Abstract: A method of manufacturing a dielectric device includes epitaxially growing a metal film on a substrate, forming a dielectric film on the metal film such that the dielectric film has a preferentially oriented structure, forming a first electrode film having a non-oriented or amorphous structure on the dielectric film, removing the substrate and the metal film from the dielectric film or removing the substrate from the metal film, and forming a second electrode film having a non-oriented or amorphous structure on the dielectric film or the metal film.

Abstract: An electronic device sheet, comprising a pair of electrodes, a dielectric layer provided between the pair of electrodes, and one or more insulation patch members provided on one of principal surfaces of the dielectric layer, wherein the insulation patch member includes a boundary line having an undulating shape.

Abstract: A dielectric device has a first electrode film having a non-oriented or amorphous structure, a dielectric film provided on the first electrode film and having a preferentially oriented structure, and a second electrode film provided on the dielectric film and having a non-oriented or amorphous structure.

Abstract: A thin film capacitor comprises: a laminated body that has a base electrode, a dielectric layer and an upper electrode layer; a protective layer covering the base electrode, the dielectric layer and the upper electrode layer, and includes a first through-hole that reaches the base electrode, and a second through-hole that reaches the upper electrode layer; a first extraction electrode in the first through-hole and electrically connected with the base electrode; a second extraction electrode in the second through-hole and electrically connected with the upper electrode layer; a first terminal electrode on the protective layer, and connected with the base electrode through the first extraction electrode; and a second terminal electrode on the protective layer, and connected with the upper electrode layer through the second extraction electrode. Young's modulus of the protective layer is equal to or higher than 0.1 GPa and equal to or lower than 2.0 GPa.

Abstract: A thin film capacitor includes a lower electrode layer, an upper electrode layer, and a dielectric substance layer provided between the lower electrode layer and the upper electrode layer. A dielectric patch member formed of a dielectric material is formed on a surface of the dielectric substance layer on an upper electrode layer side, a cross-sectional structure of the dielectric patch member has a taper angle of 1 to 25 degrees in a cross section perpendicular to the dielectric substance layer, the taper angle being an angle formed by (1) a tangential line tangent to an end portion of the dielectric patch member at a position that is 50% of a maximum height of the dielectric patch member and (2) a line being an interface between the dielectric substance layer and the upper electrode layer, and an area of the dielectric patch member is 100 to 900000 ?m2.

Abstract: A thin film capacitor includes a pair of electrode layers, a dielectric layer existing between the pair of electrode layers, and a ceramic layer disposed on a surface opposite to the dielectric layer of at least one of the electrode layers.

Abstract: An electronic device sheet, comprising a pair of electrodes, a dielectric layer provided between the pair of electrodes, and one or more insulation patch members provided on one of principal surfaces of the dielectric layer, wherein the insulation patch member includes a boundary line having an undulating shape.

Abstract: A thin film capacitor including a lower electrode layer, a dielectric layer provided on the lower electrode layer, and an upper electrode layer formed on the dielectric layer, wherein the dielectric layer includes a recessed portion in a portion on the upper face thereof, a cross-sectional structure perpendicular to the dielectric layer of the recessed portion has a cross-sectional taper angle of 1 degree or more and 25 degrees or less, and the distance between the bottom portion center and an outermost portion of the recessed portion is 20 times or more and 150 times or less a thickness of the dielectric layer.

Abstract: A thin film capacitor comprises: a laminated body that has a base electrode, a dielectric layer and an upper electrode layer; a protective layer covering the base electrode, the dielectric layer and the upper electrode layer, and includes a first through-hole that reaches the base electrode, and a second through-hole that reaches the upper electrode layer; a first extraction electrode in the first through-hole and electrically connected with the base electrode; a second extraction electrode in the second through-hole and electrically connected with the upper electrode layer; a first terminal electrode on the protective layer, and connected with the base electrode through the first extraction electrode; and a second terminal electrode on the protective layer, and connected with the upper electrode layer through the second extraction electrode. Young's modulus of the protective layer is equal to or higher than 0.1 GPa and equal to or lower than 2.0 GPa.

Abstract: A thin film piezoelectric element according to the present invention includes a potassium sodium niobate thin film having a structure in which a plurality of crystal grains are present in a film thickness direction; and a pair of electrode films sandwiching the potassium sodium niobate thin film. When the potassium sodium niobate thin film is divided into three regions of the same thickness in the film thickness direction and average crystal grain sizes A1, A2, and A3 of the respective regions are determined, a ratio m/M of the smallest average crystal grain size m among A1, A2, and A3 to the largest average crystal grain size M among A1, A2, and A3 is 10% to 80%. The region having the smallest average crystal grain size m lies next to one of the pair of electrode films.

Abstract: A thin film capacitor comprising a lower electrode layer, an upper electrode layer, and a dielectric substance layer provided between the lower electrode layer and the upper electrode layer, wherein a dielectric patch member formed of a dielectric material is formed on a surface of the dielectric substance layer on an upper electrode layer side, a cross-sectional structure of the dielectric patch member has a taper angle of 1 to 25 degrees in a cross section perpendicular to the dielectric substance layer, the taper angle being an angle formed by (1) a tangential line tangent to an end portion of the dielectric patch member at a position that is 50% of a maximum height of the dielectric patch member and (2) a line being an interface between the dielectric substance layer and the upper electrode layer, and an area of the dielectric patch member is 100 to 900000 ?m2.

Abstract: There are provided a thin-film piezoelectric element including a piezoelectric thin film which has an alkali niobate-based perovskite structure represented by the composition formula (K1-w-xNawSrx)m(Nb1-yZry)O3 and which is preferentially oriented to (001), and a pair of electrode films that sandwich the piezoelectric thin film, a thin-film piezoelectric actuator, and a thin-film piezoelectric sensor each including the thin-film piezoelectric element.

Abstract: A thin film capacitor includes a pair of electrode layers, a dielectric layer existing between the pair of electrode layers, and a ceramic layer disposed on a surface opposite to the dielectric layer of at least one of the electrode layers.

Abstract: A thin film capacitor including a lower electrode layer, a dielectric layer provided on the lower electrode layer, and an upper electrode layer formed on the dielectric layer, wherein the dielectric layer includes a recessed portion in a portion on the upper face thereof, a cross-sectional structure perpendicular to the dielectric layer of the recessed portion has a cross-sectional taper angle of 1 degree or more and 25 degrees or less, and the distance between the bottom portion center and an outermost portion of the recessed portion is 20 times or more and 150 times or less a thickness of the dielectric layer.

Abstract: An object is to reduce the leakage current of a piezoelectric element including a potassium-sodium niobate thin film, enhance the reliability of the piezoelectric element and, in addition, enhance the withstand voltage by including a pair of electrodes and a piezoelectric layer sandwiched between the above-described pair of electrode layers, wherein the above-described piezoelectric layer is provided with at least one layer each of first piezoelectric layer which is a potassium-sodium niobate thin film substantially not containing Mn (manganese) and second piezoelectric layer which is a potassium-sodium niobate thin film containing Mn.

Abstract: A piezoelectric device according to the present invention is provided with a pair of electrode films, a piezoelectric film sandwiched in between the pair of electrode films, and a stress control film which is in direct contact with a surface of at least one of the pair of electrode films, on the side where the electrode film is not in contact with the piezoelectric film, and which has a linear expansion coefficient larger than those of the relevant electrode film and the piezoelectric film.

Abstract: A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO3, in which Sr (strontium) is substituted on both of an A site and a B site and Mn (manganese) is substituted only on the A site. Accordingly, the piezoelectric element is provided to decrease a leak current of the piezoelectric element using the thin film of potassium sodium niobate, to increase a withstand voltage thereof and to improve piezoelectric characteristics thereof.

Abstract: A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO3, in which Ta (tantalum) is substituted on both of an A site and a B site. Accordingly, the piezoelectric element is provided to increase a reliability of the piezoelectric element using the thin film of potassium sodium niobate and to improve piezoelectric characteristics thereof.

Abstract: A thin film piezoelectric device according to the present invention includes a pair of electrode layers and a piezoelectric thin film interposed between the pair of electrode layers, wherein the piezoelectric thin film contains a rare gas element and has a content gradient of the rare gas element in the thickness direction of the piezoelectric thin film.

Abstract: A piezoelectric device according to the present invention is provided with a first electrode film, a first nonmetal electroconductive intermediate film provided on the first electrode film, a piezoelectric film provided on the first nonmetal electroconductive intermediate film, a second nonmetal electroconductive intermediate film provided on the piezoelectric film, and a second electrode film provided on the second nonmetal electroconductive intermediate film. A linear expansion coefficient of the first nonmetal electroconductive intermediate film is larger than those of the first electrode film and the piezoelectric film, and a linear expansion coefficient of the second nonmetal electroconductive intermediate film is larger than those of the second electrode film and the piezoelectric film.