direction of the substrate.
    Type: Application
    Filed: October 28, 2010
    Publication date: February 17, 2011
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Takeshi Kawashima, Katsuyuki Hoshino, Shoichi Kawashima, Yasuhiro Nagatomo
  • Publication number: 20100284432
    Abstract: A surface emitting laser array having a plurality of surface emitting lasers arranged in an array, each of the surface emitting lasers being provided with a two-dimensional photonic crystal having a resonance mode in an in-plane direction and with an active layer. The surface emitting laser has a mesa-shaped inclined side wall surface. When a maximum light-receiving angle with respect to the mesa-shaped inclined side wall surface at which an incident light is coupled with a waveguide containing the two-dimensional photonic crystal is denoted as ?max°, an angle formed by a plane of the two-dimensional photonic crystal and the mesa-shaped inclined side wall surface is controlled so as to exceed (90+?max)° or be smaller than (90??max)°.
    Type: Application
    Filed: May 4, 2010
    Publication date: November 11, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Katsuyuki Hoshino, Shoichi Kawashima